Patents by Inventor Kenneth A. Bandy
Kenneth A. Bandy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10566446Abstract: Methods of improving hot carrier parameters in a field-effect transistor by hydrogen reduction. A gate structure of the field-effect transistor is formed on a substrate, and the substrate is heated inside a deposition chamber to a given process temperature for a given time period. After the time period concludes, a conformal layer is deposited at the given process temperature over the gate structure, and is subsequently etched to form sidewall spacers on the gate structure. After the sidewall spacers are formed, a capping layer is conformally deposited over the gate structure and the sidewall spacers, and cured with an ultraviolet light treatment. An interconnect structure may be formed over the field-effect transistor and the capping layer, and a moisture barrier layer may be formed over the interconnect structure. The moisture barrier layer is composed of a material that is permeable to hydrogen and impermeable to water molecules.Type: GrantFiled: May 30, 2018Date of Patent: February 18, 2020Assignee: GLOBALFOUNDRIES INC.Inventors: Yun-Yu Wang, Jochonia Nxumalo, Ahmad Katnani, Dimitrios Ioannou, Kenneth Bandy, Jeffrey Brown, Michael J. MacDonald
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Publication number: 20190371918Abstract: Methods of improving hot carrier parameters in a field-effect transistor by hydrogen reduction. A gate structure of the field-effect transistor is formed on a substrate, and the substrate is heated inside a deposition chamber to a given process temperature for a given time period. After the time period concludes, a conformal layer is deposited at the given process temperature over the gate structure, and is subsequently etched to form sidewall spacers on the gate structure. After the sidewall spacers are formed, a capping layer is conformally deposited over the gate structure and the sidewall spacers, and cured with an ultraviolet light treatment. An interconnect structure may be formed over the field-effect transistor and the capping layer, and a moisture barrier layer may be formed over the interconnect structure. The moisture barrier layer is composed of a material that is permeable to hydrogen and impermeable to water molecules.Type: ApplicationFiled: May 30, 2018Publication date: December 5, 2019Inventors: Yun-Yu Wang, Jochonia Nxumalo, Ahmad Katnani, Dimitrios Ioannou, Kenneth Bandy, Jeffrey Brown, Michael J. MacDonald
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Publication number: 20090008785Abstract: The embodiments of the invention generally relate to an etching process, and more particularly to an etch processing for improving the yield of dielectric contacts on nickel silicides. An oxygen-free feedgas is used in an etching process to reduce or eliminate residuals, including oxidation and consumption of the silicide layer, at the contact surface.Type: ApplicationFiled: February 7, 2008Publication date: January 8, 2009Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Scott D. ALLEN, Kenneth A. Bandy, Sadanand V. Deshpande, Richard Wise
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Patent number: 7354867Abstract: The embodiments of the invention generally relate to an etching process, and more particularly to an etch processing for improving the yield of dielectric contacts on nickel silicides. An oxygen-free feedgas is used in an etching process to reduce or eliminate residuals, including oxidation and consumption of the silicide layer, at the contact surface. The contact resistance at contact surface is reduced, thereby improving the performance of the device.Type: GrantFiled: February 3, 2005Date of Patent: April 8, 2008Assignee: International Business Machines CorporationInventors: Scott D. Allen, Kenneth A. Bandy, Sadanand V. Deshpande, Richard Wise
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Publication number: 20060172535Abstract: The embodiments of the invention generally relate to an etching process, and more particularly to an etch processing for improving the yield of dielectric contacts on nickel silicides. An oxygen-free feedgas is used in an etching process to reduce or eliminate residuals, including oxidation and consumption of the silicide layer, at the contact surface. The contact resistance at contact surface is reduced, thereby improving the performance of the device.Type: ApplicationFiled: February 3, 2005Publication date: August 3, 2006Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Scott Allen, Kenneth Bandy, Sadanand Deshpande, Richard Wise
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Patent number: 7060626Abstract: A method for forming a semiconductor wafer comprising of applying a first patterned resist to at least one first predetermined region of a wafer where said at least one first predetermined region of said wafer are protected by said first patterned resist and a first remaining portion of said wafer is not protected by said first patterned resist; etching said first remaining portion of said wafer not protected by said first pattern resist; stripping the first pattern resist from said wafer; applying a second patterned resist to at least one second pre-determined region of said wafer where said at least one second predetermined region of said wafer are protected by a second patterned resist and a second remaining portion is not protected by said second patterned resist; etching said second remaining portion not protected by said second patterned resist; and stripping said second patterned resist from said wafer.Type: GrantFiled: June 25, 2003Date of Patent: June 13, 2006Assignee: International Business Machines CorporationInventors: Kenneth A. Bandy, Vincent J. Carlos, Mark D. Levy, Sara L. Lucas, Timothy C. Milmore, Matthew C. Nicholls, Jason Nowakowski
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Publication number: 20040266202Abstract: A method for forming a semiconductor wafer comprising of applying a first patterned resist to at least one first predetermined region of a wafer where said at least one first predetermined region of said wafer are protected by said first patterned resist and a first remaining portion of said wafer is not protected by said first patterned resist; etching said first remaining portion of said wafer not protected by said first pattern resist; stripping the first pattern resist from said wafer; applying a second patterned resist to at least one second predetermined region of said wafer where said at least one second predetermined region of said wafer are protected by a second patterned resist and a second remaining portion is not protected by said second patterned resist; etching said second remaining portion not protected by said second patterned resist; and stripping said second patterned resist from said wafer.Type: ApplicationFiled: June 25, 2003Publication date: December 30, 2004Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Kenneth A. Bandy, Vincent J. Carlos, Mark D. Levy, Sara L. Lucas, Timothy C. Milmore, Matthew C. Nicholls, Jason Nowakowski
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Patent number: 6576507Abstract: The present invention is intended for use on BiCMOS technology where the BJTs are formed after the FETs. A thin FET protection layer 26 is deposited on the raised and recessed regions 28 of the semiconductor substrate 10. A selectively removable filler layer 30 is then deposited on the FET protection layer 26 with a thickness to over-fill the recessed regions 28 of the gates 24 of the FETs. The selectively removable filler layer 30 is then planarized until the FET protection layer 26 on top of the gates 24 is exposed. The recessed regions 28 between the gates 24 are left substantially filled with selectively removable filler layer 30. The selectively removable filler layer 30 in the region where the BJT is formed is patterned and an opening 32 is made to allow for the depositing of layers of different materials 34, 36, 38, 40, 42, 44 used in the construction of the BJT. The layer of different materials 34, 36, 38, 40, 42, 44 are processed by methods known in the art to form polysilicon emitter 46 of the BJT.Type: GrantFiled: November 14, 2000Date of Patent: June 10, 2003Assignee: International Business Machines CorporationInventors: Kenneth A. Bandy, Stuart D. Cheney, Gary L. Milo, Yutong Wu