Abstract: A condensed heterocyclic compound has a sepiapterin reductase inhibitory action and is particularly useful for treatment of a pain. The condensed heterocyclic compound represented by Formula (I) below (R1 represents a hydrocarbon group or the like; R2 and R3 represent a hydrogen atom or the like; R4, X, and Y represent defined substituents), a tautomer or a pharmaceutically acceptable salt of the compound, or a solvate of any of these.

Abstract: An infrared sensor includes an infrared sensor pixel in which a contact hole is formed to electrically connect a metal wiring layer and a support leg metal wiring layer that is located inside a support leg. The metal wiring layer is electrically connected to a signal reading circuit. The contact hole is formed by etching an insulating layer that is formed by deposition so as to cover the metal wiring layer, and has a bottom portion and a side wall portion that are each shaped into a forward tapered shape.

Abstract: An infrared sensor includes an infrared sensor pixel in which a contact hole is formed to electrically connect a metal wiring layer and a support leg metal wiring layer that is located inside a support leg. The metal wiring layer is electrically connected to a signal reading circuit. The contact hole is formed by etching an insulating layer that is formed by deposition so as to cover the metal wiring layer, and has a bottom. portion and a side wall portion that are each shaped into a forward tapered shape.

Abstract: A portable telephone and electronic device are provided. The portable telephone includes a casing having a first surface: a finger guide section that is provided in the first surface and guides a finger of a user to allow the finger to be placed so that a side portion of the finger faces the first surface; an illuminating section provided in the first surface so as to be adjacent to the finger guide section, the illuminating section being capable of radiating light of a predetermined wavelength that transmits through the placed finger; an imaging section provided in the casing so as to be spaced at a predetermined distance from the first surface with respect to a perpendicular direction, the imaging section being capable of imaging the light that has transmitted through the finger; and a control section that performs authentication of the user on the basis of an image obtained by the imaging.

Abstract: A portable telephone and electronic device are provided. The portable telephone includes a casing having a first surface: a finger guide section that is provided in the first surface and guides a finger of a user to allow the finger to be placed so that a side portion of the finger faces the first surface; an illuminating section provided in the first surface so as to be adjacent to the finger guide section, the illuminating section being capable of radiating light of a predetermined wavelength that transmits through the placed finger; an imaging section provided in the casing so as to be spaced at a predetermined distance from the first surface with respect to a perpendicular direction, the imaging section being capable of imaging the light that has transmitted through the finger; and a control section that performs authentication of the user on the basis of an image obtained by the imaging.

Abstract: There is provided a cable for data transmission which can be wired and constructed without damaging a surface of a wall, ceiling, floor or the like, without using any clamps and which does not degrade appearance of a wired space, and further, allows the wiring construction of the cable provided with a plurality of core wires in a state of less crosstalk. A cable (1) for data transmission includes a core wire (2) having a medium that transmits data and a coating member (4) having adhesiveness and coating at least part of the core wire (2). In this way, because of the adhesiveness of the coating member (4), it is easy to stick the cable onto a wall (6) or the like. Moreover, since a wiring construction of the cable on a surface of the wall (6) or the like without using a clamp, screw or nail is made possible, only the cable is exposed on the surface of the wall (6) or the like and the appearance thereof is improved.

Abstract: There is provided a cable for data transmission which can be wired and constructed without damaging a surface of a wall, ceiling, floor or the like, without using any clamps and which does not degrade appearance of a wired space, and further, allows the wiring construction of the cable provided with a plurality of core wires in a state of less crosstalk. A cable (1) for data transmission includes a core wire (2) having a medium that transmits data and a coating member (4) having adhesiveness and coating at least part of the core wire (2). In this way, because of the adhesiveness of the coating member (4), it is easy to stick the cable onto a wall (6) or the like. Moreover, since a wiring construction of the cable on a surface of the wall (6) or the like without using a clamp, screw or nail is made possible, only the cable is exposed on the surface of the wall (6) or the like and the appearance thereof is improved.

Abstract: A high-frequency current detector of a plasma processing apparatus detects a high-frequency current produced when high-frequency power in the range that does not cause generation of plasma in a chamber is supplied from a high-frequency power supply source to the chamber. The high-frequency current detector outputs the detected high-frequency current to a computer. The computer compares the high-frequency current received from the high-frequency current detector with a reference high-frequency current. When the received high-frequency current matches the reference high-frequency current, the computer determines that the process performance is normal. Otherwise, the computer determines that the process performance is abnormal. In this way, high-frequency characteristics specific to the apparatus are detected and the process performance are evaluated based on the detected high-frequency characteristics.

Abstract: In a wafer treatment apparatus, a hydrofluoric acid gas supply pipe and an evacuation pipe are connected to a chamber storing a wafer for performing prescribed treatment. A control part is provided for controlling supply of hydrofluoric acid gas. The control part sets a time for supplying the hydrofluoric acid gas into the chamber to be longer than a time up to starting of etching of a reaction product and shorter than a time up to starting of etching of a gate insulator film. Thus, only the reaction product can be substantially etched without etching the gate insulator film.

Abstract: A plurality of interconnection layers arranged at the same level are connected by an anti-diffusion insulating layer in a lateral direction. Interconnection layers arranged at different levels are electrically connected through a plug portion in a vertical direction. A second interlayer film is arranged only at a region directly below the interconnection layer and connects the interconnection layer with the anti-diffusion insulating layer in the vertical direction. A hollow space or an interlayer film with a low dielectric constant of at most 2.5 is located laterally adjacent to each of the plurality of interconnection layers. Thus, a semiconductor device having a multilayer interconnection structure that can improve both the strength of the interconnection layers and the transmission speed of signals, and a method of manufacturing the semiconductor device can be obtained.

