Abstract: In a solid-state image-sensing device, when image sensing is performed, in each pixel, MOS transistors T1 and T5 are turned on and a MOS transistor T6 is turned off so that a MOS transistor T2 operates in a subthreshold region. When resetting is preformed, in each pixel, the MOS transistors T1 and T5 are turned off and the MOS transistor T6 is turned on so that the gate voltage of the MOS transistor T2 is kept constant. In this state, the MOS transistor T2 is brought first into a conducting state and then, by turning a signal ?VPS to a high level, into a cut-off state. This permits a signal proportional to the threshold value of the MOS transistor T2 to be output as compensation data.

Abstract: In a solid-state image-sensing device, when image sensing is performed, in each pixel, MOS transistors T1 and T5 are turned on and a MOS transistor T6 is turned off so that a MOS transistor T2 operates in a subthreshold region. When resetting is preformed, in each pixel, the MOS transistors T1 and T5 are turned off and the MOS transistor T6 is turned on so that the gate voltage of the MOS transistor T2 is kept constant. In this state, the MOS transistor T2 is brought first into a conducting state and then, by turning a signal ?VPS to a high level, into a cut-off state. This permits a signal proportional to the threshold value of the MOS transistor T2 to be output as compensation data.

Abstract: A vehicle body floor structure is provided with a floor, a side sill extendedly arranged at a side of the floor and in a longitudinal direction of a vehicle body to have a closed section, a pair of floor cross members extendedly arranged on the floor in a widthwise direction of the vehicle body, so as to face with each other in the longitudinal direction of the vehicle body, and a first reinforcing member, provided between the pair of floor cross members in the longitudinal direction of the vehicle body and within the closed section of the side sill, to exhibit property allowing a dimensional condition thereof to be maintained against a side collision load.

Abstract: In a solid-state image-sensing device, after completion of image sensing by individual pixels, in each pixel, a signal ?VRB fed to a capacitor C1 connected to the gate of a first MOS transistor T1 is turned to a high level to make it easy for a negative electric charge to flow into the MOS transistor T1. This permits quick recombination of the positive electric charges accumulated at the drain and gate of the MOS transistor T1, at the gate of a MOS transistor T2, at the anode of a photodiode, and in a capacitor C2, and thereby makes quick resetting possible.

Abstract: In a solid-state image-sensing device, when image sensing is performed, in each pixel, MOS transistors T1 and T5 are turned on and a MOS transistor T6 is turned off so that a MOS transistor T2 operates in a subthreshold region. When resetting is preformed, in each pixel, the MOS transistors T1 and T5 are turned off and the MOS transistor T6 is turned on so that the gate voltage of the MOS transistor T2 is kept constant. In this state, the MOS transistor T2 is brought first into a conducting state and then, by turning a signal ?VPS to a high level, into a cut-off state. This permits a signal proportional to the threshold value of the MOS transistor T2 to be output as compensation data.

Abstract: In a solid-state image-sensing device, after completion of image sensing by individual pixels, in each pixel, a signal ?VRB fed to a capacitor C1 connected to the gate of a first MOS transistor T1 is turned to a high level to make it easy for a negative electric charge to flow into the MOS transistor T1. This permits quick recombination of the positive electric charges accumulated at the drain and gate of the MOS transistor T1, at the gate of a MOS transistor T2, at the anode of a photodiode, and in a capacitor C2, and thereby makes quick resetting possible.

Abstract: In a solid-state image-sensing device, when image sensing is performed, in each pixel, MOS transistors T1 and T5 are turned on and a MOS transistor T6 is turned off so that a MOS transistor T2 operates in a subthreshold region. When resetting is preformed, in each pixel, the MOS transistors T1 and T5 are turned off and the MOS transistor T6 is turned on so that the gate voltage of the MOS transistor T2 is kept constant. In this state, the MOS transistor T2 is brought first into a conducting state and then, by turning a signal ?VPS to a high level, into a cut-off state. This permits a signal proportional to the threshold value of the MOS transistor T2 to be output as compensation data.

Abstract: A vehicle body floor structure is provided with a floor, a side sill extendedly arranged at a side of the floor and in a longitudinal direction of a vehicle body to have a closed section, a pair of floor cross members extendedly arranged on the floor in a widthwise direction of the vehicle body, so as to face with each other in the longitudinal direction of the vehicle body, and a first reinforcing member, provided between the pair of floor cross members in the longitudinal direction of the vehicle body and within the closed section of the side sill, to exhibit property allowing a dimensional condition thereof to be maintained against a side collision load.

Abstract: A system for receiving inquiry by speech includes a plurality of receiving board apparatus capable of receiving an inquiry by speech from an inquirer, a VoIP gateway apparatus connected via the LAN to a plurality of receiving apparatuses for transmitting/receiving via the LAN to/from the receiving board apparatus a speech packet containing speech data relating to communication between the recipient of the receiving board apparatus which has answered to an inquiry and inquirer, and a speech multiplexing HUB apparatus for receiving speech data input to each receiving board apparatus, time-division multiplexing them, and distributing them in parallel to each receiving board apparatus.

Abstract: A solid-state image-sensing device has a photosensitive element that produces an electric signal commensurate with the amount of light incident thereon, a transistor of which the first electrode and the control electrode are connected to one electrode of the photosensitive element, and a resetting portion for resetting the transistor by feeding a predetermined pulse signal to the second electrode of the transistor. The resetting portion resets the transistor in such a way as to inhibit the transistor from operating in a subthreshold region when the amount of light incident on the photosensitive element is below a predetermined level.

