Patents by Inventor Kenjiro Hayashi

Kenjiro Hayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11581445
    Abstract: An optical sensor includes a graphene layer, a first electrode and a second electrode that are connected to the graphene layer, and an enhancement layer. The enhancement layer is disposed below the graphene layer to enhance the intensity of an optical electric field by surface plasmon resonance. The first electrode and the second electrode are arranged parallel to a first direction. The intensity of the optical electric field enhanced by the enhancement layer is greater on a first electrode side than on a second electrode side with respect to a centerline in the first direction of the graphene layer.
    Type: Grant
    Filed: July 1, 2021
    Date of Patent: February 14, 2023
    Assignee: FUJITSU LIMITED
    Inventor: Kenjiro Hayashi
  • Patent number: 11329183
    Abstract: A photo detection element includes: a substrate; a light-receiving layer formed over the substrate, the light-receiving layer including graphene layers and spacer layers that are alternately stacked, light passing through each of the spacer layers, the spacer layers being made of insulating material; a first electrode that is in contact with the light-receiving layer; and a second electrode that is in contact with the light-receiving layer, a material of the second electrode being different from a material of the first electrode.
    Type: Grant
    Filed: October 15, 2019
    Date of Patent: May 10, 2022
    Assignee: FUJITSU LIMITED
    Inventors: Shintaro Sato, Hironori Nishino, Daiyu Kondo, Kenjiro Hayashi
  • Publication number: 20220140163
    Abstract: An optical sensor includes a graphene layer, a first electrode and a second electrode that are connected to the graphene layer, and an enhancement layer. The enhancement layer is disposed below the graphene layer to enhance the intensity of an optical electric field by surface plasmon resonance. The first electrode and the second electrode are arranged parallel to a first direction. The intensity of the optical electric field enhanced by the enhancement layer is greater on a first electrode side than on a second electrode side with respect to a centerline in the first direction of the graphene layer.
    Type: Application
    Filed: July 1, 2021
    Publication date: May 5, 2022
    Applicant: FUJITSU LIMITED
    Inventor: Kenjiro HAYASHI
  • Patent number: 11264417
    Abstract: A photo detection element includes: a substrate; a light-receiving layer formed over the substrate, the light-receiving layer including graphene layers that are stacked such that lattices of the graphene layers are randomly displaced from each other in plan view; a first electrode that is in contact with the light-receiving layer; and a second electrode that is in contact with the light-receiving layer, a material of the second electrode differing from a material of the first electrode.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: March 1, 2022
    Assignee: FUJITSU LIMITED
    Inventors: Shintaro Sato, Hironori Nishino, Daiyu Kondo, Kenjiro Hayashi
  • Patent number: 11156576
    Abstract: A gas sensor includes: a semiconductor layer; a graphene film provided above the semiconductor layer and having at least a portion in contact with gas; and a barrier film between the semiconductor layer and the graphene film.
    Type: Grant
    Filed: December 27, 2017
    Date of Patent: October 26, 2021
    Assignee: FUJITSU LIMITED
    Inventors: Naoki Harada, Shintaro Sato, Kenjiro Hayashi, Junichi Yamaguchi
  • Publication number: 20200152679
    Abstract: A photo detection element includes: a substrate; a light-receiving layer formed over the substrate, the light-receiving layer including graphene layers that are stacked such that lattices of the graphene layers are randomly displaced from each other in plan view; a first electrode that is in contact with the light-receiving layer; and a second electrode that is in contact with the light-receiving layer, a material of the second electrode differing from a material of the first electrode.
    Type: Application
    Filed: September 30, 2019
    Publication date: May 14, 2020
    Applicant: FUJITSU LIMITED
    Inventors: Shintaro SATO, Hironori Nishino, Daiyu Kondo, Kenjiro Hayashi
  • Publication number: 20200152817
    Abstract: A photo detection element includes: a substrate; a light-receiving layer formed over the substrate, the light-receiving layer including graphene layers and spacer layers that are alternately stacked, light passing through each of the spacer layers, the spacer layers being made of insulating material; a first electrode that is in contact with the light-receiving layer; and a second electrode that is in contact with the light-receiving layer, a material of the second electrode being different from a material of the first electrode.
