Abstract: When there is a movement or attitude change of an upper-airspace staying type communication relay apparatus, it is suppressed of an increase in control signals and disconnection of communication with a terminal apparatus in a cell configuring a service area, and it is reduced of a circuit scale and power consumption of a base-station processing section.

Abstract: When there is a movement or attitude change of an upper-airspace staying type communication relay apparatus, it is suppressed of an increase in control signals and disconnection of communication with a terminal apparatus in a cell configuring a service area, and it is reduced of a circuit scale and power consumption of a base-station processing section.

Abstract: A positive electrode active material precursor for a non-aqueous electrolyte secondary battery, including a nickel composite hydroxide particle, is provided, wherein a cross section of the nickel composite hydroxide particle includes a void, a ratio of an area of the void to the cross section of the nickel composite hydroxide particle is less than or equal to 5.0%, a circular region having a radius of 1.78 ?m is set at a position where a ratio of an area of the void to the circular region is maximum, on the cross section of the nickel composite hydroxide particle, and the ratio of the area of the void to the circular region is less than or equal to 20%.

Abstract: A positive electrode active material precursor for a non-aqueous electrolyte secondary battery, including-nickel composite hydroxide particles, is provided, wherein a cross section of each nickel composite hydroxide particle includes voids, and an average value of a ratio of an area of the voids in an area of each of the plurality of regions partitioned by predetermined boundary lines, is greater than or equal to 0.5% and less than or equal to 5.0%, and a standard deviation of the ratio of the area of the voids in the area of each of the plurality of regions partitioned by the predetermined boundary lines, is less than or equal to 1.0.

Abstract: The photo-video based spatial-temporal volumetric capture system more efficiently, produces high frame rate and high resolution 4D dynamic human videos, without a need for 2 separate 3D and 4D scanner systems, by combining a set of high frame rate machine vision video cameras with a set of high resolution photography cameras. It reduces a need for manual CG works, by temporally up-sampling shape and texture resolution of 4D scanned video data from a temporally sparse set of higher resolution 3D scanned keyframes that are reconstructed both by using machine vision cameras and photography cameras. Unlike typical performance capture system that uses single static template model at initialization (e.g. A or pose), the photo-video based spatial-temporal volumetric capture system stores multiple keyframes of high resolution 3D template models for robust and dynamic shape and texture refinement of 4D scanned video sequence.

Abstract: A semiconductor memory device comprises: first conductive layers arranged in a first direction; a first semiconductor layer facing the first conductive layers; a second semiconductor layer facing the first conductive layers; second conductive layers arranged in the first direction; third conductive layers arranged in the first direction; a third semiconductor layer facing the second conductive layers and connected to the first semiconductor layer; a fourth semiconductor layer facing the third conductive layers and connected to the second semiconductor layer; a fourth conductive layer facing the third semiconductor layer; and a fifth conductive layer connected to the third conductive layers. A distance from a central axis of the third semiconductor layer to a central axis of the fourth semiconductor layer is larger than a distance from a central axis of the first semiconductor layer to a central axis of the second semiconductor layer.

Abstract: Mesh-tracking based dynamic 4D modeling for machine learning deformation training includes: using a volumetric capture system for high-quality 4D scanning, using mesh-tracking to establish temporal correspondences across a 4D scanned human face and full-body mesh sequence, using mesh registration to establish spatial correspondences between a 4D scanned human face and full-body mesh and a 3D CG physical simulator, and training surface deformation as a delta from the physical simulator using machine learning. The deformation for natural animation is able to be predicted and synthesized using the standard MoCAP animation workflow. Machine learning based deformation synthesis and animation using standard MoCAP animation workflow includes using single-view or multi-view 2D videos of MoCAP actors as input, solving 3D model parameters (3D solving) for animation (deformation not included), and given 3D model parameters solved by 3D solving, predicting 4D surface deformation from ML training.

Abstract: Mesh-tracking based dynamic 4D modeling for machine learning deformation training includes: using a volumetric capture system for high-quality 4D scanning, using mesh-tracking to establish temporal correspondences across a 4D scanned human face and full-body mesh sequence, using mesh registration to establish spatial correspondences between a 4D scanned human face and full-body mesh and a 3D CG physical simulator, and training surface deformation as a delta from the physical simulator using machine learning. The deformation for natural animation is able to be predicted and synthesized using the standard MoCAP animation workflow. Machine learning based deformation synthesis and animation using standard MoCAP animation workflow includes using single-view or multi-view 2D videos of MoCAP actors as input, solving 3D model parameters (3D solving) for animation (deformation not included), and given 3D model parameters solved by 3D solving, predicting 4D surface deformation from ML training.

Abstract: According to one embodiment, a semiconductor memory device includes: a stacked body having a stacked structure in which a plurality of conductive layers and a plurality of insulating layers are alternately stacked one by one, the stacked body including a memory region and a dummy region arranged in a first direction intersecting a stacking direction of the plurality of conductive layers, the dummy region including a first stepped portion in which at least a part of the plurality of conductive layers on an upper layer side is processed in a stepped shape and terminates at an end portion opposite to the memory region in the first direction; and first and second plate-like portions extending in the stacking direction and the first direction in the stacked body at positions in the memory region away from each other in a second direction intersecting the stacking direction and the first direction, the first and second plate-like portions being directly or indirectly connected to each other and terminating in the d

Abstract: An integrated photo-video volumetric capture system for 3D/4D scanning acquires 3D scans and 4D scans by acquiring images and videos simultaneously. The volumetric capture system for high-quality 4D scanning and mesh-tracking is used to establish topology correspondences across a 4D scanned mesh sequence for generating corrective shapes which will be used in shape interpolation and skeleton driven deformation. The volumetric capture system aids mesh-tracking for maintaining mesh registration (topology consistency) along with ease of extreme pose modeling. Major upper body and lower body joints are able to be identified that are important for generating deformation and capturing the same using a wide range of motion for all movement types across all joint categories. By using the volumetric capture system and mesh tracking, the topology changes are tracked. Each pose captured will have the same topology which makes blending between multiple poses easier and more accurate.

