Abstract: A module for an automated biology laboratory system includes a housing and a storage device located within the housing. The storage device has a plurality of plate slots for receiving microplates or lab-ware with a microplate footprint or containers. The laboratory system further includes a transfer slot to transfer the microplates or containers between an inside of the module and an outside of the module; indexing means to facilitate alignment of the transfer slot with a microplate transfer interface comprising an aperture of the housing; and connection means for fixedly connecting the transfer interface of the module to a transfer interface of an adjacent module.

Abstract: A process module for a biology laboratory system includes a housing, a working deck located within the housing, having working deck plate slots for receiving cell culture plates, a liquid handling robot comprising at least one pipette for aspirating a liquid medium, and a first transfer interface in communication with a first storage module for storing cell culture plates. The working deck is movable to a plurality of working positions. In one of the positions, the cell culture plate is located under an operating point of the liquid handling robot. In another of the positions, the cell culture plate is in alignment with the first transfer interface for transfer of the cell culture plate between an outside of the housing and the working deck plate slot. The first transfer interface or a second interface can be brought in communication with a second storage module for storing lab-ware or liquid material.

Abstract: Biological cells, which are stored on carriers in a storage module, are cultivated in a process module. Each cell line is assigned an application containing a treatment specification, which contains one or more workflows that are performed in the process module at successive time intervals, each with a respective start time. Each workflow contains a work step or a plurality of work steps to be performed in succession. The control device controls the parallel execution of a plurality of applications and starts the one or more workflows of the different applications one after another in the same process module. In order to economically perform the workflows successively in a single process module, each workflow is assigned an effective function dependent on the start time, and the sequence and the start times of the workflows of different applications are determined by minimizing or maximizing the sum of the effective functions.

Abstract: A method and device for handling supports which support biological cell cultures or auxiliary agents for treatment of biological cell cultures, using one or more modules, at least one of which is a handling device. Each one of a plurality of supports rests with its edges on support elements, and, depending on the type of supports or the type of auxiliary means supported thereby, the supports require different storage heights, some of which are greater than one or more times a standardized vertical spacing of the support elements. The supports have an information carrier, the information of which can be read by a reading device and can be evaluated by a computing device. For optimal use of the compartments of the storage device, the information contains details about the storage height of the support in question and the handling of the supports is performed using these details.

Abstract: A two-dimensional layer is deposited onto a substrate in a CVD reactor, in which a process gas is fed into a process chamber. The process gas in the process chamber is brought to the substrate, and the substrate is heated to a process temperature. After a chemical reaction of the process gas, the layer forms on the surface. During or after the heating of the substrate to the process temperature, the process gas with a first mass flow rate is initially fed into the process chamber and then, while the substrate surface is being observed, the mass flow rate of the process gas is increased to a rate at which the layer growth begins, and subsequently the mass flow rate of the process gas is increased by a predetermined value, during which the layer is deposited. The beginning of the layer growth is identified by observing measurements from a pyrometer.

Abstract: A coating is deposited on a substrate in a CVD reactor that includes a process chamber and a gas inlet member with a first gas distribution chamber and a second gas distribution chamber separate from the first gas distribution chamber. To deposit heterostructures, in a first step, an inert or a diluent gas is fed into the first gas distribution chamber and a reactive gas containing the elements of a first coating is fed into the second gas distribution chamber. The reactive gas pyrolytically decomposes in the process chamber to form the first coating on the substrate. In a second step, a diluent gas is fed into the second gas distribution chamber and a reactive gas containing the elements of a second coating is fed into the first gas distribution chamber. The reactive gas or gas mixture decomposes in the process chamber to form the second coating on the substrate.

Abstract: A device can be used as an electrode for a lithium-ion battery. The device comprises an electrically conductive substrate to the surface of which nanofilaments having an ion-absorbing coating are applied. The nanofilaments are combined by the application of light into a plurality of bundles, each having multiple nanofilaments. A spacer gap is formed between neighboring bundles.

Abstract: A device can be used as an electrode for a lithium-ion battery. The device comprises an electrically conductive support, to the surface of which nanofilaments having an ion-absorbing coating are applied. The nanofilaments are combined by the application of light into a plurality of bundles, each having multiple nanofilaments. A spacer gap is formed between neighboring bundles.

