Patents by Inventor Kenneth C. Harvey

Kenneth C. Harvey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9997325
    Abstract: The present invention is directed to a gas line electron beam exciter, gas line electron beam excitation system and method for exciting a gas using an electron beam exciter. The electron beam exciter generally comprises a variable density electron source for generating a cloud of electrons in an electron chamber and a variable energy electron extractor for accelerating electrons from the electron chamber as an electron beam and into an effluent stream for fluorescing species in the effluent. The electron density of the electron beam is variably controlled by adjusting the excitation power applied to the variable density electron source. The electrons in the electron chamber reside at a reference electrical potential of the chamber, typically near ground electrical potential.
    Type: Grant
    Filed: July 16, 2009
    Date of Patent: June 12, 2018
    Assignees: Verity Instruments, Inc., Board of Regents, The University of Texas System
    Inventors: Jimmy W. Hosch, Matthew J. Goeckner, Mike Whelan, Andrew Weeks Kueny, Kenneth C. Harvey, P.L. Stephan Thamban
  • Patent number: 8125633
    Abstract: The present invention is directed to a system and method for radiometric calibration of spectroscopy equipment utilized in fault detection and process monitoring. Initially, a reference spectrograph is calibrated to a local primary standard (a calibrated light source with known spectral intensities and traceable to a reference standard). Other spectrographs are then calibrated from the reference spectrograph rather than the local primary calibration standard. This is accomplished by viewing a light source with both the reference spectrograph and the spectrograph to be calibrated. The output from the spectrograph to be calibrated is compared to the output of the reference spectrograph and then adjusted to match that output. The present calibration process can be performed in two stages, the first with the spectrographs calibrated to the reference spectrograph and then are fine tuned to a narrow band light source at the plasma chamber.
    Type: Grant
    Filed: May 6, 2008
    Date of Patent: February 28, 2012
    Assignee: Verity Instruments, Inc.
    Inventors: Mike Whelan, Andrew Weeks Kueny, Kenneth C. Harvey, John Douglas Corless
  • Publication number: 20100032587
    Abstract: The present invention is directed to a gas line electron beam exciter, gas line electron beam excitation system and method for exciting a gas using an electron beam exciter. The electron beam exciter generally comprises a variable density electron source for generating a cloud of electrons in an electron chamber and a variable energy electron extractor for accelerating electrons from the electron chamber as an electron beam and into an effluent stream for fluorescing species in the effluent. The electron density of the electron beam is variably controlled by adjusting the excitation power applied to the variable density electron source. The electrons in the electron chamber reside at a reference electrical potential of the chamber, typically near ground electrical potential.
    Type: Application
    Filed: July 16, 2009
    Publication date: February 11, 2010
    Inventors: Jimmy W. Hosch, Matthew J. Goeckner, Mike Whelan, Andrew Weeks Kueny, Kenneth C. Harvey, P.L. Stephan Thamban
  • Patent number: 7630859
    Abstract: The present invention is directed to a method and apparatus for reducing the effects of window clouding on a viewport window in a reactive environment. One or more clouded viewport windows are obtained for testing, in which the clouding results from exposure to the reactive environment. The clouding typically appears as a coating film on the test windows. The clouded viewport windows are analyzed for one or more spectral regions having good transmission. The threshold level of light transmission is determined by the particular application in which the window is used. The spectral regions of good transmission are evaluated for their usefulness with a particular algorithm that will use the spectral data in a production environment. Spectral regions that cannot be evaluated using the subject algorithm are eliminated from consideration. Spectral regions that can be evaluated using the subject algorithm and exhibit low absorption are selected for monitoring in the production environment.
    Type: Grant
    Filed: May 1, 2007
    Date of Patent: December 8, 2009
    Assignee: Verity Instruments, Inc.
