Patents by Inventor Kenji Tago
Kenji Tago has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120247511Abstract: A method for cleaning a thin film forming apparatus by removing extraneous matter attached to an interior of the thin film forming apparatus after supplying a treatment gas into a reaction chamber of the thin film forming apparatus and forming a thin film on an object to be processed, the method including: supplying a cleaning gas including fluorine gas, hydrogen fluoride gas, and chlorine gas into the reaction chamber heated to a predetermined temperature to remove the extraneous matter.Type: ApplicationFiled: March 27, 2012Publication date: October 4, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Mitsuhiro OKADA, Yukio TOJO, Kenji TAGO, Kazuaki NISHIMURA
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Publication number: 20100218786Abstract: Provided are a storage medium and a cleaning method of a plasma processing apparatus capable of more securely removing a deposit and preventing occurrence of any problems caused by a remaining deposit as compared to the conventional method. A cleaning gas which contains an oxygen gas and a nitrogen gas and has a ratio of “nitrogen gas flow rate/(nitrogen gas flow rate+oxygen gas flow rate)” in a range from about 0.05 to about 0.5 is introduced into a processing chamber when a substrate is not mounted on a mounting table, and, then, the inside of the processing chamber is cleaned by applying a high frequency power between the mounting table and an upper electrode and exciting the cleaning gas into plasma.Type: ApplicationFiled: February 24, 2010Publication date: September 2, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Masahiro Ogasawara, Kenji Tago, Junichi Sasaki, Mafumi Sato
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Patent number: 7700156Abstract: In a method of forming a silicon oxide film, a target substrate that has a silicon layer on a surface is loaded into a process area within a reaction container, while setting the process area to have a loading temperature of 400° C. or less. Then, the process area that accommodates the target substrate is heated, from the loading temperature to a process temperature of 650° C. or more. Water vapor is supplied into the reaction container during said heating the process area, while setting the water vapor to have a first concentration in an atmosphere of the process area, and setting the process area to have a first reduced pressure. After said heating the process area to the process temperature, an oxidation gas is supplied into the reaction container, thereby oxidizing the silicon layer to form a silicon oxide film.Type: GrantFiled: June 30, 2004Date of Patent: April 20, 2010Assignees: Tokyo Electron Limited, Kabushiki Kaisha ToshibaInventors: Kimiya Aoki, Katsushi Suzuki, Asami Shirakawa, Kenji Tago, Keisuke Suzuki, Kazuo Saki, Shinji Mori
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Publication number: 20090242128Abstract: A plasma processing apparatus includes an radio frequency (RF) power supply for applying an RF power for generating a plasma to at least one of an upper and a lower electrode which are disposed to face each other in a processing chamber, a high voltage power supply for applying a high voltage to the lower electrode to electrostatically adsorb the substrate to be held thereon and a control unit for controlling the RF power supply and the high voltage power supply. The control unit controls the high voltage power supply so as to apply a high voltage equal to or less than ?1500 V to the lower electrode.Type: ApplicationFiled: March 26, 2009Publication date: October 1, 2009Applicant: TOKYO ELECTRON LIMITEDInventors: Kenji TAGO, Hiroshi Tsuchiya, Yuji Otsuka, Hiroshi Tsumjimoto, Toshifumi Nagaiwa, Tsuyoshi Yoshida
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Patent number: 6925731Abstract: A cleaning process for cleaning a thermal processing apparatus includes: a heating step of heating an interior of a reaction tube at 300° C., and a cleaning step of removing deposits deposited in the thermal processing apparatus. In the cleaning step, a cleaning gas containing fluorine gas, chlorine gas and nitrogen gas is supplied into the interior of the reaction tube heated at 300° C. to remove silicon nitride so to clean an interior of the thermal processing apparatus.Type: GrantFiled: February 20, 2002Date of Patent: August 9, 2005Assignee: Tokyo Electron LimitedInventors: Kazuaki Nishimura, Yukio Tojo, Phillip Spaull, Kenji Tago
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Publication number: 20050090123Abstract: A cleaning process for cleaning a thermal processing apparatus includes: a heating step of heating an interior of a reaction tube at 300° C., and a cleaning step of removing deposits deposited in the thermal processing apparatus. In the cleaning step, a cleaning gas containing fluorine gas, chlorine gas and nitrogen gas is supplied into the interior of the reaction tube heated at 300° C. to remove silicon nitride so to clean an interior of the thermal processing apparatus.Type: ApplicationFiled: February 20, 2002Publication date: April 28, 2005Inventors: Kazuaki Nishimura, Yukio Tojo, Phillip Spaull, Kenji Tago
