Abstract: A time division multiple access (TDMA) waveform for controlling a MIL-STD-188-183 compliant demand assignment multiple access (DAMA) satellite communication network contains a short duration and minimal data content, time-hack, that is repeatedly transmitted by a supervisory control radio, so that the time hack occurs twice within a DAMA frame, ensuring that every radio can acquire frame synchronization, irrespective of overlap in receipt of one of the time-hacks with a voice/data channel transmission by that radio. The time-hack also identifies which one among a list of different frame formats stored in the radio is to be employed.

Abstract: A time division multiple access (TDMA) waveform for controlling a MIL-STD-188-183 compliant demand assignment multiple access (DAMA) satellite communication network contains a short duration and minimal data content, time-hack, that is repeatedly transmitted by a supervisory control radio, so that the time hack occurs twice within a DAMA frame, ensuring that every radio can acquire frame synchronization, irrespective of overlap in receipt of one of the time-hacks with a voice/data channel transmission by that radio. The time-hack also identifies which one among a list of different frame formats stored in the radio is to be employed.

Abstract: A semiconductor device has a first conductor and a second conductor for fuse terminals. A fuse portion is disposed on a different level relative to both the first conductor and the second conductor. A first contact connects the fuse portion to the first conductor, and a second contact connects the fuse portion to the second conductor.

Abstract: A semiconductor device has a first conductor and a second conductor for fuse terminals. A fuse portion is disposed on a different level relative to both the first conductor and the second conductor. A first contact connects the fuse portion to the first conductor, and a second contact connects the fuse portion to the second conductor.

Abstract: A plurality of fuses of different types, each type of fuse serving a specific purpose are positioned on a semiconductor integrated circuit wafer, wherein activating one type of fuse does not incapacitate fuses of a different type. Fuses of the first type, e.g., laser activated fuses, are primarily used for repairing defects at the wafer level, whereas fuses of the second type, e.g., electrically activated fuses, are used for repairing defects found after mounting the IC chips on a module and stressing the module at burn-in test. Defects at the module level typically are single cell failures which are cured by the electrically programmed fuses to activate module level redundancies.