Abstract: A high-resolution and compact endoscopic apparatus is provided. The endoscopic apparatus comprises: an insertion unit configured to be inserted into a body cavity and guide light from an object; an illumination device attached to the insertion unit and illuminating the object; and an imaging device comprising 8K-level or higher-level pixels arranged in a matrix form. The imaging device receives light reflected from the object and guided through the insertion unit and outputs image data of the object. The pitch of the pixels of the imaging device is equal to or larger than the longest wavelength of illumination light emitted from the illumination means.

Abstract: Provided is an endoscope system wherein, when a trigger signal generating unit of an endoscope (10) generates a zoom-in or zoom-out trigger signal, a control device (40) identifies the fixation point of an operator in a display image of a display device (30) on the basis of a relationship between a detection signal from a sensor in polarized glasses (50) and a detection signal from a sensor in the display device (30) at the time of generation of the trigger signal, and zooms in or zooms out the peripheries of the fixation point.

Abstract: An endoscope device is provided to comprise an insertion unit configured to be inserted into a body cavity and guide light from an object, an illumination device attached to the insertion unit and illuminating the object, and an imaging device having an imaging element provided with 8K-level or higher-level pixels. The imaging element receives light reflected from the object and guided by the insertion unit and outputs imaging signals of the object. The insertion unit and the illumination device may be attached to the imaging device. The imaging device may be grasped and carried by a human hand. The imaging device has a mounting part incorporating the imaging element and a grasping part. The cross-sectional area of the mounting part perpendicular to an optical axis is equal to or larger than the cross-sectional area of the grasping part perpendicular to the optical axis.

Abstract: An X-ray sensor according to the present invention includes: a light-transmissive substrate (17); a light-transmissive electrode (21) formed on one surface of the light-transmissive substrate (17); and a photoconductive film (18) including a hole injection blocking layer (22), a field buffer layer (23), a hole trap layer (24), a photoconductive sensitive layer (25) having a charge-multiplying function, and an electron injection blocking layer (26), the layers being sequentially provided on the one surface of the light-transmissive substrate (17) having the light-transmissive electrode (21). The field buffer layer (23) is larger in thickness than a layer composed of the light-transmissive electrode (21) and the hole injection blocking layer (22).

Abstract: An X-ray image pickup tube converts a transmitted X-ray image into electric signals. The pickup tube includes a target structure having a fluorescent element, and a translucent conductive film for receiving a high voltage, with a photoconductive film laminated thereupon. The fluorescent element receives transmitted X rays in a two-dimensional distribution, and converts them into visible rays in a two-dimensional distribution. The translucnet conductive film is optically coupled to a surface of the fluorescent element opposite from an X-ray incident surface thereof. The photoconductive film includes an amorphors semiconductor layer which converts the visible rays transmitted in a two-dimensional distribution through the translucent conductive film, into electric charges in a two-dimensional distribution, and which multiplies the electric charges in the two-dimensional distribution based on electric fields formed by the high voltage applied to the translucent conductive film.

Abstract: A photoconductive target having a transparent electrode layer and a photoconductive layer on a transparent substrate is disposed opposite to a group of integrated electron beam emitters having gate electrodes. A number of the electron emitters are activated to apply electron beams to the photoconductive target and the activated ones of the electron beam emitters are temporally changed over by an electron emitter selector circuit and a gate selector circuit. Signal charge generated and stored in the photoconductive layer is read. A time-series electric signal corresponding to a spatial distribution of the incident light is generated. A thin imaging apparatus suitable for a larger area is thus provided.

Abstract: A two-dimensional radiation detector for obtaining a radiographic image as converted into electric signals. The detector has a multi-layer structure including a scintilator, a translucent electrode film, a photoconductive film and a scan switch layer. The scan switch layer includes conductors arranged in matrix form and in contact with the photoconductive film, a plurality of FETs corresponding to the conductors arranged in matrix form, and a uniformly planar conductor for successively applying a bias voltage through the FETs to the matrix conductors row by row. Each FET has a drain electrode connected to one of the matrix conductors, a source electrode connected to the uniformly planar conductor, and a gate electrode connected to the drive circuit. The translucent electrode film includes column conductors corresponding to columns of the matrix conductors, each of the column conductors being connected to a signal reading line.

Abstract: An image pickup tube is provided with the third electrode to control the potential of the region which is not scanned by an electron beam in the image pickup tube target section including a target electrode and a photo-conductive film. A method for operating this image pickup tube is also disclosed. Thus, undesired image phenomena which are generated when the image pickup tube is used with a relatively high target voltage, e.g., image distortion, shading, a waterfall phenomenon and image inversion phenomenon can be suppressed, thereby realizing a high sensitivity image pickup tube.

Abstract: A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property. In one aspect of the present invention, the amorphous semiconductor layer is amorphous Se. In another aspect of the present invention, the amorphous semiconductor layer is composed mainly of tetrahedral elements including at least an element of hydrogen or halogens. When using the amorphous semiconductor layer composed mainly of tetrahedral elements, the charge multiplication effect is produced mainly in the interior of the amorphous semiconductor, and thus it is possible to obtain a thermally stable photoconductive device having a high sensitivity while keeping a good photoresponse.