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Publication number: 20050056220Abstract: In a method of forming a silicon oxide film, a target substrate that has a silicon layer on a surface is loaded into a process area within a reaction container, while setting the process area to have a loading temperature of 400° C. or less. Then, the process area that accommodates the target substrate is heated, from the loading temperature to a process temperature of 650° C. or more. Water vapor is supplied into the reaction container during said heating the process area, while setting the water vapor to have a first concentration in an atmosphere of the process area, and setting the process area to have a first reduced pressure. After said heating the process area to the process temperature, an oxidation gas is supplied into the reaction container, thereby oxidizing the silicon layer to form a silicon oxide film.Type: ApplicationFiled: June 30, 2004Publication date: March 17, 2005Inventors: Kimiya Aoki, Katsushi Suzuki, Asami Shirakawa, Kenji Tago, Keisuke Suzuki, Kazuo Saki, Shinji Mori
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Patent number: 6344387Abstract: A wafer boat that supports a plurality of semiconductor wafers at a predetermined pitch, which are to be processed by a vertical thermal processing furnace, comprises a plurality of support columns; wafer support grooves formed in the support columns for supporting the peripheral edges of the wafers; and a film thickness equalization plate that is substantially the same size as the wafers, or is larger than the wafers, and is provided in wafer support grooves that are adjacent to one another in the vertical direction. This configuration ensures the same type of film is formed on the surface facing the surface of the wafer, achieving uniformity of the thus-formed film thickness.Type: GrantFiled: May 11, 2000Date of Patent: February 5, 2002Assignee: Tokyo Electron LimitedInventors: Kazuhide Hasebe, Atsumi Ito, Kenji Tago, Teruyuki Hayashi
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Patent number: 6156121Abstract: A wafer boat that supports a plurality of semiconductor wafers at a predetermined pitch, which are to be processed by a vertical thermal processing furnace, comprises a plurality of support columns; wafer support grooves formed in the support columns for supporting the peripheral edges of the wafers; and a film thickness equalization plate that is substantially the same size as the wafers. or is larger than the wafers, and is provided in wafer support grooves that are adjacent to one another in the vertical direction. This configuration ensures the same type of film is formed on the surface facing the surface of the wafer, achieving uniformity of the thus-formed film thickness.Type: GrantFiled: December 16, 1997Date of Patent: December 5, 2000Assignee: Tokyo Electron LimitedInventors: Kazuhide Hasebe, Atsumi Ito, Kenji Tago
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Patent number: 5556275Abstract: A heat treatment apparatus comprising a holder, a hollow cylindrical cover, a flat plate, and a processing chamber. The holder holds disk-shaped objects, each having an orientation flat portion at circumference. The objects are arranged coaxially and spaced at predetermined intervals, with the orientation flat portions aligned with one another. The cover has gas ports and surrounds the objects held by the holder and is spaced from a circumference of each object by a predetermined distance. The flat plate is mounted on an inner surface of the cover and opposes the orientation flat portions of the objects. In the processing chamber, the objects held by the holder are processed by using a process gas.Type: GrantFiled: September 30, 1994Date of Patent: September 17, 1996Assignees: Tokyo Electron Limited, Tokyo Electron Tohoku LimitedInventors: Kazunari Sakata, Kenji Tago, Mitsuo Mizukami
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Patent number: 5536320Abstract: A waiting space is provided below a processing vessel for processing objects to be processed. An objects to be processed mount which is movable up and down into the processing vessel is disposed in the waiting space for mounting objects to be processed. There is provided a natural oxide film generation suppressing gas supply system which supplies a natural oxide film generation suppressing gas for suppressing generation of natural oxide films on the surfaces of the objects to be processed, and a dried gas with a low dew point is supplied as a natural oxide film generation suppressing gas by the natural oxide film generation suppressing gas supply system. The processing apparatus can suppress generation of natural oxide films inexpensively and efficiently.Type: GrantFiled: March 7, 1994Date of Patent: July 16, 1996Assignee: Tokyo Electron Kabushiki KaishaInventors: Harunori Ushikawa, Kenji Tago