Abstract: The present invention provides a display element, which is driven at a low voltage, displays a high-contrast image with few density irregularities, and has improved image holding property. In a display element, which displays an image by moving, between a first and second substrate, particles having different colors and charge polarities by an electric field applied between the first and second substrates, the surface roughness of at least one of the substrates is 1 nm to 1 &mgr;m, the coefficient of shape is 100 to 140, the width and depth of the recessed part are not identical to the diameter of the particles and the contacting parts of the recessed part and the particles do not form a surface.

Abstract: A polymer compound contains a cyclic structure represented by the following general formula (1): 1

Abstract: An electrophotographic photoreceptor that can sufficiently prevent occurrence of filming, whereby defects on an image can be sufficiently prevented, and an electrophotographic process cartridge and an electrophotographic apparatus using the electrophotographic photoreceptor are to be provided. The electrophotographic photoreceptor contains an electroconductive substrate having provided thereon a photosensitive layer, and an outermost layer of the photosensitive layer has a dynamic hardness of about from 13.0×109 to 100.0×109 N/m2. According to the invention, occurrence of flaws on the surface of the photoreceptor can be sufficiently prevented, and cracking of a member made in contact with the photoreceptor can also be sufficiently prevented. Therefore, occurrence of filming is sufficiently prevented, and occurrence of defects on an image is also sufficiently prevented.

Abstract: In a film or panel having excellent near-infrared absorbability and excellent near-infrared shieldability, and having a high degree of visible ray transmittance and good color tone, in order to produce the near-infrared-absorbing film or panel having good color tone while the near-infrared-absorbing dye disposed therein is kept stable, the dye and the binder resin for the dye are specifically selected, and the production method is also specifically selected. In addition, for the purpose of producing the film or panel while the dye disposed therein is kept stable and for the purpose of making the film or panel have additional functions such as electromagnetic radiation absorbability, the film or panel is made to have a multi-layered structure.

Abstract: Provided are a process for producing a high-molecular-weight polycarbonate, which comprises polymerizing a diol and a carbonate diester through transesterification with heating in the presence of a basic oxide catalyst, and an electrophotographic photoreceptor containing this high-molecular-weight polycarbonate as a binder resin. This process can easily produce the high-molecular-weight polycarbonate safely without having an adverse effect on humans and environment. This electrophotographic photoreceptor can provide a high-quality image having a high stability at high speed over a long period of time.

Abstract: A polyester polymer includes a dicarboxylic acid or its ester-forming derivative and a dihydroxy compound, in which the dicarboxylic acid contains an alicyclic dicarboxylic acid and optionally an aromatic dicarboxylic acid, and the dihydroxy compound contains a compound of formula (1): ##STR1## wherein R.sub.1 represents a C.sub.1-4 alkylene group; and R.sub.2, R.sub.3, R.sub.4 and R.sub.5 each represents a hydrogen atom, a C.sub.1-4 alkyl group, an aryl group or an aralkyl group which may be the same or different. Also, polyester moldings of disc substrates, lenses, sheets, films, tubes or fibers are produced by molding the polyester polymer. The polyester polymer has excellent transparency, excellent heat resistance, extremely low optical anisotropy and excellent moldability.

Abstract: An air conditioning apparatus includes a compressor, an interior side heat exchanger, an exterior side heat exchanger, an expansion device provided between the interior side heat exchanger and the exterior side heat exchanger, a four-way valve provided between the compressor and the interior side heat exchanger and between the compressor and the exterior side heat exchanger, an oil separator provided between a delivery outlet of the compressor and the four-way valve, a first restrictor and a second restrictor provided between the oil separator and a suction inlet of the compressor, and an open-close valve provided between the second restrictor and the suction inlet of the compressor.

Abstract: Provided is a polyester from 9,9-bis[4-(2-hydroxyethoxy)phenyl]fluorenes as a diol component, and this novel polymer is excellent in transparency and heat resistance, has small optical anisotropy, is excellent in moldability, dimensional stability and chemical resistance and is industrially suitable for use in the fields of optical materials, fibers, films and sheets.

Abstract: A lateral DMOS FET device which has a small on resistance. The device includes a cell structure formed by a plurality of unit cells, each unit cell including: a source region of first conduction type formed on one side of a substrate of first conduction type; a channel region of second conduction type formed around the source region; and a plurality of drain contact regions of first conduction type located around the channel region; and a source electrode, a gate electrode, and a drain electrode, all of which are formed on the same one side of the substrate. Alternatively, each unit cell may includes: a drain contact region of first conduction type formed on one side of a substrate of first conduction type; a channel region of second conduction type formed around the drain contact region; and a plurality of source regions of first conduction type located around the channel region.

Abstract: A semiconductor device in which the breakdown voltages of the cell unit and the guard ring can easily be matched, and the surge endurance of the device can be improved. This semiconductor device includes a guard ring region surrounding the cell diffusion layers which is formed from an array of a plurality of guard ring cells, where each of the guard ring cells is identical to each of the cell diffusion layers and the guard ring cells are electrically connected mutually, so that the diffusion depths of each of the cells of the guard ring region and the cell diffusion layers are identical, and consequently the breakdown voltages for the guard ring region and the cell diffusion layers can be made equal to each other.

Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, in which a drain region is formed in the substrate, and a gate electrode is formed on the surface of the substrate via an insulating film formed thereon. A Schottky metal as a source region is formed in the surface of the substrate away from the drain region, the Schottky metal and the substrate constituting a Schottky junction at an interface therebetween near the gate electrode. A shield layer of a second conductivity type is interposed between the Schottky metal and the substrate except in the Schottky junction. The gate electrode controls tunnel current at the Schottky junction.

Abstract: A semiconductor device includes a semiconductor substrate as a drain region. A metal source region is located on a first surface of the substrate. The metal and the substrate constitute a Schottky junction. An insulated gate, including a gate electrode and an insulating film surrounding the gate electrode, is adjacent to the Schottky junction, such that angle formed by the Schottky junction and the insulated gate in the substrate is an acute angle. A part of the Schottky metal can be buried in the form of a pillar in the substrate, and a channel region of the Schottky junction can be formed on the pillar near the insulated gate.

Abstract: An input protector device for a semiconductor device such as a CMOS device, in which a first resistor is formed on an insulating film of a semiconductor substrate, and a second resistor is formed of an impurity diffusion region in the substrate, the first and second resistors and a capacitor being coupled to one another in series to constitute a filter circuit, and in which first and second diodes each cooperated with at least one of the first and second resistors, by-passing noises having low and high voltages, respectively, and a high frequency noise is cut by the filter circuit, thereby effectively preventing latchup.

Abstract: In order to improve latchup withstanding capability, a CMOS device is provided with at least one recombination layer which is buried in either or both substrate regions of a pMOS and a nMOS at such a position that a depletion layer formed at a pn junction between both substrate regions of the pMOS and nMOS does not reach the recombination layer. The recombination layer is a polycrystalline silicon or amorphous silicon layer having plentiful carrier recombination centers, or a layer having plentiful traps formed by ion implantation, or a layer of a compound semiconductor having a small band gap.

Abstract: A semiconductor device such as a CMOS is provided with highly doped polycrystalline silicon regions for preventing undesired operations of parasitic transistors. Each polycrystalline region is extended deeper from a top surface of the silicon chip than source and drain regions of MOS transistors. In a substrate region of each MOS, one polycrystalline region of the same conductivity type as the substrate region is formed near the source region, and connected with said source region so that the polycrystalline region is held equipotential with the source region.