Patents by Inventor Kenjirou HATA

Kenjirou HATA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • FERROELECTRIC CRYSTAL FILM, ELECTRONIC COMPONENT, MANUFACTURING METHOD OF FERROELECTRIC CRYSTAL FILM, AND MANUFACTURING APPARATUS THEREFOR
    Publication number: 20180282896
    Abstract: There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production. A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.
    Type: Application
    Filed: June 1, 2018
    Publication date: October 4, 2018
    Applicants: YOUTEC CO., LTD., SAE Magnetics (H.K.) Ltd.
    Inventors: Takeshi KIJIMA, Yuuji HONDA, Daisuke IITSUKA, Kenjirou HATA
  • Ferroelectric crystal film, electronic component, manufacturing method of ferroelectric crystal film, and manufacturing apparatus therefor
    Patent number: 10017874
    Abstract: There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production. A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: July 10, 2018
    Assignees: YOUTEC CO., LTD., SAE MAGNETICS (H.K.) LTD.
    Inventors: Takeshi Kijima, Yuuji Honda, Daisuke Iitsuka, Kenjirou Hata
  • FERROELECTRIC CRYSTAL FILM, ELECTRONIC COMPONENT, MANUFACTURING METHOD OF FERROELECTRIC CRYSTAL FILM, AND MANUFACTURING APPARATUS THEREFOR
    Publication number: 20130323534
    Abstract: There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production. A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.
    Type: Application
    Filed: November 30, 2012
    Publication date: December 5, 2013
    Applicants: SAE MAGNETICS (H.K.) LTD., YOUTEC CO., LTD.
    Inventors: Takeshi KIJIMA, Yuuji HONDA, Daisuke IITSUKA, Kenjirou HATA