Abstract: An image pick-up apparatus is disclosed which includes a target portion having a photoconductive film on a substrate and a target electrode and reads video information converted into an electric signal in the photoconductive film by an electron beam. An insulating region is provided for the target portion such that carrier generated in an ineffective scanned region (a target region corresponding to an area not scanned by the electron beam) does not appear on a surface of the target portion.

Abstract: Disclosed is a photoelectric conversion device which comprises: a photoconductive layer made of amorphous semiconductor material which shows charge multiplication and which converts photo signals into electric signals; and a substrate having electric circuits or the like (for example switching elements) for reading the electric signals. The amorphous semiconductor material used according to the invention shows the charge multiplication action under predetermined intensity of electric field so that a high sensitive photoelectric conversion device having a gain which is not smaller than 1 is realized.

Abstract: An image pick-up tube and a method of fabricating an image pick-up tube and a target section used therewith, in which the target includes at least a conductive film and a photoconductive film on a substrate for photo-electric conversion, and a signal from the target section is read by an electron beam scanning system. At least a part of the surface area outside the effective scanning region of the electron beam scanning side of the target section is formed of a secondary electron emission dampening layer.

Abstract: A photoelectric conversion device using an amorphous material composed mainly of tetrahedral elements including at least an element of hydrogen and halogens as semiconductor material is disclosed. When a strong electric field is applied to a layer formed by using this amorphous semiconductor, a charge multiplication effect is produced mainly in the interior of the amorphous semiconductor and thus it is possible to obtain a thermally stable photoelectric conversion device having a high sensitivity while keeping a good photoresponse.

Abstract: A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

Abstract: A target of an image pickup tube is formed by laminating at least a transparent conductive film, an amorphous layer consisting essentially of silicon, and an amorphous layer consisting essentially of selenium in the above order on a light-transmitting substrate.

Abstract: A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

Abstract: A target of an image pickup tube, having a transparent substrate, a transparent conductive film, a p-type photoconductive film made mainly from amorphous Se, and an n-type conductive film capable of forming a rectifying contact at the interface with the p-type photoconductive film, using the rectifying contact as a reverse bias, characterized in that the p-type photoconductive film containing at least a region having more than 35%, and to 60% by weight of Te in the film thickness direction, and at least a region containing 0.005 to 5% by weight of at least a material capable of forming shallow levels in the amorphous Se in the film thickness direction, has good after-image characteristics even if operated at a high temperature.

Abstract: A structure of a photoconductive film related to a target of an image pickup tube of the photo conductivity type is disclosed. This photoconductive film is formed from mainly Se and Te is added in a central part thereof. Further, As, which is considered to form a deep trap level which captures electrons in Se and GaF.sub.3, etc. which form negative space charges by capturing electrons in Se are added in the region adjacent to the region where Te exists. In addition, a thickness of film in the region where GaF.sub.3, etc. exists is selected to be thinner (not smaller than 20 .ANG. and not larger than 90 .ANG.) than a value which has been adopted so far.

Abstract: A photoconductive image pick-up tube target comprises a transparent substrate, an N-type conductive film formed on the transparent substrate, and a P-type photoconductive film in rectifying contact with the N-type conductive film and containing Se, As and Te as sensitizer. The P-type photoconductive film includes a first layer contiguous to the N-type conductive film and containing 94.+-.1% by weight of Se and 6.+-.0.5% by weight of As, a second layer formed on the first layer and containing 64.+-.4% by weight of Se, 3.+-.0.5% by weight of As, and 33.+-.2% by weight of Te, a third layer formed on the second layer and containing Se and As, and a fluoride doped region extending over the first layer and a front half layer of the second layer and having a fluoride concentration of 0.1 to 3.0% by weight. The third layer has an As concentration which has a peak of 28.+-.1% by weight at a site contiguous to a rear half layer of the second layer and reduces gradually.

Abstract: A photoconductive film comprising a photo-conductive layer which is mainly made of selenium and a region added with tellurium in a direction of the thickness of the layer, wherein at least either one of a portion in a direction of hole flow of said region added with tellurium and a portion in the hole flow of another region which is located adjacent to said region added with tellurium is doped with at least one member selected from the group consisting of an oxide, a fluoride and elements which belong to the group II, III and VII, which are capable of forming a negative space charge in selenium, at a concentration in a range of 10 ppm to 1% by weight on an average. Typical examples of such oxide, fluoride and element include CuO, In.sub.2 O.sub.3, SeO.sub.2, V.sub.2 O.sub.5, MoO.sub.3, WO.sub.3, GaF.sub.2 InF.sub.3, Zn, Ga, In, Cl, I, Br and the like. The after image characteristic ascribable to incident light of high intensity can be significantly improved.