Patents by Inventor Kenneth BRANDMIER

Kenneth BRANDMIER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low-loss and fast acting solid-state breaker
    Patent number: 10985546
    Abstract: A circuit including a source, a load, and an isolation circuit for controllably isolating the load from the source. The isolation circuit is disposed between the source and the load. The isolation circuit includes at least one insulated-gate bipolar transistor (IGBT) and at least one gate turn-off thyristor (GTO) in parallel with the insulated-gate bipolar transistor. When no fault condition exists, the GTO is configured to be ON to couple the load to the source. When a fault condition exists, the at least one IGBT is configured to turn ON. After the at least one IGBT turns ON, the at least one GTO is configured to turn OFF. After a predetermined amount of time, reflecting the post fabrication alteration to the GTO's minority carrier lifetime (e.g. electron irradiation), after the at least one GTO turns OFF, the at least one IGBT is configured to turn OFF.
    Type: Grant
    Filed: January 20, 2019
    Date of Patent: April 20, 2021
    Assignee: Excelitas Technologies Corp.
    Inventors: John E. Waldron, Kenneth Brandmier, James K. Azotea
  • LOW-LOSS AND FAST ACTING SOLID-STATE BREAKER
    Publication number: 20190229519
    Abstract: A circuit including a source, a load, and an isolation circuit for controllably isolating the load from the source. The isolation circuit is disposed between the source and the load. The isolation circuit includes at least one insulated-gate bipolar transistor (IGBT) and at least one gate turn-off thyristor (GTO) in parallel with the insulated-gate bipolar transistor. When no fault condition exists, the GTO is configured to be ON to couple the load to the source. When a fault condition exists, the at least one IGBT is configured to turn ON. After the at least one IGBT turns ON, the at least one GTO is configured to turn OFF. After a predetermined amount of time, reflecting the post fabrication alteration to the GTO's minority carrier lifetime (e.g. electron irradiation), after the at least one GTO turns OFF, the at least one IGBT is configured to turn OFF.
    Type: Application
    Filed: January 20, 2019
    Publication date: July 25, 2019
    Inventors: John E. WALDRON, Kenneth BRANDMIER, James K. AZOTEA
  • Low-loss and fast acting solid-state breaker
    Patent number: 10193324
    Abstract: A circuit including a source, a load, and an isolation circuit for controllably isolating the load from the source. The isolation circuit is disposed between the source and the load. The isolation circuit includes at least one insulated-gate bipolar transistor (IGBT) and at least one gate turn-off thyristor (GTO) in parallel with the insulated-gate bipolar transistor. When no fault condition exists, the GTO is configured to be on to couple the load to the source. When a fault condition exists, the at least one IGBT is configured to turn on. After the at least one IGBT turns on, the at least one GTO is configured to turn off. After a predetermined amount of time after the at least one GTO turns off, the at least one IGBT is configured to turn off.
    Type: Grant
    Filed: January 8, 2016
    Date of Patent: January 29, 2019
    Assignee: Silicon Power Corporation
    Inventors: John E. Waldron, Kenneth Brandmier, James K. Azotea
  • Low-loss and fast acting solid-state breaker
    Patent number: 10193322
    Abstract: A circuit including a source, a load, and an isolation circuit for controllably isolating the load from the source. The isolation circuit is disposed between the source and the load. The isolation circuit includes at least one insulated-gate bipolar transistor (IGBT) and at least one gate turn-off thyristor (GTO) in parallel with the insulated-gate bipolar transistor. When no fault condition exists, the GTO is configured to be ON to couple the load to the source. When a fault condition exists, the at least one IGBT is configured to turn ON. After the at least one IGBT turns ON, the at least one GTO is configured to turn OFF. After a predetermined amount of time, reflecting the post fabrication alteration to the GTO's minority carrier lifetime (e.g. electron irradiation), after the at least one GTO turns OFF, the at least one IGBT is configured to turn OFF.
    Type: Grant
    Filed: November 8, 2016
    Date of Patent: January 29, 2019
    Assignee: Silicon Power Corporation
    Inventors: John E. Waldron, Kenneth Brandmier, James K. Azotea
  • Low-Loss and Fast Acting Solid-State Breaker
    Publication number: 20170141560
    Abstract: A circuit including a source, a load, and an isolation circuit for controllably isolating the load from the source. The isolation circuit is disposed between the source and the load. The isolation circuit includes at least one insulated-gate bipolar transistor (IGBT) and at least one gate turn-off thyristor (GTO) in parallel with the insulated-gate bipolar transistor. When no fault condition exists, the GTO is configured to be on to couple the load to the source. When a fault condition exists, the at least one IGBT is configured to turn on. After the at least one IGBT turns on, the at least one GTO is configured to turn off. After a predetermined amount of time after the at least one GTO turns off, the at least one IGBT is configured to turn off.
    Type: Application
    Filed: January 8, 2016
    Publication date: May 18, 2017
    Inventors: John E. Waldron, Kenneth Brandmier, James K. Azotea
  • LOW-LOSS AND FAST ACTING SOLID-STATE BREAKER
    Publication number: 20170141558
    Abstract: A circuit including a source, a load, and an isolation circuit for controllably isolating the load from the source. The isolation circuit is disposed between the source and the load. The isolation circuit includes at least one insulated-gate bipolar transistor (IGBT) and at least one gate turn-off thyristor (GTO) in parallel with the insulated-gate bipolar transistor. When no fault condition exists, the GTO is configured to be ON to couple the load to the source. When a fault condition exists, the at least one IGBT is configured to turn ON. After the at least one IGBT turns ON, the at least one GTO is configured to turn OFF. After a predetermined amount of time, reflecting the post fabrication alteration to the GTO's minority carrier lifetime (e.g. electron irradiation), after the at least one GTO turns OFF, the at least one IGBT is configured to turn OFF.
    Type: Application
    Filed: November 8, 2016
    Publication date: May 18, 2017
    Inventors: JOHN E. WALDRON, Kenneth BRANDMIER, James K. AZOTEA