Abstract: A substrate having a copper wiring is prepared. An insulating film is formed on the copper wiring. The insulating film is etched with a gas containing fluorine to form an opening reaching the copper wiring. A plasma treatment is carried out on a surface of copper exposed at a bottom of the opening without turning plasma discharge of f after forming the opening in the same chamber as the formation of the opening.

Abstract: A substrate having a copper wiring is prepared. An insulating film is formed on the copper wiring. The insulating film is etched with a gas containing fluorine to form an opening reaching the copper wiring. A plasma treatment is carried out on a surface of copper exposed at a bottom of the opening without turning plasma discharge off after forming the opening in the same chamber as the formation of the opening.

Abstract: A substrate having a copper wiring is prepared. An insulating film is formed on the copper wiring. The insulating film is etched with a gas containing fluorine to form an opening reaching the copper wiring. A plasma treatment is carried out on a surface of copper exposed at a bottom of the opening without turning plasma discharge off after forming the opening in the same chamber as the formation of the opening.

Abstract: A substrate having a copper wiring is prepared. An insulating film is formed on the copper wiring. The insulating film is etched with a gas containing fluorine to form an opening reaching the copper wiring. A plasma treatment is carried out on a surface of copper exposed at a bottom of the opening without turning plasma discharge off after forming the opening in the same chamber as the formation of the opening.

Abstract: A semiconductor device includes a silicon substrate having a main surface, a memory cell formed on the main surface, and an interlayer insulating film formed on the main surface to cover the memory cell. The interlayer insulating film has a top surface and a peripheral edge. In the interlayer insulating film, grooves are formed to be placed between the memory cell and the peripheral edge, to extend in parallel with the main surface and to extend in a predetermined direction at a spacing with each other, and a groove is formed to diverge from the grooves and to extend in a direction different from the extending direction of the grooves. The semiconductor device further includes metal film filling the grooves. Thus, crack propagation from the peripheral edge to the inside of the interlayer insulating film can surely be prevented to provide a semiconductor device with high reliability.

Abstract: A substrate having a copper wiring is prepared. An insulating film is formed on the copper wiring. The insulating film is etched with a gas containing fluorine to form an opening reaching the copper wiring. A plasma treatment is carried out on a surface of copper exposed at a bottom of the opening without turning plasma discharge off after forming the opening in the same chamber as the formation of the opening.

Abstract: A silicon oxide film is formed to cover a polysilicon plug. A bowing shaped hole is formed. A barrier metal and a metal film are formed, which are successively subjected to prescribed anisotropic etching. Here, because of the RIE-lag effect, the etch rate of the barrier metal becomes smaller in the portion between the side surface of the hole and the metal film than in the other portions, preventing the exposure of the surface of the polysilicon plug. Thus, a semiconductor device ensuring a good electrical connection of metal interconnections is obtained.

Abstract: There is described formation of a contact hole without involvement of damage to an etching stopper film and deterioration of electric characteristics, achieved by means of a self-alignment method. An interlayer oxide film is etched through an opening of a resist mask, and by means of plasma etching through use of a processing gas comprising a mixture of a rare gas and a CF-based gas, thereby tapering a shoulder of the silicon nitride film. Alternatively, a silicon oxide film and a silicon nitride film are continually etched through an opening of the resist mask, by means of plasma etching through use of a CH2F2 gas added to a mixed gas including a rare gas and a C4F8 gas.