Patents by Inventor Kenko Tagushi

Kenko Tagushi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Avalanche photodiode
    Patent number: 4651187
    Abstract: An avalanche photodiode having a semiconducting light absorbing layer and an overlying avalanche gain layer of wide band-gap. The usual heavily doped region is formed in the avalanche gain region to form an abrupt p-n junction. Two semiconducting guard rings are formed around the heavily doped region. The doping of both rings provide graded p-n junctions with the avalanche gain layer. The inner guard ring extends more deeply into the avalanche gain layer than either the outer ring or the heavily doped region.
    Type: Grant
    Filed: March 19, 1985
    Date of Patent: March 17, 1987
    Assignee: NEC Corporation
    Inventors: Yoshimasa Sugimoto, Toshitaka Torikai, Kenko Tagushi