Abstract: A semiconductor memory device is formed to include: a substrate; a floating gate formed on the substrate via a gate insulating film; a control gate formed on an adjacent position to the floating gate via a tunnel insulating film; a spacer insulating film formed on the floating gate; and a protection film formed between the spacer insulating film and the control gate. In such a semiconductor memory device (MC), the protection film functions as a stopper of a side surface of the spacer insulating film when a part other than the spacer insulating film is etched.

Abstract: A semiconductor memory device is formed to include: a substrate; a floating gate formed on the substrate via a gate insulating film; a control gate formed on an adjacent position to the floating gate via a tunnel insulating film; a spacer insulating film formed on the floating gate; and a protection film formed between the spacer insulating film and the control gate. In such a semiconductor memory device (MC), the protection film functions as a stopper of a side surface of the spacer insulating film when a part other than the spacer insulating film is etched.

Abstract: A manufacturing method of a semiconductor device includes the step for forming a silicon nitride film having a first part where arsenic is included and a second part where less amount of or substantially no arsenic is included, the step for removing at least a portion of the first part by dry etching, and the step for removing at least a portion of the second part by wet etching. Since arsenic in the silicon nitride film is removed by dry etching, arsenic is never eluted into the wet etching liquid from the silicon nitride film during subsequent wet etching. Therefore, one can prevent the wet etching from being contaminated. Etching of the silicon nitride film is performed by a combination of dry etching and wet etching. Therefore, compared with the case where etching is performed only by dry etching, plasma damage to the region exposed in the plasma atmosphere except for the silicon nitride film can be decreased.

Abstract: There is disclosed an electrostatic image-developing carrier having a resin coat layer with an excellent mechanical strength. The carrier is prepared by repeatedly applying a mechanical impact force to the mixture of the core particle and the coating resin particle in a dry condition, wherein a molecular weight distribution chromatogram according to a gel permeation chromatography of a tetrahydro-furansoluble component in the resin coat layer has at least one peak or shoulder in a molecular weight range 1,000 to 20,000.

Abstract: A resin coated carrier for developing an electrostatic image is disclosed. The carrier coating layer comprises a silicone resin and a carbon fluoride having a BET specific surface area of not more than 100 m.sup.2 /g. The carrier imparts proper positive polarity triboelectric charge without charge control agent.

Abstract: A method for producing a carrier for an electrostatic image developer is disclosed. The carrier comprises a core particle and a resin coating layer and is produced by a method comprising stirring a mixture of core particles, resin particles and particles of a carbon fluoride to form a resin coating layer on the surface of each core particle, the resin coating layer contains the carbon fluoride dispersed therein, in a ratio of from 5% to 45% by weight to the whole weight of the resin coat layer. A two-component developer using the carrier is improved in the durability.

Abstract: The invention relates to a carrier and method of making a carrier in which elementary resin particles of volume average particle size not more than 0.5 m are fused on their surfaces to form secondary particles of BET surface areas of 5 to 150 m/g and volume average particle size of 1.5 to 5.0 m, which secondary particles are coated by a dry method on core particles to form carrier particles.

Abstract: An apparatus for producing an electrostatic image developer carrier from a material, comprising; a chamber for providing an enclosed space in which the material is processed, a stirrer for stirring the material in a horizontal direction in the chamber, and at least one of: a heater for heating up the chamber to a predetermined temperature, and a cooler for cooling down the chamber to a predetermined temperature.

Abstract: There is disclosed the method of preparing a carrier for developing a static latent image, wherein the carrier comprises a mixture of a core matrial and two or more kinds of the resin particles having different impact strengths. The method comprises applying an impact force repeatedly to said mixture to thereby fix the resin particles on the core material.

Abstract: A carrier for use in a developer for electro-photography, which comprises a core material and provided thereon in order, an intermediate resin layer and a layer for controlling triboelectric chargeability, said resin containing as a repeating unit a fluorinated alkylmethakrylarte unit, and a developer for electrophotography using the carrier and a positively chargeable toner is disclosed.