    Inventor: Kenneth C. Harvey
  • Publication number: 20090103081
    Abstract: The present invention is directed to a system and method for radiometric calibration of spectroscopy equipment utilized in fault detection and process monitoring. Initially, a reference spectrograph is calibrated to a local primary standard (a calibrated light source with known spectral intensities and traceable to a reference standard). Other spectrographs are then calibrated from the reference spectrograph rather than the local primary calibration standard. This is accomplished by viewing a light source with both the reference spectrograph and the spectrograph to be calibrated. The output from the spectrograph to be calibrated is compared to the output of the reference spectrograph and then adjusted to match that output. The present calibration process can be performed in two stages, the first with the spectrographs calibrated to the reference spectrograph and then are fine tuned to a narrow band light source at the plasma chamber.
    Type: Application
    Filed: May 6, 2008
    Publication date: April 23, 2009
    Inventors: Mike Whelan, Andrew Weeks Kueny, Kenneth C. Harvey, John Douglas Corless
  • Publication number: 20080275658
    Abstract: The present invention is directed to a method and apparatus for reducing the effects of window clouding on a viewport window in a reactive environment. One or more clouded viewport windows are obtained for testing, in which the clouding results from exposure to the reactive environment. The clouding typically appears as a coating film on the test windows. The clouded viewport windows are analyzed for one or more spectral regions having good transmission. The threshold level of light transmission is determined by the particular application in which the window is used. The spectral regions of good transmission are evaluated for their usefulness with a particular algorithm that will use the spectral data in a production environment. Spectral regions that cannot be evaluated using the subject algorithm are eliminated from consideration. Spectral regions that can be evaluated using the subject algorithm and exhibit low absorption are selected for monitoring in the production environment.
    Type: Application
    Filed: May 1, 2007
    Publication date: November 6, 2008
    Inventor: Kenneth C. Harvey
  • Publication number: 20080233016
    Abstract: A multichannel array structure is provided and a mechanism for establishing a viscous flow within the multichannel array for preventing the flow of particulates (???material) that cause window clouding. A process chamber is provided for confining a process pressure within a process volume with a viewport window along the chamber for viewing at least a portion of the process volume. A ingress port is disposed in the process chamber, and to the process volume, for receiving a flow of process gas in the process volume and an egress port is disposed, and in the process chamber, to the process volume for extracting a flow rate of gas from the process volume. A multichannel array (MCA) is disposed between the viewport window and the process volume of the process chamber. The MCA has a plurality of channels, each of the channels having a diameter and a length. A window chamber is defined between the viewport window and MCA with a chamber window port for receiving gas into the chamber volume.
    Type: Application
    Filed: March 21, 2007
    Publication date: September 25, 2008
    Inventor: Kenneth C. Harvey
  • Patent number: 7339682
    Abstract: The present invention is directed to a heterodyne reflectometer system and method for obtaining highly accurate phase shift information from heterodyned optical signals, from which extremely accurate film depths can be calculated. A linearly polarized light comprised of two linearly polarized components that are orthogonal to each other, with split optical frequencies, is directed toward a film causing one of the optical polarization components to lag behind the other due to an increase in the optical path in the film for that component. A pair of detectors receives the beam reflected from the film layer and produces a measurement signal, and the beam prior to incidence on the film layer and generates a reference signal, respectively. The measurement signal and reference signal are analyzed by a phase detector for phase shift. The detected phase shift is then fed into a thickness calculator for film thickness results.
    Type: Grant
    Filed: February 25, 2005
    Date of Patent: March 4, 2008
    Assignee: Verity Instruments, Inc.
    Inventors: Arun Ananth Aiyer, Mark A. Meloni, Kenneth C. Harvey, Andrew Weeks Kueny
  • Patent number: 6830939
    Abstract: The present invention is directed to a system, method and software product for creating a predictive model of the endpoint of etch processes using Partial Least Squares Discriminant Analysis (PLS-DA). Calibration data is collected from a calibration wafer using optical emission spectroscopy (OES). The data may be non-periodic or periodic with time and periodic signals may be sampled synchronously or non-synchronously. The OES data is arranged in a spectra matrix X having one row for each data sample. The OES data is processed depending upon whether or not it is synchronous. Synchronous data is arranged in an unfolded spectra matrix X having one row for each period of data samples. A previewed endpoint signal is plotted using wavelengths known to exhibit good endpoint characteristics. Regions of stable intensity values in the endpoint plot that are associated with either the etch region or the post-etch region are identified by sample number.
