Patents by Inventor Kenneth Andrew Jones

Kenneth Andrew Jones has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method using multiple layer annealing cap for fabricating group III-nitride semiconductor device structures and devices formed thereby
    Patent number: 7977224
    Abstract: A method of preventing the escape of nitrogen during the activation of ion implanted dopants in a Group III-nitride semiconductor compound without damaging the Group III-nitride semiconductor comprising: depositing a first layer of another Group III-nitride that acts as an adhesion layer; depositing a second layer of a Group III-nitride that acts as a mechanical supporting layer; said first and second layers forming an annealing cap to prevent the escape of the nitrogen component of the Group III-nitride semiconductor; annealing the Group III-nitride semiconductor at a temperature in the range of approximately 1100-1250° C.; and removing the first and second layers from the Group III-nitride semiconductor.
    Type: Grant
    Filed: December 3, 2008
    Date of Patent: July 12, 2011
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Carl Emmett Hager, IV, Michael Andrew Derenge, Kenneth Andrew Jones
  • Method Using Multiple Layer Annealing Cap for Fabricating Group III-Nitride Semiconductor Device Structures and Devices Formed Thereby
    Publication number: 20100133656
    Abstract: A method of preventing the escape of nitrogen during the activation of ion implanted dopants in a Group III-nitride semiconductor compound without damaging the Group III-nitride semiconductor comprising: depositing a first layer of another Group III-nitride that acts as an adhesion layer; depositing a second layer of a Group III-nitride that acts as a mechanical supporting layer; said first and second layers forming an annealing cap to prevent the escape of the nitrogen component of the Group III-nitride semiconductor; annealing the Group III-nitride semiconductor at a temperature in the range of approximately 1100-1250° C.; and removing the first and second layers from the Group III-nitride semiconductor.
    Type: Application
    Filed: December 3, 2008
    Publication date: June 3, 2010
    Applicant: United States Government as represented by the Secretary of the Army
    Inventors: CARL EMMETT HAGER, IV, MICHAEL ANDREW DERENGE, KENNETH ANDREW JONES