Abstract: A novel target molecule for pruritus was found, and a novel means for eliminating pruritus is provided.

Abstract: In an accelerator device, a pedal is rotatable in an accelerator opening direction by a pedaling force of a pad. An arm connects the pedal to the pad. A biasing member biases the pedal in an accelerator closing direction via the arm. The arm has a shaft portion that is assembled to the pad, and the pad has a pair of support walls that rotatably support the shaft portion. The pair of support walls have wall surfaces facing each other, each of the which is provided with a bearing portion and a thickening portion. The thickening portion includes a curved surface or a slope surface having a surface area broader as a distance from the bearing portion increases.

Abstract: A method of manufacturing a nonvolatile memory device that is a variable resistance nonvolatile memory device, which has good consistency with a dual damascene process that is suitable for the formation of fine copper lines and which enables large capacity and high integration. This method includes: forming a variable resistance element, a contact hole and a line groove; and forming a current steering layer of a bidirectional diode element above interlayer insulating layers and a variable resistance layer to cover the line groove without covering a bottom surface of the contact hole.

Abstract: A non-volatile semiconductor memory device comprises a plurality of memory cell holes (101) formed through an interlayer insulating layer (80) at respective cross-points of a plurality of first wires (10) of a stripe shape and a plurality of second wires (20) of a stripe shape when viewed from above such that the memory cell holes (101) expose upper surfaces of the plurality of first wires, respectively, a plurality of dummy holes (111) formed on the plurality of first wires in the interlayer insulating layer such that the dummy holes reach the upper surfaces of the plurality of first wires, respectively, and stacked-layer structures formed inside the memory cell holes and inside the dummy holes, respectively, each of the stacked-layer structures including a first electrode (30) and a variable resistance layer (40); an area of a portion of the first wire which is exposed in a lower opening of one of the dummy holes being greater than an area of a portion of the first wire which is exposed in a lower opening o

Abstract: A method of manufacturing a nonvolatile memory device that is a variable resistance nonvolatile memory device, which has good consistency with a dual damascene process that is suitable for the formation of fine copper lines and which enables large capacity and high integration. This method includes: forming a variable resistance element, a contact hole and a line groove; and forming a current steering layer of a bidirectional diode element above interlayer insulating layers and a variable resistance layer to cover the line groove without covering a bottom surface of the contact hole.

Abstract: A resistance variable element (100) used in a through-hole cross-point structure memory device, according to the present invention, and a resistance variable memory device including the resistance variable element, includes a substrate (7) and an interlayer insulating layer (3) formed on the substrate, and have a configuration in which a through-hole (4) is formed to penetrate the interlayer insulating layer, a first resistance variable layer (2) comprising transition metal oxide is formed outside the through-hole, a second resistance variable layer (5) comprising transition metal oxide is formed inside the through-hole, the first resistance variable layer is different in resistivity from the second resistance variable layer, and the first resistance variable layer and the second resistance variable layer are in contact with each other only in an opening (20) of the through-hole which is closer to the substrate.

Abstract: A nonvolatile memory device of the present invention includes a substrate (1), first wires (3), first resistance variable elements (5) and lower electrodes (6) of first diode elements which are filled in first through-holes (4), respectively, second wires (11) which cross the first wires 3 perpendicularly to the first wires 3, respectively, and each of which includes a semiconductor layer (7) of a first diode elements, a conductive layer (8) and a semiconductor layer (10) of a second diode elements which are stacked together in this order, second resistance variable elements (16) and upper electrodes (14) of second diode elements which are filled into second through holes (13), respectively, and third wires (17), and the conductive layer (8) of each second wires (11) also serves as the upper electrode of the first diode elements (9) and the lower electrode of the second diode elements (15).

Abstract: A current steering element which can prevent occurrence of write disturb even when electric pulses having different polarities are applied and can cause large current to flow through a variable resistance element, and with which data can be written without problem. In a storage element (3) including: a variable resistance element (1) whose electric resistance value changes in response to application of electric pulses having a positive polarity and a negative polarity and which maintains the changed electric resistance value; and the current steering element (2) that steers current flowing through the variable resistance element (1) when the electric pulses are applied, the current steering element (2) includes: a first electrode (32); a second electrode (31); and a current steering layer (33) interposed between the first electrode (32) and the second electrode (31). When the current steering layer (33) includes SiNx (0<x?0.