    Type: Grant
    Filed: August 28, 2002
    Date of Patent: December 14, 2004
    Assignee: Verity Instruments, Inc.
    Inventors: Kenneth C. Harvey, Jimmy W. Hosch, Neal B. Gallagher, Barry M. Wise
  • Publication number: 20040045934
    Abstract: The present invention is directed to a system, method and software product for creating a predictive model of the endpoint of etch processes using Partial Least Squares Discriminant Analysis (PLS-DA). Calibration data is collected from a calibration wafer using optical emission spectroscopy (OES). The data may be non-periodic or periodic with time and periodic signals may be sampled synchronously or non-synchronously. The OES data is arranged in a spectra matrix X having one row for each data sample. The OES data is processed depending upon whether or not it is synchronous. Synchronous data is arranged in an unfolded spectra matrix X having one row for each period of data samples. A previewed endpoint signal is plotted using wavelengths known to exhibit good endpoint characteristics. Regions of stable intensity values in the endpoint plot that are associated with either the etch region or the post-etch region are identified by sample number.
    Type: Application
    Filed: August 28, 2002
    Publication date: March 11, 2004
    Inventors: Kenneth C. Harvey, Jimmy W. Hosch, Neal B. Gallagher, Barry M. Wise
  • Patent number: 6548999
    Abstract: A power meter includes components to measure RMS power over an 84 dB range or greater using the I-V square-law relation of a diode for measurements. The power meter includes multiple diodes along with a power distribution manifold which includes power dividers to distribute an input signal to the diodes. In one embodiment, a first power divider (202) distributes power to a first one of the diodes (203), and to the second power divider (204) which distributes power to the second (210) and third (212) diodes. The first power divider (202) is connected without attenuation to the first diode (203). The second power divider (204) is connected to the second diode (210) through a 11 dB attenuator (206), and to the third diode (212) through a 28 dB attenuator (208).
    Type: Grant
    Filed: August 17, 2001
    Date of Patent: April 15, 2003
    Assignee: Anritsu Company
    Inventors: Vincent W. C. Wong, William W. Oldfield, Kenneth C. Harvey
  • Patent number: 6331769
    Abstract: A power meter includes components to measure RMS power over an 84 dB range or greater using the I-V square-law relation of a diode for measurements. The power meter includes multiple diodes along with a power distribution manifold which includes power dividers to distribute an input signal to the diodes. In one embodiment, a first power divider (202) distributes power to a first one of the diodes (203), and to the second power divider (204) which distributes power to the second (210) and third (212) diodes. The first power divider (202) is connected without attenuation to the first diode (203). The second power divider (204) is connected to the second diode (210) through a 11 dB attenuator (206), and to the third diode (212) through a 28 dB attenuator (208).
    Type: Grant
    Filed: June 18, 1999
    Date of Patent: December 18, 2001
    Assignee: Anritsu Company
    Inventors: Vincent W. C. Wong, William W. Oldfield, Kenneth C. Harvey
  • Patent number: 6326274
    Abstract: A method of fabricating a semiconductor device wherein there is provided a semiconductor substrate, preferably of silicon, having a gate insulator thereover, preferably of silicon dioxide, forming a junction, preferably a silicon/silicon dioxide interface, and a gate electrode, preferably of doped polysilicon, over the partially fabricated device. Deuterium is implanted into the structure and the deuterium is caused to diffuse through the device. The device fabrication is then completed.
