Patents by Inventor Kenneth C. Cadien
Kenneth C. Cadien has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20020102922Abstract: Methods for the chemical-mechanical polishing (CMP) of copper layers on integrated circuits are described, along with the chemical compositions of various pre- and post-polishing solutions. In one embodiment, a pre-polish cleaning operation with a complexing organic acid buffer system is performed prior to the CMP of the copper. In alternative embodiments, a rinse operation is performed subsequent to the cleaning operation and prior to the CMP. In further alternatives, a post-polish cleaning operation with a chelating agent is performed. In still further alternatives, the pH of a pre-polish cleaner is ramped during the pre-polish cleaning operation to match the pH of the polish slurry which is used, subsequent to the cleaning operation, to remove excess portions of the copper layer to be polished.Type: ApplicationFiled: September 24, 2001Publication date: August 1, 2002Inventors: Anne E. Miller, A. Daniel Feller, Kenneth C. Cadien
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Publication number: 20020053656Abstract: The invention provides a chemical-mechanical polishing slurry comprising a liquid, cerium ions as an oxidizer, an abrasive, and a pH increasing substance. The cerium ions are in the liquid in a quantity equal to the inclusion of at least 0.02 molar ammonium cerium nitrate in the liquid. The abrasive is also included in the liquid. The liquid, the cerium ions and the abrasive jointly have a first pH value. The pH increasing substance increases the first pH value to a second pH value above 1.5.Type: ApplicationFiled: March 29, 1999Publication date: May 9, 2002Inventors: ANNE E. MILLER, A. DANIEL FELLER, KENNETH C. CADIEN
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Patent number: 6375552Abstract: Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitrate. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica an has a pH≦8. The third slurry can be used to polish titanium films.Type: GrantFiled: November 28, 2000Date of Patent: April 23, 2002Assignee: Intel CorporationInventors: Kenneth C. Cadien, Daniel A. Feller
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Patent number: 6358853Abstract: A ceria based abrasive is used in a chemical mechanical polishing operation at low polish pressure, and a predetermined pH range, to achieve high polish rates and good uniformity when planarizing layers formed from low dielectric constant materials, including but not limited to polymers. The distribution of ceria particle sizes in an exemplary slurry is bimodal and controlled. In a particular embodiment a polishing abrasive containing a controlled distribution of ceria particle sizes is used in a CMP polisher apparatus with a polishing pressure of approximately 3 psi and a pH of approximately 10.6 to planarize polymer films.Type: GrantFiled: September 10, 1998Date of Patent: March 19, 2002Assignee: Intel CorporationInventors: Kenneth C. Cadien, Allen D. Feller, Mark Buehler, Paul Fischer
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Publication number: 20020004317Abstract: A ceria based abrasive is used in a chemical mechanical polishing operation at low polish pressure, and a predetermined pH range, to achieve high polish rates and good uniformity when planarizing layers formed from low dielectric constant materials, including but not limited to polymers. The distribution of ceria particle sizes in an exemplary slurry is bimodal and controlled.Type: ApplicationFiled: September 10, 1998Publication date: January 10, 2002Inventors: KENNETH C. CADIEN, ALLEN D. FELLER, MARK BUEHLER, PAUL FISCHER
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Patent number: 6178585Abstract: Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitride. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica and has a pH≦8. The third slurry can be used to polish titanium films.Type: GrantFiled: February 16, 2000Date of Patent: January 30, 2001Assignee: Intel CorporationInventors: Kenneth C. Cadien, Daniel A. Feller
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Patent number: 6087733Abstract: A method and apparatus for compensating for the effects of nonuniform planarization in chemical-mechanical polishing (CMP) such as the erosion occurring from the removal of titanium nitride/tungsten films is disclosed. In the context of alignment marks, dummy marks are disposed on both sides of the actual alignment marks providing a similar feature density as the alignment marks. During the CMP, the dummy marks reside in the area of nonuniform erosion, leaving the actual marks in an area of uniform erosion. The present invention may also be used to control underlayer erosion variations in the high feature density device areas adjacent to the low feature density open areas by providing dummy features in the low feature density areas.Type: GrantFiled: June 12, 1998Date of Patent: July 11, 2000Assignee: Intel CorporationInventors: Michael A. Maxim, Michael Kocsis, Ning Hsieh, Matthew Prince, Kenneth C. Cadien
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Patent number: 6046099Abstract: Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitride. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica and has a pH.ltoreq.8. The third slurry can be used to polish titanium films.Type: GrantFiled: June 10, 1999Date of Patent: April 4, 2000Assignee: Intel CorporationInventors: Kenneth C. Cadien, Daniel A. Feller
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Patent number: 5954975Abstract: Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitride. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica and has a pH.ltoreq.8. The third slurry can be used to polish titanium films.Type: GrantFiled: February 7, 1997Date of Patent: September 21, 1999Assignee: Intel CorporationInventors: Kenneth C. Cadien, Daniel A. Feller
