Abstract: A manufacturing method of sample table is provided. The sample table holds a semiconductor wafer on which a plasma process is to be performed, and the manufacturing method includes: preparing an adsorption plate that has a contact surface on which a lapping process has been performed and surface-contacting the semiconductor wafer, and that adsorbs the semiconductor wafer; and preparing a supporting substrate which has a recess surface to which a noncontact surface of the adsorption plate is adhered, wherein a difference between a depth of an approximate center portion of the recess surface and a depth of a distant portion spaced apart from the approximate center portion is larger than a difference between a thickness of the adsorption plate at a portion contacting the approximate center portion and a thickness of the adsorption plate at a portion contacting the distant portion.

Abstract: A manufacturing method of sample table is provided. The sample table holds a semiconductor wafer on which a plasma process is to be performed, and the manufacturing method includes: preparing an adsorption plate that has a contact surface on which a lapping process has been performed and surface-contacting the semiconductor wafer, and that adsorbs the semiconductor wafer; and preparing a supporting substrate which has a recess surface to which a noncontact surface of the adsorption plate is adhered, wherein a difference between a depth of an approximate center portion of the recess surface and a depth of a distant portion spaced apart from the approximate center portion is larger than a difference between a thickness of the adsorption plate at a portion contacting the approximate center portion and a thickness of the adsorption plate at a portion contacting the distant portion.

Abstract: In a plasma processing apparatus of an exemplary embodiment, energy of microwaves is introduced from an antenna into the processing container through a dielectric window. The plasma processing apparatus includes a central introducing unit and a peripheral introducing unit. A central introduction port of the central introducing unit injects a gas just below the dielectric window. A plurality of peripheral introduction ports of the peripheral introducing unit injects a gas towards a periphery of the placement region. The central introducing unit is connected to with a plurality of first gas sources including a reactive gas source and a rare gas source through a plurality of first flow rate control units. The peripheral introducing unit is connected to with a plurality of second gas sources including a reactive gas source and a rare gas source through a plurality of second flow rate control units.

Abstract: In a plasma processing apparatus of an exemplary embodiment, energy of microwaves is introduced from an antenna into the processing container through a dielectric window. The plasma processing apparatus includes a central introducing unit and a peripheral introducing unit. A central introduction port of the central introducing unit injects a gas just below the dielectric window. A plurality of peripheral introduction ports of the peripheral introducing unit injects a gas towards a periphery of the placement region. The central introducing unit is connected to with a plurality of first gas sources including a reactive gas source and a rare gas source through a plurality of first flow rate control units. The peripheral introducing unit is connected to with a plurality of second gas sources including a reactive gas source and a rare gas source through a plurality of second flow rate control units.

Abstract: There is provided a plasma processing apparatus capable of performing a plasma process while surely supplying a gas. The plasma processing apparatus includes an outer gas supply member having gas supply openings for supplying a plasma processing gas and a jacket configured to support the outer gas supply member within a processing chamber and serving as a gas supply member supporting device. The jacket includes three supporting members installed so as to connect the outer gas supply member and a sidewall and arranged at a certain distance in a direction in which the outer gas supply member extends and mounts fixed to the sidewall so as to mount the supporting members therein. The supporting members include a first supporting member fixed to a first mount and a second supporting member movably supported in a second mount.

Abstract: A sample table which stably holds a semiconductor wafer by maintaining smoothness of a contact surface via a lapping process and forming the contact surface to have an approximate recess shape, and a microwave plasma processing apparatus including the sample table.

Abstract: There is provided a plasma processing apparatus capable of performing a plasma process while surely supplying a gas. The plasma processing apparatus includes an outer gas supply member having gas supply openings for supplying a plasma processing gas and a jacket configured to support the outer gas supply member within a processing chamber and serving as a gas supply member supporting device. The jacket includes three supporting members installed so as to connect the outer gas supply member and a sidewall and arranged at a certain distance in a direction in which the outer gas supply member extends and mounts fixed to the sidewall so as to mount the supporting members therein. The supporting members include a first supporting member fixed to a first mount and a second supporting member movably supported in a second mount.

Abstract: A gas supply member includes an annular portion in which a passage for a gas extending to have an annular shape is provided. The annular portion includes a first member having an annular shape and including a flat plate portion in which a plurality of gas supply holes through which a gas is supplied are formed, and a second member having an annular shape and forming a space, which becomes the passage for the gas, between the first member and the second member.

Abstract: An evaporating apparatus includes: a plurality of vapor deposition sources for respectively vaporizing different film forming materials accommodated therein; a plurality of blowing devices for blowing off film forming materials vaporized from the vapor deposition sources through blowing openings; and one or more partition walls for separating the adjacent blowing devices. The one or more partition walls are installed such that relationships of a gap G between each partition wall and the substrate, a height T from each blowing opening to a top surface of each partition wall, a thickness D of each partition wall and a distance E from a center position of each vapor deposition source to a center position of each partition wall satisfy an inequality of E<(G+T)×D/2G. Further, an internal pressure of the processing chamber is controlled to be about 0.01 Pa or less.

Abstract: An evaporating apparatus includes a first processing chamber and a second processing chamber, and a blowing device accommodated in the first processing chamber and a vapor deposition source accommodated in the second processing chamber are connected with each other via a connection pipe. An exhaust mechanism for evacuating the inside of the first processing chamber to a preset vacuum level is connected with the first processing chamber. Organic molecules vaporized from the vapor deposition source are blown out from the blowing device via the connection pipe and is adhered on a substrate, whereby a thin film is formed on the substrate. By installing the first processing chamber and the second processing chamber separately, the first processing chamber is not opened to the atmosphere when a film forming material is replenished, so that exhaust efficiency can be improved.