Abstract: A non-volatile semiconductor memory device comprises a plurality of memory cell holes (101) formed through an interlayer insulating layer (80) at respective cross-points of a plurality of first wires (10) of a stripe shape and a plurality of second wires (20) of a stripe shape when viewed from above such that the memory cell holes (101) expose upper surfaces of the plurality of first wires, respectively, a plurality of dummy holes (111) formed on the plurality of first wires in the interlayer insulating layer such that the dummy holes reach the upper surfaces of the plurality of first wires, respectively, and stacked-layer structures formed inside the memory cell holes and inside the dummy holes, respectively, each of the stacked-layer structures including a first electrode (30) and a variable resistance layer (40); an area of a portion of the first wire which is exposed in a lower opening of one of the dummy holes being greater than an area of a portion of the first wire which is exposed in a lower opening o

Abstract: A nonvolatile memory device of the present invention comprises a substrate (1), first wires (3), first filling constituents (5) filled into first through-holes (4), respectively, second wires (11) which cross the first wires (3) perpendicularly to the first wires (3), respectively, each of the second wires (11) including a plurality of layers including a resistance variable layer (6) of each of first resistance variable elements, a conductive layer (7) and a resistance variable layer (8) of each of second resistance variable elements which are stacked together in this order, second filling constituents (14) filled into second through-holes (13), respectively, and third wires (15), and the conductive layer (7) of the second wires (11) serves as the electrodes of the first resistance variable elements (9) and the electrodes of the second resistance variable elements (10).

Abstract: A recirculation pump motor is supplied with a power from a unit auxiliary middle voltage bus through a power supply system including a first circuit breaker, a voltage source inverter, and a second circuit breaker electrically connected in series to provide a no-load operation by use of the voltage source inverter. The second circuit breaker may be multiplexed with more than one breaker electrically connected in series. An existing nuclear plant using a induction motor driving a hydraulic coupling mechanically coupled to a synchronous generator for driving the recirculation pump, such as an MfG set, may be subjected to a method of replacing the induction motor, the hydraulic coupling, and the synchronous generator with the voltage source inverter and a circuit breaker through electrically disconnection and removal.

Abstract: A resistance variable element (100) used in a through-hole cross-point structure memory device, according to the present invention, and a resistance variable memory device including the resistance variable element, includes a substrate (7) and an interlayer insulating layer (3) formed on the substrate, and have a configuration in which a through-hole (4) is formed to penetrate the interlayer insulating layer, a first resistance variable layer (2) comprising transition metal oxide is formed outside the through-hole, a second resistance variable layer (5) comprising transition metal oxide is formed inside the through-hole, the first resistance variable layer is different in resistivity from the second resistance variable layer, and the first resistance variable layer and the second resistance variable layer are in contact with each other only in an opening (20) of the through-hole which is closer to the substrate.

Abstract: A current steering element which can prevent occurrence of write disturb even when electric pulses having different polarities are applied and can cause large current to flow through a variable resistance element, and with which data can be written without problem. In a storage element (3) including: a variable resistance element (1) whose electric resistance value changes in response to application of electric pulses having a positive polarity and a negative polarity and which maintains the changed electric resistance value; and the current steering element (2) that steers current flowing through the variable resistance element (1) when the electric pulses are applied, the current steering element (2) includes: a first electrode (32); a second electrode (31); and a current steering layer (33) interposed between the first electrode (32) and the second electrode (31). When the current steering layer (33) includes SiNx (0<x?0.

Abstract: A nonvolatile memory device of the present invention comprises a substrate (1), first wires (3), first filling constituents (5) filled into first through-holes (4), respectively, second wires (11) which cross the first wires (3) perpendicularly to the first wires (3), respectively, each of the second wires (11) including a plurality of layers including a resistance variable layer (6) of each of first resistance variable elements, a conductive layer (7) and a resistance variable layer (8) of each of second resistance variable elements which are stacked together in this order, second filling constituents (14) filled into second through-holes (13), respectively, and third wires (15), and the conductive layer (7) of the second wires (11) serves as the electrodes of the first resistance variable elements (9) and the electrodes of the second resistance variable elements (10).