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Patent number: 5836806Abstract: Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitride. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica and has a pH.ltoreq.8. The third slurry can be used to polish titanium films.Type: GrantFiled: March 28, 1996Date of Patent: November 17, 1998Assignee: Intel CorporationInventors: Kenneth C. Cadien, Daniel A. Feller
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Patent number: 5783478Abstract: A novel, reliable, high performance MOS transistor with a composite gate electrode which is compatible with standard CMOS fabrication processes. The composite gate electrode comprises a polysilicon layer formed on a highly conductive layer. The composite gate electrode is formed on a gate insulating layer which is formed on a silicon substrate. A pair of source/drain regions are formed in the substrate and are self-aligned to the outside edges of the composite gate electrode.Type: GrantFiled: April 29, 1996Date of Patent: July 21, 1998Assignee: Intel CorporationInventors: Robert S. Chau, David B. Fraser, Kenneth C. Cadien, Gopal Raghavan, Leopoldo D. Yau
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Patent number: 5700383Abstract: Slurries and methods for the chemical mechanical polishing of thin films used in integrated circuit manufacturing are described. A first slurry comprises an oxidant, such as water, a halogen, such as fluorine, an abrasive, such as silica, and a chelating agent, such as citric acid, and has a pH between four and nine. The first slurry is ideal for the chemical mechanical polish of an aluminum film. Another slurry comprises an abrasive, such as silica, and an acid, such as citric acid, and has a pH of approximately three. The second slurry is ideal for the chemical mechanical polish of titanium aluminide and is compatible with the first slurry.Type: GrantFiled: December 21, 1995Date of Patent: December 23, 1997Assignee: Intel CorporationInventors: A. Daniel Feller, Kenneth C. Cadien
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Patent number: 5625217Abstract: A novel, reliable, high performance MOS transistor with a composite gate electrode which is compatible with standard CMOS fabrication processes. The composite gate electrode comprises a polysilicon layer formed on a highly conductive layer. The composite gate electrode is formed on a gate insulating layer which is formed on a silicon substrate. A pair of source/drain regions are formed in the substrate and are self-aligned to the outside edges of the composite gate electrode.Type: GrantFiled: February 2, 1995Date of Patent: April 29, 1997Assignee: Intel CorporationInventors: Robert S. Chau, David B. Fraser, Kenneth C. Cadien, Gopal Raghavan, Leopoldo D. Yau
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Patent number: 5611943Abstract: A method and apparatus for conditioning and/or rinsing a pad in a chemical-mechanical polisher. A scoring apparatus is rotated about its center directly over the polishing pad of the chemical-mechanical polisher. The scoring apparatus scores the pad surface while rotating above the pad. Consequently the pad is conditioned in a uniform and concentric fashion.Type: GrantFiled: September 29, 1995Date of Patent: March 18, 1997Assignee: Intel CorporationInventors: Kenneth C. Cadien, Leopoldo D. Yau
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Patent number: 5604158Abstract: A method of filling an opening in an insulating layer of an integrated circuit. First a tungsten-silicide layer is deposited over the opening. Next a tungsten layer is deposited onto the tungsten-silicide layer such that the opening is substantially filed with tungsten. The tungsten and tungsten-silicide layer are then chemically-mechanically polished back until the insulating layer is substantially revealed.Type: GrantFiled: April 16, 1996Date of Patent: February 18, 1997Assignee: Intel CorporationInventors: Kenneth C. Cadien, Srinivasam Sivaram
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Patent number: 5516346Abstract: Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitride. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica and has a pH.ltoreq.8. The third slurry can be used to polish titanium films.Type: GrantFiled: May 13, 1994Date of Patent: May 14, 1996Assignee: Intel CorporationInventors: Kenneth C. Cadien, Daniel A. Feller
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Patent number: 5407526Abstract: A method and apparatus for mixing and delivering a slurry polishing and etching a semiconductor device is described wherein the slurry chemicals are mixed at the point of use. An abrasive solution and a oxidant solution are stored in separate storage containers. When the polish/etch is to begin, each of the chemicals are pumped into a mixing chamber where they are mixed so as to form a slurry. The slurry is then immediately used to polish/etch a semiconductor device. Other chemicals may be added to the slurry during the polish/etch process so as to change the polish and/or the etch rate during the polish/etch process.Type: GrantFiled: June 30, 1993Date of Patent: April 18, 1995Assignee: Intel CorporationInventors: Donald D. Danielson, Allen D. Feller, Kenneth C. Cadien
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Patent number: 5340370Abstract: Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitride. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica and has a pH.ltoreq.8. The third slurry can be used to polish titanium films.Type: GrantFiled: November 3, 1993Date of Patent: August 23, 1994Assignee: Intel CorporationInventors: Kenneth C. Cadien, Daniel A. Feller