Abstract: A film formation device (10) that increases the mechanical resistance of the liquid repellent film formed on the oxide film. The film formation device (10) includes an oxide film formation unit (14, 15, 16), which forms an oxidized film on a substrate by releasing grains towards the substrate that is rotated in a vacuum chamber (11), and forms an oxide film on the substrate by emitting oxygen plasma towards the oxidized film. A vapor deposition unit (17) vapor-deposits a silane coupling agent, which contains a hydrolytic polycondensation group and a liquid repellent group, on the oxide film. A polycondensation unit (20) polycondenses the silane coupling agent by supplying water towards the oxide film on the rotated substrate. The polycondensation unit supplies water to the oxide film before the vapor deposition unit vapor deposits the silane coupling agent on the oxide film.

Abstract: A film formation device (10) that increases the mechanical resistance of the liquid repellent film formed on the oxide film. The film formation device (10) includes an oxide film formation unit (14, 15, 16), which forms an oxidized film on a substrate by releasing grains towards the substrate that is rotated in a vacuum chamber (11), and forms an oxide film on the substrate by emitting oxygen plasma towards the oxidized film. A vapor deposition unit (17) vapor-deposits a silane coupling agent, which contains a hydrolytic polycondensation group and a liquid repellent group, on the oxide film. A polycondensation unit (20) polycondenses the silane coupling agent by supplying water towards the oxide film on the rotated substrate. The polycondensation unit supplies water to the oxide film before the vapor deposition unit vapor deposits the silane coupling agent on the oxide film.

Abstract: A film formation device (10) that increases the mechanical resistance of the liquid repellent film formed on the oxide film. The film formation device (10) includes an oxide film formation unit (14, 15, 16), which forms an oxidized film on a substrate by releasing grains towards the substrate that is rotated in a vacuum chamber (11), and forms an oxide film on the substrate by emitting oxygen plasma towards the oxidized film. A vapor deposition unit (17) vapor-deposits a silane coupling agent, which contains a hydrolytic polycondensation group and a liquid repellent group, on the oxide film. A polycondensation unit (20) polycondenses the silane coupling agent by supplying water towards the oxide film on the rotated substrate. The polycondensation unit supplies water to the oxide film before the vapor deposition unit vapor deposits the silane coupling agent on the oxide film.

Abstract: A vaporization source (20) that improve the usage efficiency of a film formation material (29) without adversely affecting the maintenance characteristics. The vaporization source (20) includes a single tubular peripheral wall (25) including a plurality of storage compartments (25S) and a plurality of partitions (27) partitioning the interior of the peripheral wall (25) into the plurality of storage compartments. The peripheral wall (25) includes a plurality of holes (28), with at least one hole provided for each of the storage compartments (25S). The plurality of holes (28) communicate the plurality of storage compartments with the exterior to vaporize the film formation material (29) stored in each of the plurality of storage compartments (25S) toward the exterior.