Abstract: A nonvolatile memory device of the present invention includes a substrate (1), first wires (3), first resistance variable elements (5) and lower electrodes (6) of first diode elements which are filled in first through-holes (4), respectively, second wires (11) which cross the first wires 3 perpendicularly to the first wires 3, respectively, and each of which includes a semiconductor layer (7) of a first diode elements, a conductive layer (8) and a semiconductor layer (10) of a second diode elements which are stacked together in this order, second resistance variable elements (16) and upper electrodes (14) of second diode elements which are filled into second through holes (13), respectively, and third wires (17), and the conductive layer (8) of each second wires (11) also serves as the upper electrode of the first diode elements (9) and the lower electrode of the second diode elements (15).

Abstract: A recirculation pump motor is supplied with a power from a unit auxiliary middle voltage bus through a power supply system including a first circuit breaker, a voltage source inverter, and a second circuit breaker electrically connected in series to provide a no-load operation by use of the voltage source inverter. The second circuit breaker may be multiplexed with more than one breaker electrically connected in series. An existing nuclear plant using a induction motor driving a hydraulic coupling mechanically coupled to a synchronous generator for driving the recirculation pump, such as an MfG set, may be subjected to a method of replacing the induction motor, the hydraulic coupling, and the synchronous generator with the voltage source inverter and a circuit breaker through electrically disconnection and removal.

Abstract: To provide an optical device in which fragments of a concave reflection mirror surrounding a discharge lamp and fragments of an optically permeable glass plate covering the aperture at the front of the concave reflection mirror do not fall and scatter, even if a short-arc high pressure discharge lamp that lights at extremely high mercury vapor pressure should rupture, the outer surface of the glass concave reflection mirror (20) surrounding the high pressure mercury discharge lamp (10) in which 0.16 mg/mm3 or more of mercury is sealed in a discharge envelope is covered by a scatter prevention film (40) made of a polymer material, for example, a fluorine-based resin. Furthermore, a scatter prevention film is applied to the outer surface of the concave reflection mirror in a region of incidence of light over a range within ±40° of the direction orthogonal to the axis of the high pressure mercury discharge lamp.

Abstract: To provide an optical device in which fragments of a concave reflection mirror surrounding a discharge lamp and fragments of an optically permeable glass plate covering the aperture at the front of the concave reflection mirror do not fall and scatter, even if a short-arc high pressure discharge lamp that lights at extremely high mercury vapor pressure should rupture, the outer surface of the glass concave reflection mirror (20) surrounding the high pressure mercury discharge lamp (10) in which 0.16 mg/mm3 or more of mercury is sealed in a discharge envelope is covered by a scatter prevention film (40) made of a polymer material, for example, a fluorine-based resin. Furthermore, a scatter prevention film is applied to the outer surface of the concave reflection mirror in a region of incidence of light over a range within ±40° of the direction orthogonal to the axis of the high pressure mercury discharge lamp.

Abstract: A judgement section (10) and a ratio calculation section (11) in an image processing apparatus input image signals in digital form of n color components forming colors, transferred externally in time series, and calculate conversion parameters indicating change of ratios of signal strength values between input image signals per color component based on a total sum of the ratios of synthesis signal values, each conversion section (12, 13, 14) and a signal range calculation section (15) converts input image signals to output image signal without any change of the ratio of signal strength values between the input image signals based on the conversion parameters, per color component.

Abstract: A methotrexate-containing transdermal preparation effective for rheumatoid arthritis comprises an organic amine. The organic amine may preferably be an alkonolamine such as monoethanolamine, diethanolamine, triethanolamine or diisopropanolamine, or an alkylamine such as ehtylamine, diethylamine or triethylamine. The transdermal preparation is, for example, a plaster, a cataplasm, an ointment, a cream or a lotion.