Patents by Inventor Kenji Shiojima

Kenji Shiojima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220045177
    Abstract: There is provided an epitaxial substrate, including: a GaN substrate whose main surface is a c-plane; and a GaN layer epitaxially grown on the main surface, wherein the main surface includes a region where an off-angle is 0.4° or more, and an E3 trap concentration in the GaN layer grown on the region is 3.0×1013 cm?3 or less.
    Type: Application
    Filed: August 20, 2019
    Publication date: February 10, 2022
    Applicants: SCIOCS COMPANY LIMITED, SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Fumimasa HORIKIRI, Yoshinobu NARITA, Kenji SHIOJIMA
  • Patent number: 6063935
    Abstract: An azetidine derivative is provided which includes 3,3-dihydroxyazetidine represented by Chemical Formula (I) or a salt thereof: ##STR1## A composition containing the azetidine derivative, and a process for producing the azetidine derivative are also provided. The azetidine derivative is a novel compound, and is useful for promoting bifidobacterium divisional multiplication.
    Type: Grant
    Filed: February 9, 1999
    Date of Patent: May 16, 2000
    Assignee: Toa Pharmaceutical Co., Ltd.
    Inventors: Takashi Masuda, Taketoshi Arai, Kenji Shiojima, Masanori Sasatsu, Kazuo Masuda, Hajime Hamashima, Genichiro Seo
  • Patent number: 5406098
    Abstract: A semiconductor circuit device is disclosed in which an impurity ion implanted region is formed in a substrate, a Schottky junction type gate electrode is formed above the impurity ion implanted region, and a source electrode and a drain electrode are formed on both sides of the gate electrode. In this device, an InGaP barrier layer is formed between the substrate and the electrodes, a cap layer comprising a semiconductor free from In as a constituent is formed between the InGaP barrier layer and the electrodes, and the gate electrode is formed of a refractory metal.
    Type: Grant
    Filed: August 3, 1994
    Date of Patent: April 11, 1995
    Assignee: Nippon Telegraph & Telephone Corporation
    Inventors: Fumiaki Hyuga, Kenji Shiojima, Tatsuo Aoki, Kazuyoshi Asai, Masami Tokumitsu, Kazumi Nishimura, Yasuro Yamane
  • Patent number: 5369043
    Abstract: A semiconductor circuit device is disclosed in which an impurity ion implanted region is formed in a substrate, a Schottky junction type gate electrode is formed above the impurity ion implanted region, and a source electrode and a drain electrode are formed on both sides of the gate electrode. In this device, an InGaP barrier layer is formed between the substrate and the electrodes, a cap layer comprising a semiconductor free from In as a constituent is formed between the InGaP barrier layer and the electrodes, and the gate electrode is formed of a refractory metal.
    Type: Grant
    Filed: December 22, 1993
    Date of Patent: November 29, 1994
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Fumiaki Hyuga, Kenji Shiojima, Tatsuo Aoki, Kazuyoshi Asai, Masami Tokumitsu, Kazumi Nishimura, Yasuro Yamane
  • Patent number: 4957196
    Abstract: A coin-operated locker which is impossible to be opened when the locker is unused and which is openable by means of its door and becomes usable when a coin or coins of a predetermined amount are deposited, includes a sensor for detecting the deposit of a coin or coins, a detector for detecting the locking and the unlocking of a cylinder lock, a plunger engageable with or removable from an engaging opening of the door, and a controller for retracting the plunger from the door in response to a coin deposit signal from the sensor and for engaging the plunger with the door after a predetermined time in response to an unlock signal from the detector.
    Type: Grant
    Filed: December 19, 1988
    Date of Patent: September 18, 1990
    Assignee: Kokusan Kinzoku Kogyo Kabushiki Kaisha
    Inventors: Kenji Shiojima, Yuji Kasai