Abstract: A latch includes three circuits. The first circuit drives a first output (QB) to a first level when a first input (D) and a first clock phase (CK) are both low, to a second level when D and CK are both high, and provides high impedance (HI-Z) when different logic levels are applied to D and CK. The second circuit drives a second output (Q) to the first level when a third input (DB) and a complimentary clock phase (CKB) are both low, to the second level when DB and CKB are both high, and provides HI-Z when different logic levels are applied to DB and CKB. The third circuit maintains voltages of Q and QB when the first and second circuits provide HI-Z at Q and QB. Odd-number dividers constructed with such latches produce 50% duty cycle operation without restricting output pulse widths to integer multiples of input periods.

Abstract: A differential amplifier, which has good linearity and noise performance, includes a first side that includes first, second, third, and fourth transistors and an inductor. The first and second transistors are coupled as a first cascode pair, and the third and fourth transistors are coupled as a second cascode pair. The third transistor has its gate coupled to the source of the second transistor, and the fourth transistor has its drain coupled to the drain of the second transistor. The first transistor provides signal amplification. The second transistor provides load isolation and generates an intermediate signal for the third transistor. The third transistor generates distortion components used to cancel third order distortion component generated by the first transistor. The inductor provides source degeneration for the first transistor and improves distortion cancellation. The sizes of the second and third transistors are selected to reduce gain loss and achieve good linearity for the amplifier.

Abstract: An amplifier, which has good linearity and noise performance, includes first, second, third, and fourth transistors and an inductor. The first and second transistors are coupled as a first cascode pair, and the third and fourth transistors are coupled as a second cascode pair. The third transistor has its gate coupled to the source of the second transistor, and the fourth transistor has its drain coupled to the drain of the second transistor. The first transistor provides signal amplification. The second transistor provides load isolation and generates an intermediate signal for the third transistor. The third transistor generates distortion components used to cancel third order distortion component generated by the first transistor. The inductor provides source degeneration for the first transistor and improves distortion cancellation. The sizes of the second and third transistors are selected to reduce gain loss and achieve good linearity for the amplifier.

Abstract: A variable impedance load (104) is provided at the output of a radio frequency (RF) driver amplifier (102) having a variable gain. In an exemplary embodiment, the variable load (104) comprises a resistor (R) in series with a semiconductor device (M1). The semiconductor device (M1) has an impedance level determined by a drive current. The value of the drive current is related to the gain of the RF driver amplifier (102).

Abstract: A radio frequency (RF) driver amplifier system and method that provides linear in decibel gain control is provided. The RF driver amplifier system comprises a linear transconductor receiving an input voltage and providing a controlled current based on input voltage received, temperature compensation circuitry for varying current from the linear transconductor according to absolute temperature, an exponential current controller receiving current varied according to temperature and providing an exponential current in response, and an inductive degeneration compensator receiving exponential current and providing a control current to driver amplifier circuitry, thereby compensating for inductive degeneration due to at least one inductor in the driver amplifier circuitry. Control current passes from the inductive degeneration compensator to the driver amplifier circuitry. Output gain from the driver amplifier circuitry varies linearly in decibels with respect to the input voltage.

Abstract: A wireless device is equipped with multiple (e.g., two) antennas, which may be of different designs. Each antenna interacts with the wireless environment in a different manner and achieves different scattering effect. The wireless device has one transmit signal path for each antenna. Each transmit signal path generates an RF output signal for transmission from the associated antenna. The wireless device controls the operation of one or more transmit signal paths to achieve a larger received signal level at a receiving base station. The wireless device may (1) autonomously adjust the transmit signal path(s) without relying on any feedback from the base station or (2) adjust the transmit signal path(s) based on transmit power control (TPC) commands received from the base station. The wireless device may selectively enable and disable each transmit signal path, vary the phase and/or gain of each transmit signal path, and so on.

Abstract: A radio frequency (RF) driver amplifier system and method that provides linear in decibel gain control is provided. The RF driver amplifier system comprises a linear transconductor receiving an input voltage and providing a controlled current based on input voltage received, temperature compensation circuitry for varying current from the linear transconductor according to absolute temperature, an exponential current controller receiving current varied according to temperature and providing an exponential current in response, and an inductive degeneration compensator receiving exponential current and providing a control current to driver amplifier circuitry, thereby compensating for inductive degeneration due to at least one inductor in the driver amplifier circuitry. Control current passes from the inductive degeneration compensator to the driver amplifier circuitry. Output gain from the driver amplifier circuitry varies linearly in decibels with respect to the input voltage.

Abstract: A radio frequency (RF) driver amplifier system and method that provides linear in decibel gain control is provided. The RF driver amplifier system comprises a linear transconductor receiving an input voltage and providing a controlled current based on input voltage received, temperature compensation circuitry for varying current from the linear transconductor according to absolute temperature, an exponential current controller receiving current varied according to temperature and providing an exponential current in response, and an inductive degeneration compensator receiving exponential current and providing a control current to driver amplifier circuitry, thereby compensating for inductive degeneration due to at least one inductor in the driver amplifier circuitry. Control current passes from the inductive degeneration compensator to the driver amplifier circuitry. Output gain from the driver amplifier circuitry varies linearly in decibels with respect to the input voltage.

Abstract: A radio frequency (RF) driver amplifier system and method that provides linear in decibel gain control is provided. The RF driver amplifier system comprises a linear transconductor receiving an input voltage and providing a controlled current based on input voltage received, temperature compensation circuitry for varying current from the linear transconductor according to absolute temperature, an exponential current controller receiving current varied according to temperature and providing an exponential current in response, and an inductive degeneration compensator receiving exponential current and providing a control current to driver amplifier circuitry, thereby compensating for inductive degeneration due to at least one inductor in the driver amplifier circuitry. Control current passes from the inductive degeneration compensator to the driver amplifier circuitry. Output gain from the driver amplifier circuitry varies linearly in decibels with respect to the input voltage.

Abstract: A variable impedance load (104) is provided at the output of a radio frequency (RF) driver amplifier (102) having a variable gain. In an exemplary embodiment, the variable load (104) comprises a resistor (R) in series with a semiconductor device (M1). The semiconductor device (M1) has an impedance level determined by a drive current. The value of the drive current is related to the gain of the RF driver amplifier (102).

Abstract: Apparatus is disclosed for interfacing a semiconductor test circuit and a semiconductor device under test, wherein the interface is a silicon structure test probe having conductor paths which extend along cantilevered parallelogram micro beams having contact bumps on the free ends of the beams arranged in a pattern which registers with a test pad pattern on the semiconductor device under test. The parallelogram beams provide test pad contact with substantially no scrubbing action. The silicon structure provides testing over wide environmental ranges because the test probe structure reacts to environmental conditions in the same way as the silicon semiconductor device under test. A method for fabricating the silicon structure test probe is disclosed which includes fabrication in the silicon structure of semiconductor circuit drivers and receivers for the conducting paths.

Abstract: A process for the production of a pressure sensitive adhesive comprising the interaction of a high molecular weight polyol, a polyisocyanate and a small amount of a bicyclic amide acetal wherein the process results in significant improvement in physical properties, e.g., a high degree of adhesive and cohesive strength, is described.