Abstract: A solid-state imaging device 1 includes: a semiconductor substrate 11 on which pixels are placed like a matrix; and each of the pixels having a photoelectric conversion element 13 and a color filter layer 21 which is formed on the photoelectric conversion element 13. The solid-state imaging device 1 includes resin parts 20 which are formed at the boundaries of these photoelectric conversion devices 13 which are adjacent to each other, each of the resin parts 20 having an upward convex shape. Each color filter layer 21 of the device is formed so that the color filter layer covers the area ranging from the summit of a resin part to the summit of an adjacent resin part, and each color filter layer 21 is thinner in the peripheral part than in the center part around the summit.

Abstract: A solid-state imaging device 1 includes: a semiconductor substrate 11 on which pixels are placed like a matrix; and each of the pixels having a photoelectric conversion element 13 and a color filter layer 21 which is formed on the photoelectric conversion element 13. The solid-state imaging device 1 includes resin parts 20 which are formed at the boundaries of these photoelectric conversion devices 13 which are adjacent to each other, each of the resin parts 20 having an upward convex shape. Each color filter layer 21 of the device is formed so that the color filter layer covers the area ranging from the summit of a resin part to the summit of an adjacent resin part, and each color filter layer 21 is thinner in the peripheral part than in the center part around the summit.

Abstract: A solid-state imaging device 1 includes: a semiconductor substrate 11 on which pixels are placed like a matrix; and each of the pixels having a photoelectric conversion element 13 and a color filter layer 21 which is formed on the photoelectric conversion element 13. The solid-state imaging device 1 includes resin parts 20 which are formed at the boundaries of these photoelectric conversion devices 13 which are adjacent to each other, each of the resin parts 20 having an upward convex shape. Each color filter layer 21 of the device is formed so that the color filter layer covers the area ranging from the summit of a resin part to the summit of an adjacent resin part, and each color filter layer 21 is thinner in the peripheral part than in the center part around the summit.

Abstract: A solid state imaging device includes: a plurality of photoelectric conversion elements arranged in a matrix pattern on a semiconductor substrate; a wall portion provided above a region between the plurality of photoelectric conversion elements; and a plurality of color filter portions provided above the photoelectric conversion elements so as to fill openings surrounded by the wall portion. The wall portion is formed from a dye containing resist.

Abstract: A solid state imaging device comprises a plurality of pixels arranged in a matrix, each of the pixels including: a substrate; a photoelectric conversion element for converting light to electric charges; and a color filter formed on the photoelectric conversion element for color separation. The color filter is a layered color filter including a dye-contained color filter layer and a pigment-dispersed color filter layer formed on the dye-contained color filter layer, the dye-contained color filter layer and the pigment-dispersed color filter layer having the same hue.

Abstract: A solid-state imaging device includes: a semiconductor substrate; a plurality of photoelectric conversion elements that are arranged in a matrix form on the semiconductor substrate; and color filter layers of a plurality of colors that are formed in a predetermined pattern above the photoelectric conversion elements. A green color filter portion having a predetermined width is formed above a boundary region between each pair of adjacent ones of the photoelectric conversion elements so as to have a cross section of a mountain shape or a trapezoidal shape. Each of the color filter layers is formed between respective ridgelines of adjacent ones of the green color filter portions. Each of the color filter layers has a thickness that is smaller at a peripheral portion corresponding to a ridgeline portion than at a central portion.

Abstract: A solid-state imaging device 1 includes: a semiconductor substrate 11 on which pixels are placed like a matrix; and each of the pixels having a photoelectric conversion element 13 and a color filter layer 21 which is formed on the photoelectric conversion element 13. The solid-state imaging device 1 includes resin parts 20 which are formed at the boundaries of these photoelectric conversion devices 13 which are adjacent to each other, each of the resin parts 20 having an upward convex shape. Each color filter layer 21 of the device is formed so that the color filter layer covers the area ranging from the summit of a resin part to the summit of an adjacent resin part, and each color filter layer 21 is thinner in the peripheral part than in the center part around the summit.

Abstract: A solid-state imaging device 1 includes: a semiconductor substrate 11 on which pixels are placed like a matrix; and each of the pixels having a photoelectric conversion element 13 and a color filter layer 21 which is formed on the photoelectric conversion element 13. The solid-state imaging device 1 includes resin parts 20 which are formed at the boundaries of these photoelectric conversion devices 13 which are adjacent to each other, each of the resin parts 20 having an upward convex shape. Each color filter layer 21 of the device is formed so that the color filter layer covers the area ranging from the summit of a resin part to the summit of an adjacent resin part, and each color filter layer 21 is thinner in the peripheral part than in the center part around the summit.

Abstract: A solid-state imaging device includes: photoelectric transducers arranged in a matrix pattern on a substrate; and a plurality of color filter layers of different colors formed above the photoelectric transducers so as to correspond to the photoelectric transducers. One of the color filter layers of the color, which accounts for a largest area, is formed by two layers which are a bottom layer and a top layer of the color filter layers.

Abstract: A solid-state imaging device includes: a semiconductor substrate; a plurality of photoelectric conversion elements that are arranged in a matrix form on the semiconductor substrate; and color filter layers of a plurality of colors that are formed in a predetermined pattern above the photoelectric conversion elements. A green color filter portion having a predetermined width is formed above a boundary region between each pair of adjacent ones of the photoelectric conversion elements so as to have a cross section of a mountain shape or a trapezoidal shape. Each of the color filter layers is formed between respective ridgelines of adjacent ones of the green color filter portions. Each of the color filter layers has a thickness that is smaller at a peripheral portion corresponding to a ridgeline portion than at a central portion.

Abstract: In a solid-state imaging apparatus, a plurality of pixel units are arranged, the pixel units including (i) a photoelectric conversion element formed above a semiconductor substrate and (ii) a color filter layer formed above the photoelectric conversion element. In each color filter layer, the central part is formed thicker than the peripheral part.

Abstract: A solid state imaging device comprises a plurality of pixels arranged in a matrix, each of the pixels including: a substrate; a photoelectric conversion element for converting light to electric charges; and a color filter formed on the photoelectric conversion element for color separation. The color filter is a layered color filter including a dye-contained color filter layer and a pigment-dispersed color filter layer formed on the dye-contained color filter layer, the dye-contained color filter layer and the pigment-dispersed color filter layer having the same hue.

Abstract: An object of the present invention is to provide a solid-state imaging device which can improve color mixture from adjacent color filter layers, nonuniform tone of lines and sensitivity variations. A solid-state imaging device 1 includes: a semiconductor substrate 11 on which pixels are placed like a matrix; and each of the pixels having a photoelectric conversion element 13 and a color filter layer 21 which is formed on the photoelectric conversion element 13. The solid-state imaging device 1 includes resin parts 20 which are formed at the boundaries of these photoelectric conversion devices 13 which are adjacent to each other, each of the resin parts 20 having an upward convex shape. Each color filter layer 21 of the device is formed so that the color filter layer covers the area ranging from the summit of a resin part to the summit of an adjacent resin part, and each color filter layer 21 is thinner in the peripheral part than in the center part around the summit.

Abstract: In the solid-state imaging apparatus according to the present invention, a plurality of pixel units are arranged, said pixel units including (i) the photoelectric conversion element formed above the semiconductor substrate and (ii) the color filter layer formed above the photoelectric conversion element. And, in each color filter layer, the central part is formed thicker than the peripheral part.