Abstract: A solid-state, two-dimensional image sensing device having a matrix of pixels each of which employs a photosensor that generates a photocurrent and a MOS circuit which outputs a signal proportional to the logarithm of the integral over time of the photocurrent. The sensor includes an integration control switching device so that all pixels in the array have equal integration time. The sensor integrates the signal for each pixel for a period of time and stores the integrated signal in a pixel signal storage location. To read out the stored signal each pixel includes an amplifier to increase the signal during read out. The sensor further accumulates signal in either a MOS transistor pn-junction or a secondary pixel storage location during a time that the integrated pixel signal is being read out so that image information can be collected continuously even while the integrated pixel signal for each pixel is being read.

Abstract: A solid-state, two-dimensional image sensing device having a matrix of pixels each of which employs a photosensor that generates a photocurrent and a MOS circuit which outputs a signal proportional to the logarithm of the integral over time of the photocurrent. The sensor includes an integration control switching device so that all pixels in the array have equal integration time. The sensor integrates the signal for each pixel for a period of time and stores the integrated signal in a pixel signal storage location. The sensor further accumulates signal in a MOS transistor pn-junction during a time that the integrated pixel signal is being read out so image information can be collected continuously even while the integrated pixel signal for each pixel is being read.

Abstract: A solid-state, two-dimensional image sensing device having a matrix of pixels each of which employs a photosensor that generates a photocurrent and a MOS circuit which outputs a signal proportional to the logarithm of the integral over time of the photocurrent. The sensor includes an integration control switching device so that all pixels in the array have equal integration time. The sensor integrates the signal for each pixel for a period of time and stores the integrated signal in a pixel signal storage location. To read out the stored signal each pixel includes an amplifier to increase the signal during read out. The sensor further accumulates signal in either a MOS transistor pn-junction or a secondary pixel storage location during a time that the integrated pixel signal is being read out so that image information can be collected continuously even while the integrated pixel signal for each pixel is being read.

Abstract: In an image-sensing apparatus, the shading data acquired when uniform light is shone on a sensor 1 is stored in a memory 3, and the temperature T0 of the sensor 1 detected by a temperature detector 6 at that time is stored in a calculation circuit 7. During image shooting, the temperature T of the sensor 1 is detected by the temperature detector 6 so as to calculate the temperature ratio T/T0 of this temperature to the temperature T0 stored in the calculation circuit 7. Then, a temperature compensation circuit 41 multiplies the shading data for the pixels that output image data by T/T0. A correction calculation circuit (COR) 4 subtracts the shading data thus multiplied by T/T0 from the image data, and thereby the unevenness in sensitivity among the pixels of the sensor 1 is corrected.

Abstract: A solid state image sensing device provided with a gamma correction circuit which corrects a logarithmically converted value derived from the logarithmic conversion of individual pixel data output from individual photoelectric conversion elements, thereby easily correcting discrepancies and differences in the gamma characteristics of the individual pixels of a photoelectric conversion element which converts a light signal to an electrical signal.

Abstract: In an image-sensing apparatus, the shading data acquired when uniform light is shone on a sensor 1 is stored in a memory 3, and the temperature T0 of the sensor 1 detected by a temperature detector 6 at that time is stored in a calculation circuit 7. During image shooting, the temperature T of the sensor 1 is detected by the temperature detector 6 so as to calculate the temperature ratio T/T0 of this temperature to the temperature T0 stored in the calculation circuit 7. Then, a temperature compensation circuit 41 multiplies the shading data for the pixels that output image data by T/T0. A correction calculation circuit (COR) 4 subtracts the shading data thus multiplied by T/T0 from the image data, and thereby the unevenness in sensitivity among the pixels of the sensor 1 is corrected.

Abstract: A solid-state image-sensing device has a photosensitive element that produces an electric signal commensurate with the amount of light incident thereon, a transistor of which the first electrode and the control electrode are connected to one electrode of the photosensitive element, and a resetting portion for resetting the transistor by feeding a predetermined pulse signal to the second electrode of the transistor. The resetting portion resets the transistor in such a way as to inhibit the transistor from operating in a subthreshold region when the amount of light incident on the photosensitive element is below a predetermined level.

Abstract: In a solid-state image-sensing device, when light is incident on a phototransistor PTr, the pn junction between the base and emitter thereof causes a current to flow in the base of the phototransistor PTr in proportion to the amount of incident light. Through amplification, this base current causes an emitter current to flow as a photocurrent, and thus a voltage logarithmically proportional to the amount of incident light appears at the gate of a MOS transistor T1 that is made to operate in a subthreshold region. A voltage obtained through integration of the thus logarithmically converted voltage appears at the node “a”, and, when a MOS transistor T6 is turned on, an output current corresponding to the voltage at the node “a” is delivered to an output signal line.

Abstract: A solid state image sensing device having a semiconductor substrate, a first diffusion region of a positive or negative conductive type provided on the semiconductor substrate, a plurality of second diffusion regions each of which is an opposite conductive type relative to the first diffusion region and is provided in the first diffusion region, and a semiconductor thin layer provided on at least the second diffusion regions.

Abstract: A solid state image sensing device having a semiconductor substrate, a first diffusion region of a positive or negative conductive type provided on the semiconductor substrate, a plurality of second diffusion regions each of which is an opposite conductive type relative to the first diffusion region and is provided in the first diffusion region, and a semiconductor thin layer provided on at least the second diffusion regions.