Abstract: A method of etching a semiconductor device preventing tapering of a gate electrode edge includes a main etching of an electrode or wiring material supported by a dielectric film at a semiconductor substrate surface to expose the dielectric film. After the main etching step, residues of the electrode or the wiring material by sequentially etching utilizing a first gas mixture including a halogen-containing gas and an additive gas suppressing etching of the dielectric film by the halogen-containing gas, and in a second gas mixture gas including the halogen-containing gas and the additive gas and having the additive gas amount in a larger concentration than the first gas mixture.

Abstract: A high-frequency current detector of a plasma processing apparatus detects a high-frequency current produced when high-frequency power in the range that does not cause generation of plasma in a chamber is supplied from a high-frequency power supply source to the chamber. The high-frequency current detector outputs the detected high-frequency current to a computer. The computer compares the high-frequency current received from the high-frequency current detector with a reference high-frequency current. When the received high-frequency current matches the reference high-frequency current, the computer determines that the process performance is normal. Otherwise, the computer determines that the process performance is abnormal. In this way, high-frequency characteristics specific to the apparatus are detected and the process performance are evaluated based on the detected high-frequency characteristics.

Abstract: Disclosed is a manufacturing method of a semiconductor device which is intended to prevent occurrence of tapering of the shape of a gate electrode edge portion as has been deemed to be a problem at high-selectivity overetching process steps using a gas of HBr/O2 based gas.

Abstract: A plasma processing apparatus includes a reaction chamber for processing a workpiece with plasma which is generated by using one or more gases, a gas supplying means which pulsatively supplies the gases to the reaction chamber, and an exhaust means for exhausting the reaction chamber, wherein a gas supplying direction by said gas supplying means is arranged to correspond with an exhausting direction by said exhausting means.

Abstract: The characteristic test device 1 supplies the output from the photo detector of the optical pickup 2, as signals A to F, directly to the sample hold circuits 8a-8f. The sample hold circuits 8a-8f, the multiplexer 9, and the second analog/digital converting circuit 10 convert the signals A to F into digital data with the sampling frequency of 50 KHz or more. In the computer 12, the processing division 12d reads out the indicated program from the data storage division 12b, where the program P for measuring the level of RF signal, is stored. The processing division 12d performs the operation of the indicated measurement items, based on the digital data stored in the second memory 11, then measures the characteristic of the optical pickup 2.

Abstract: In a wafer treatment apparatus, a hydrofluoric acid gas supply pipe and an evacuation pipe are connected to a chamber storing a wafer for performing prescribed treatment. A control part is provided for controlling supply of hydrofluoric acid gas. The control part sets a time for supplying the hydrofluoric acid gas into the chamber to be longer than a time up to starting of etching of a reaction product and shorter than a time up to starting of etching of a gate insulator film. Thus, only the reaction product can be substantially etched without etching the gate insulator film.

Abstract: A jitter measurement device for reproducing a signal from an optical disc, which has simple circuit configuration and can effectively measure the jitter component. A matrix circuit 4 supplies the RF signals to the analog/digital converting circuit 6. Second, the computer 8 computes the slice level from the digitized data of the RF signals. Computer 8 computes the time point at which the RF signals become the indicated slice level, by interpolating, based on the digital data at the sampling point in the neighborhood of the said slice level, and the sampling frequency of the analog/digital converting circuit 6. A computer 8 computes each time breadth between the time points at which the RF signals become the slice level, then computes the jitter component of the reproduced signal, based on the each time breadth.

Abstract: A device for measuring focusing characteristics of an optical pickup and/or an optical disc capable of measuring characteristics of focusing states with high accuracy by a simplified circuit. An arithmetic-logic unit 12d controls an offset supplying circuit 23 for applying an offset voltage to a focusing servo control signal. This arithmetic-logic unit 12d detects an error rate of the playback data in such a state in which the focusing position of the laser light is deviated by a pre-set offset amount. The arithmetic-logic unit 12d sequentially varies the offset voltage to repeat the above processing for detecting the error rate. The arithmetic-logic unit 12d approximates the relationship of the error rate to the offset amount by a quadratic curve based on detected data. The offset amount which minimizes the error rate is found from this equation of approximation.

Abstract: A device for measuring characteristics of an optical pickup and/or an optical disc by which characteristics of tracking signals can be measured accurately in a noise-free manner. The measurement device 1 has a sample-and-hold circuit 8 and an analog-to-digital converter 10 for directly sampling an output of an optical pickup 2 as signals A to F in order to store the resulting digital data in a second memory 11. An arithmetic-logic unit 12d measures tracking error signals based on the digital data stored in the second memory 11. The arithmetic-logic unit 12d eliminates unstable portions of the tracking signals generated responsive to rotational eccentricity of the optical disc to find data.

Abstract: A plasma processing apparatus has a plurality of annular permanent magnets arranged concentrically of a polarity identical in the circumferential direction at the atmosphere side of a second electrode arranged opposite to a stage on which an object to be processed is placed. Arrangement is provided so that the polarity of magnets located adjacent radially is opposite. An insulation substrate is provided between a partition panel and a processing chamber to electrically insulate a plasma generation chamber. Direct current voltage is applied in a pulsive manner to the plasma generation chamber. Thus, a plasma processing apparatus can be provided that allows formation of plasma uniformly over a large area, and processing of a specimen of a large diameter uniformly.