Abstract: A multilayer electronic component having a plurality of laminated dielectric layers and inner electrode layers. The dielectric layers have a plurality of crystal grains including first regions where Re is dissolved in a solid state; and second regions where Re is not dissolved in the solid state. A median size of the crystal grains to an average thickness of the dielectric layers is 0.5?t?0.7. A ratio of a sum of cross sectional areas of the first regions to those of the plurality of crystal grains is 0.7?s?0.9. When a total amount of Ti, Zr, and Hf is 100 molar parts in the dielectric layers, a sum of the Zr and the Hf is 0?a?1.0; an amount b of Si is 0.1?b?1.0; an amount c of Re is 0.5?c?10.0; and a ratio m of a total of Ba and Re to a total of Ti, Zr, and Hf is 0.990?m?1.050.

Abstract: A multilayer electronic component having a plurality of laminated dielectric layers and inner electrode layers. The dielectric layers have a plurality of crystal grains including first regions where Re is dissolved in a solid state; and second regions where Re is not dissolved in the solid state. A median size of the crystal grains to an average thickness of the dielectric layers is 0.5?t?0.7. A ratio of a sum of cross sectional areas of the first regions to those of the plurality of crystal grains is 0.7?s?0.9. When a total amount of Ti, Zr, and Hf is 100 molar parts in the dielectric layers, a sum of the Zr and the Hf is 0?a?1.0; an amount b of Si is 0.1?b?1.0; an amount c of Re is 0.5?c?10.0; and a ratio m of a total of Ba and Re to a total of Ti, Zr, and Hf is 0.990?m?1.050.