Abstract: A plasma-generation system is provided that includes a variable-frequency microwave generator configured to generate microwave power and a plasma applicator configured to use the microwave power from the microwave generator to (i) ignite a process gas therein for initiating a plasma in a plasma ignition process and (ii) maintain the plasma in a steady state process. The system also includes a coarse tuner connected between the microwave generator and the plasma applicator. At least one physical parameter of the coarse tuner is adapted to be set to achieve coarse impedance matching between the microwave generator and the plasma generated during both the plasma ignition process and the steady state process. A load impedance of the plasma generated during the plasma ignition process and the steady state process is adapted to vary. The microwave generator is configured to tune an operating frequency at the set physical parameter of the coarse tuner.

Abstract: A plasma-generation system is provided that includes a variable-frequency microwave generator configured to generate microwave power and a plasma applicator configured to use the microwave power from the microwave generator to (i) ignite a process gas therein for initiating a plasma in a plasma ignition process and (ii) maintain the plasma in a steady state process. The system also includes a coarse tuner connected between the microwave generator and the plasma applicator. At least one physical parameter of the coarse tuner is adapted to be set to achieve coarse impedance matching between the microwave generator and the plasma generated during both the plasma ignition process and the steady state process. A load impedance of the plasma generated during the plasma ignition process and the steady state process is adapted to vary. The microwave generator is configured to tune an operating frequency at the set physical parameter of the coarse tuner.

Abstract: A microwave system for use within a microwave-assisted thermal atomic layer deposition system is disclosed which include at least one microwave generator configured to output at least one microwave signal, at least one waveguide assembly in communication with the at least one microwave generator and configured to receive the microwave signal, one or more isolators positioned within the waveguide assembly and configured to reduce or eliminate backscatter of the microwave signal from the waveguide assembly to the at least one microwave generator, at least one tuning device in positioned within the waveguide assembly and configured receive the microwave signal from the isolator and tune the microwave signal, and at least one microwave delivery device in communication with the waveguide assembly and configured to direct at least a portion of the microwave signal into at least one processing chamber of the microwave-assisted thermal atomic layer deposition system.