Abstract: A method is employed to separate a carbon structure, which is disposed on a seed structure, from the seed structure. In the method, a carbon structure is deposited on the seed structure in a process chamber of a CVD reactor. The substrate comprising the seed structure (2) and the carbon structure (1) is heated to a process temperature. At least one etching gas is injected into the process chamber, the etching gas having the chemical formula AOmXn, AOmXnYp or AmXn, wherein A is selected from a group of elements that includes S, C and N, wherein O is oxygen, wherein X and Y are different halogens, and wherein m, n and p are natural numbers greater than zero. Through a chemical reaction with the etching gas, the seed structure is converted into a gaseous reaction product. A carrier gas flow is used to remove the gaseous reaction product from the process chamber.

Abstract: A device is provided for depositing carbonaceous structures, for example layers in the form of nanotubes or graphene on a substrate, which is supported by a substrate support disposed in a process chamber housing. A process gas can be delivered onto the substrate through gas outlet openings of a gas inlet element disposed in the process chamber housing. The process chamber housing has two opposing walls which each have holding recesses. At least one plate-shaped component is disposed in the process chamber housing. The plate-shaped component has two edge portions directed away from one another that each are inserted respectively in the holding recess of one of the two opposing walls.

Abstract: A method is employed to separate a carbon structure, which is disposed on a seed structure, from the seed structure. In the method, a carbon structure is deposited on the seed structure in a process chamber of a CND reactor. The substrate comprising the seed structure (2) and the carbon structure (1) is heated to a process temperature. At least one etching gas is injected into the process chamber, the etching gas having the chemical formula AOmXn, AOmXnYp or AmXn, wherein A is selected from a group of elements that includes S, C and N, wherein O is oxygen, wherein X and Y are different halogens, and wherein m, n and p are natural numbers greater than zero. Through a chemical reaction with the etching gas, the seed structure is converted into a gaseous reaction product. A carrier gas flow is used to remove the gaseous reaction product from the process chamber.

Abstract: Provided is a method of epitaxial deposition, which involves dry-etching a semiconductor substrate with a fluorine containing species and exposing the dry-etched substrate to hydrogen atoms, prior to epitaxially depositing a semiconductor layer to the surface of the substrate.

Abstract: A substrate carrier is configured to be arranged in a CVD or PVD reactor, in particular for the deposition of carbon nanotubes or graphene. The substrate carrier has a first broadside surface and a second broadside surface facing away from the first broad-side surface. The first broadside surface and the second broadside surface of the substrate carrier each have a substrate accommodation zone. Fastening elements are provided within each of the substrate accommodation zones to secure a substrate or sections of a substrate to one or more of the broadside surfaces. A CVD reactor is further configured to receive the substrate carrier.

Abstract: A device is provided for depositing carbonaceous structures, for example layers in the form of nanotubes or graphene on a substrate, which is supported by a substrate support disposed in a process chamber housing. A process gas can be delivered onto the substrate through gas outlet openings of a gas inlet element disposed in the process chamber housing. The process chamber housing has two opposing walls which each have holding recesses. At least one plate-shaped component is disposed in the process chamber housing. The plate-shaped component has two edge portions directed away from one another that each are inserted respectively in the holding recess of one of the two opposing walls.

Abstract: A plasma system for substrate processing comprising, a conducting electrode (b, bb) on which one or more substrates (d) can be held; a second conducting electrode (a) placed adjacent but separated from the substrate holding electrode on the side away from the side where the substrates are held; and a gas mixture distribution shower head (e) placed away from the conducting electrode on the side where the substrates are held for supplying the gas mixture (f) needed for processing the substrates in a uniform manner; such that a plasma configuration initiated and established, between the conducting electrode holding the substrates and the second conducting electrode envelops the electrode holding the substrate, is kept away from the shower head activating and distributing the gas mixture through orifices (ee) in the shower head, thereby providing the advantages of improved uniformity, yield and reliability of the process.

Abstract: A chemical vapor deposition (CVD) apparatus is configured for thermal gradient enhanced CVD operation by the inclusion of multiple heaters, positioned so as to provide a desired thermal gradient profile across a vertical dimension of a substrate or other work piece within the chamber. So configured, the chamber may also be used for controlled growth of thin films via diffusion through intermediate films, either top down or bottom parallel to the direction of the thermal gradient.