Abstract: Related semiconductor devices have a problem in which analysis processing with high defect reproducibility cannot be performed. According to an embodiment, a semiconductor device includes a first arithmetic core that executes a first program stored in a first code area using a first local memory area and a second arithmetic core that executes a second program stored in a second code area using a second local memory area. In an analysis mode, the semiconductor device performs first analysis processing that causes both the first arithmetic core and the second arithmetic core to execute the first program and second analysis processing that causes both the first arithmetic core and the second arithmetic core to execute the second program, and compares a plurality of arithmetic result data pieces acquired from the first and second analysis processing to thereby acquire analysis information used for defect analysis.

Abstract: According to one embodiment, a semiconductor device performs processing based on a user program by using a user program, which is used in a normal mode, as an analysis program and making a plurality of peripheral circuits having the same function operate in lock-step where the plurality of peripheral circuits operate in the identical manner, and makes failure diagnosis of the peripheral circuits by determining match or mismatch of a plurality of analysis information respectively obtained from the plurality of peripheral circuits operating in lock-step.

Abstract: According to one embodiment, a semiconductor device performs processing based on a user program by using a user program, which is used in a normal mode, as an analysis program and making a plurality of peripheral circuits having the same function operate in lock-step where the plurality of peripheral circuits operate in the identical manner, and makes failure diagnosis of the peripheral circuits by determining match or mismatch of a plurality of analysis information respectively obtained from the plurality of peripheral circuits operating in lock-step.

Abstract: Related semiconductor devices have a problem in which analysis processing with high defect reproducibility cannot be performed. According to an embodiment, a semiconductor device includes a first arithmetic core that executes a first program stored in a first code area using a first local memory area and a second arithmetic core that executes a second program stored in a second code area using a second local memory area. In an analysis mode, the semiconductor device performs first analysis processing that causes both the first arithmetic core and the second arithmetic core to execute the first program and second analysis processing that causes both the first arithmetic core and the second arithmetic core to execute the second program, and compares a plurality of arithmetic result data pieces acquired from the first and second analysis processing to thereby acquire analysis information used for defect analysis.

Abstract: A semiconductor device includes a bus, first and second bus drivers that drive the bus, and a control circuit that controls the first and second bus drivers. The control circuit controls the first and second bus drivers in such a way that the first and second bus drivers supply logic signals different from each other to the bus.

Abstract: An operational margin of a memory of a semiconductor integrated circuit device including an SRAM is improved. In order to set the Vth of driving MISFETs Qd, transfer MISFETs Qt and MISFETs for load resistance QL forming memory cells of an SRAM, relatively and intentionally higher than the Vth of predetermined MISFETs of SRAM peripheral circuits and logic circuits such as microprocessor, an impurity introduction step is introduced to set the Vth of the driving MISFETs Qd, transfer MISFETs Qt and MISFETs for load resistance, separately from an impurity introduction step for setting the Vth of the predetermined MISFETs.

Abstract: An operational margin of a memory of a semiconductor integrated circuit device including an SRAM is improved. In order to set the Vth of driving MISFETs Qd, transfer MISFETs Qt and MISFETs for load resistance QL forming memory cells of an SRAM, relatively and intentionally higher than the Vth of predetermined MISFETs of SRAM peripheral circuits and logic circuits such as microprocessor, an impurity introduction step is introduced to set the Vth of the driving MISFETs Qd, transfer MISFETs Qt and MISFETs for load resistance, separately from an impurity introduction step for setting the Vth of the predetermined MISFETs.

Abstract: An operational margin of a memory of a semiconductor integrated circuit device including an SRAM is improved. In order to set the Vth of driving MISFETs Qd, transfer MISFETs Qt and MISFETs for load resistance QL forming memory cells of an SRAM, relatively and intentionally higher than the Vth of predetermined MISFETs of SRAM peripheral circuits and logic circuits such as microprocessor, an impurity introduction step is introduced to set the Vth of the driving MISFETs Qd, transfer MISFETs Qt and MISFETs for load resistance, separately from an impurity introduction step for setting the Vth of the predetermined MISFETs.

Abstract: An operational margin of a memory of a semiconductor integrated circuit device including an SRAM is improved. In order to set the Vth of driving MISFETs Qd, transfer MISFETs Qt and MISFETs for load resistance QL forming memory cells of an SRAM, relatively and intentionally higher than the Vth of predetermined MISFETs of SRAM peripheral circuits and logic circuits such as microprocessor, an impurity introduction step is introduced to set the Vth of the driving MISFETs Qd, transfer MISFETs Qt and MISFETs for load resistance, separately from an impurity introduction step for setting the Vth of the predetermined MISFETs.

Abstract: An operational margin of a memory of a semiconductor integrated circuit device including an SRAM is improved. In order to set the Vth of driving MISFETs Qd, transfer MISFETs Qt and MISFETs for load resistance QL forming memory cells of an SRAM, relatively and intentionally higher than the Vth of predetermined MISFETS of SRAM peripheral circuits and logic circuits such as microprocessor, an impurity introduction step is introduced to set the Vth of the driving MISFETs Qd, transfer MISFETs Qt and MISFETs for load resistance, separately from an impurity introduction step for setting the Vth of the predetermined MISFETS.

Abstract: An operational margin of a memory of a semiconductor integrated circuit device including an SRAM is improved. In order to set the Vth of driving MISFETs Qd, transfer MISFETs Qt and MISFETs for load resistance QL forming memory cells of an SRAM, relatively and intentionally higher than the Vth of predetermined MISFETs of SRAM peripheral circuits and logic circuits, such as a microprocessor, an impurity introduction step is introduced to set the Vth of the driving MISFETs Qd, transfer MISFETs Qt and MISFETs for load resistance, separately from an impurity introduction step for setting the Vth of the predetermined MISFETs.