Abstract: There is provided a cathode active material precursor for a non-aqueous electrolyte secondary battery that is a complex metal hydroxide with a flow factor of 10 or greater to 20 or smaller.

Abstract: A semiconductor memory device comprises: first conductive layers arranged in a first direction; a first semiconductor layer facing the first conductive layers; a second semiconductor layer facing the first conductive layers; second conductive layers arranged in the first direction; third conductive layers arranged in the first direction; a third semiconductor layer facing the second conductive layers and connected to the first semiconductor layer; a fourth semiconductor layer facing the third conductive layers and connected to the second semiconductor layer; a fourth conductive layer facing the third semiconductor layer; and a fifth conductive layer connected to the third conductive layers. A distance from a central axis of the third semiconductor layer to a central axis of the fourth semiconductor layer is larger than a distance from a central axis of the first semiconductor layer to a central axis of the second semiconductor layer.

Abstract: A semiconductor memory device according to an embodiment includes a substrate, first and second conductive layers, first and second pillars, and a first member. The first conductive layer includes a first portion, a second portion, and a third portion above the second portion. The second conductive layers are stacked above the first conductive layer. The first pillar includes a first semiconductor layer in contact with the first portion in a direction crossing the stacked direction. The second pillar is provided to penetrate the second conductive layers and the third portion in the stacked direction. The first member is provided between the first and second pillars and between the second and third portions.

Abstract: The photo-video based spatial-temporal volumetric capture system more efficiently, produces high frame rate and high resolution 4D dynamic human videos, without a need for 2 separate 3D and 4D scanner systems, by combining a set of high frame rate machine vision video cameras with a set of high resolution photography cameras. It reduces a need for manual CG works, by temporally up-sampling shape and texture resolution of 4D scanned video data from a temporally sparse set of higher resolution 3D scanned keyframes that are reconstructed both by using machine vision cameras and photography cameras. Unlike typical performance capture system that uses single static template model at initialization (e.g. A or pose), the photo-video based spatial-temporal volumetric capture system stores multiple keyframes of high resolution 3D template models for robust and dynamic shape and texture refinement of 4D scanned video sequence.

Abstract: A semiconductor memory device according to an embodiment includes a substrate, first and second conductive layers, first and second pillars, and a first member. The first conductive layer includes a first portion, a second portion, and a third portion above the second portion. The second conductive layers are stacked above the first conductive layer. The first pillar includes a first semiconductor layer in contact with the first portion in a direction crossing the stacked direction. The second pillar is provided to penetrate the second conductive layers and the third portion in the stacked direction. The first member is provided between the first and second pillars and between the second and third portions.

Abstract: Mesh-tracking based dynamic 4D modeling for machine learning deformation training includes: using a volumetric capture system for high-quality 4D scanning, using mesh-tracking to establish temporal correspondences across a 4D scanned human face and full-body mesh sequence, using mesh registration to establish spatial correspondences between a 4D scanned human face and full-body mesh and a 3D CG physical simulator, and training surface deformation as a delta from the physical simulator using machine learning. The deformation for natural animation is able to be predicted and synthesized using the standard MoCAP animation workflow. Machine learning based deformation synthesis and animation using standard MoCAP animation workflow includes using single-view or multi-view 2D videos of MoCAP actors as input, solving 3D model parameters (3D solving) for animation (deformation not included), and given 3D model parameters solved by 3D solving, predicting 4D surface deformation from ML training.

Abstract: A positive electrode active material precursor for a non-aqueous electrolyte secondary battery, including a nickel composite hydroxide particle, is provided, wherein a cross section of the nickel composite hydroxide particle includes a void, and when the cross section of the nickel composite hydroxide particle is divided into a plurality of regions by boundary lines arranged in a grid such that each of the plurality of regions partitioned by the boundary lines has a size of 2 ?m square, an average value of a ratio of an area of the void in an area of each of the plurality of regions partitioned by the boundary lines, is greater than or equal to 0.5% and less than or equal to 5.0%, and a standard deviation of the ratio of the area of the void in the area of each of the plurality of regions partitioned by the boundary lines, is less than or equal to 1.0.

Abstract: A positive electrode active material precursor for a non-aqueous electrolyte secondary battery, including a nickel composite hydroxide particle, is provided, wherein a cross section of the nickel composite hydroxide particle includes a void, a ratio of an area of the void to the cross section of the nickel composite hydroxide particle is less than or equal to 5.0%, a circular region having a radius of 1.78 ?m is set at a position where a ratio of an area of the void to the circular region is maximum, on the cross section of the nickel composite hydroxide particle, and the ratio of the area of the void to the circular region is less than or equal to 20%.

Abstract: A semiconductor memory device according to an embodiment includes a substrate, first and second conductive layers, first and second pillars, and a first member. The first conductive layer includes a first portion, a second portion, and a third portion above the second portion. The second conductive layers are stacked above the first conductive layer. The first pillar includes a first semiconductor layer in contact with the first portion in a direction crossing the stacked direction. The second pillar is provided to penetrate the second conductive layers and the third portion in the stacked direction. The first member is provided between the first and second pillars and between the second and third portions.

Abstract: There is provided a cathode active material precursor for a non-aqueous electrolyte secondary battery that is a complex metal hydroxide with a flow factor of 10 or greater to 20 or smaller.