Abstract: A susceptor for use in a Czochralski crystal growing apparatus is disclosed wherein erosion of the susceptor is minimized. The susceptor contains ventilation holes that allow process gases found between the susceptor and crucible to escape. The crucible may incorporate the use of a protective coating over part or all of the susceptor, such as a silicon carbide coating. The ventilation holes are placed at various heights along the susceptor wall to allow ventilation near the area of plastic deformation of the crucible.

Abstract: A method is provided for cleaning deposits from a component of a semiconductor crystal growing furnace, where the furnace includes a hot zone and where the component is positioned outside the hot zone during the crystal growing process. The method typically includes providing the furnace including the component, removing the component from outside the hot zone, placing the component within the hot zone, and heating the hot zone to clean the component. The component may be virtually any furnace component, including a graphite chimney, purge tube, quartz window, or ceramic insulator.