    Type: Application
    Filed: October 15, 2019
    Publication date: May 14, 2020
    Applicant: FUJITSU LIMITED
    Inventors: Shintaro SATO, Hironori Nishino, Daiyu Kondo, Kenjiro HAYASHI
  • Publication number: 20180136157
    Abstract: A gas sensor includes: a semiconductor layer; a graphene film provided above the semiconductor layer and having at least a portion in contact with gas; and a barrier film between the semiconductor layer and the graphene film.
    Type: Application
    Filed: December 27, 2017
    Publication date: May 17, 2018
    Applicant: FUJITSU LIMITED
    Inventors: Naoki HARADA, Shintaro SATO, Kenjiro HAYASHI, Junichi YAMAGUCHI
  • Publication number: 20160221830
    Abstract: A method includes forming a first graphene film on a first substrate, applying a support film to the first graphene film, removing the first substrate to form a structure where the first graphene film is supported by the support film, forming a second graphene film on a second substrate, transferring the first graphene film supported by the support film onto the second graphene film formed on the second substrate to form a multilayer graphene film where the first graphene film and the second graphene film are stacked, removing the second substrate to form a structure where the multilayer graphene film is supported by the support film, transferring the multilayer graphene film onto a third substrate, and removing the support film to form a structure where the multilayer graphene film is formed on the third substrate.
    Type: Application
    Filed: April 8, 2016
    Publication date: August 4, 2016
    Applicant: FUJITSU LIMITED
    Inventor: Kenjiro HAYASHI
  • Patent number: 8975113
    Abstract: A catalyst film (2) is formed over a substrate (1). A graphene (3) is grown on the catalyst film (2). A gap through which a lower surface of the catalyst film (2) is exposed is formed. The catalyst film (2) is removed through the gap.
    Type: Grant
    Filed: December 24, 2013
    Date of Patent: March 10, 2015
    Assignee: Fujitsu Limited
    Inventors: Kenjiro Hayashi, Shintaro Sato
  • Publication number: 20140106514
    Abstract: A catalyst film (2) is formed over a substrate (1). A graphene (3) is grown on the catalyst film (2). A gap through which a lower surface of the catalyst film (2) is exposed is formed. The catalyst film (2) is removed through the gap.
    Type: Application
    Filed: December 24, 2013
    Publication date: April 17, 2014
    Applicant: FUJITSU LIMITED
    Inventors: Kenjiro HAYASHI, Shintaro Sato
  • Patent number: 8642410
    Abstract: A catalyst film (2) is formed over a substrate (1). A graphene (3) is grown on the catalyst film (2). A gap through which a lower surface of the catalyst film (2) is exposed is formed. The catalyst film (2) is removed through the gap.
    Type: Grant
    Filed: February 1, 2013
    Date of Patent: February 4, 2014
    Assignee: Fujitsu Limited
    Inventors: Kenjiro Hayashi, Shintaro Sato
  • Patent number: 5820742
    Abstract: An electrodeposition coating method characterized in that in electrodeposition coating of a water soluble composition of a polyimide precursor which is prepared by using 1,2,3,4-butanetetracarboxylic acid or its imide-forming derivative and a diamine and has a percentage of residual acid value of 30 to 3%, there is added previously a water soluble solvent selected from the group consisting of an alcoholic solvent, N-methyl-2-pyrrolidone, dimethylformamide and dimethylacetamide to the above-mentioned composition, and an electrodeposition coating agent used therefor. There can be provided the electrodeposition coating method practicable for the use of a water soluble polyimide composition which is capable of forming a uniform baked coating film having a continuous surface and being excellent in adhesivity to substrate and in toughness.
    Type: Grant
    Filed: May 23, 1996
    Date of Patent: October 13, 1998
    Assignee: Daikin Industries, Ltd.
    Inventors: Shin-i-ti Oda, Toshihide Okamoto, Hiroshi Yokota, Kenjiro Hayashi, Kazufumi Hamabuchi, Toshio Mizuno