    Type: Grant
    Filed: February 15, 2001
    Date of Patent: December 4, 2001
    Assignee: Texas Instruments Incorporated
    Inventors: Timothy A. Rost, Kenneth C. Harvey
  • Patent number: 6291984
    Abstract: A dual mode power meter provides a first operation mode in the square law operating range of the diode, and a second mode in the square law region as well as the transition and linear operating ranges of the diode. The power meter includes multiple diodes. A manifold made up of power dividers distributes a signal input to the power meter to the diodes. A different attenuation is provided to each diode so that the square law operating range for each diode covers a different power range. By selecting the appropriate diode output for power measurements in the first mode, the overall square law operating range for the power meter will be greater than a power meter using a single diode. The power meter further includes a memory map of voltage vs. power in the square law, transition and linear regions of a diode measured for an unmodulated CW input for the second operation mode. The map of voltage vs.
    Type: Grant
    Filed: December 22, 1999
    Date of Patent: September 18, 2001
    Assignee: Anritsu Company
    Inventors: Vincent W. C. Wong, Chris Turl, William W. Oldfield, Kenneth C. Harvey
  • Publication number: 20010007785
    Abstract: A method of fabricating a semiconductor device wherein there is provided a semiconductor substrate, preferably of silicon, having a gate insulator thereover, preferably of silicon dioxide, forming a junction, preferably a silicon/silicon dioxide interface, and a gate electrode, preferably of doped polysilicon, over the partially fabricated device. Deuterium is implanted into the structure and the deuterium is caused to diffuse through the deivce. The device fabrication is then completed.
    Type: Application
    Filed: February 15, 2001
    Publication date: July 12, 2001
    Inventors: Timothy A. Rost, Kenneth C. Harvey
  • Patent number: 6221705
    Abstract: A method of fabricating a semiconductor device wherein there is provided a semiconductor substrate, preferably of silicon, having a gate insulator thereover, preferably of silicon dioxide, forming a junction, preferably a silicon/silicon dioxide interface, and a gate electrode, preferably of doped polysilicon, over the partially fabricated device. Deuterium is implanted into the structure and the deuterium is caused to diffuse through the deivce. The device fabrication is then completed.
    Type: Grant
    Filed: July 28, 1998
    Date of Patent: April 24, 2001
    Assignee: Texas Instruments Incorporated
    Inventors: Timothy A. Rost, Kenneth C. Harvey
  • Patent number: 6071751
    Abstract: Channel-hot-carrier reliability can be improved by deuterium sintering. However, the benefits obtained by deuterium sintering can be greatly reduced or destroyed by thermal processing steps which break Si--H and Si--D bonds. A solution is to increase the deuterium concentration near the interface to avoid subsequent depletion of deuterium due to diffusion. By using a rapid quench of a sintered wafer, the deuterium concentration near the interface is increased, because the rapid quench impedes the ability of the deuterium to diffuse away from the gate oxide interface.
    Type: Grant
    Filed: July 28, 1998
    Date of Patent: June 6, 2000
    Assignee: Texas Instruments Incorporated
    Inventors: Robert M. Wallace, Kenneth C. Harvey
  • Patent number: 6017806
    Abstract: A method of fabricating a semiconductor device wherein there is provided a partially fabricated semiconductor device having a Si/SiO.sub.2 interface in which all processing steps involving heating of the device to a temperature above the Si-hydrogen dissociation temperature for a sufficient time to cause at least substantial dissociation of hydrogen from silicon have been completed. The device is immersed in a deuterium ambient for a sufficient time to permit the device structure in the region of the Si/SiO.sub.2 interface to have an excess of deuterium atoms. The device is then heated to a temperature above the dissociation temperature of hydrogen-silicon bonds for a time sufficient to cause substantial dissociation of hydrogen and/or deuterium from Si in the region of the Si/SiO.sub.2 interface while the deuterium remains in the device structure at the Si and SiO.sub.2 interface.
    Type: Grant
    Filed: July 28, 1998
    Date of Patent: January 25, 2000
    Assignee: Texas Instruments Incorporated
    Inventor: Kenneth C. Harvey
  • Patent number: 4555122
    Abstract: A novel scooter-like device enables the user to employ body movements similar to those used in skiing to cause the vehicle to traverse hills, including grass-covered slopes, through pivotally, longitudinally and arcuately slidably linking angular movement of the front locomotion mechanism relative to the longitudinal axis of a fixed central platform to the rear locomotion mechanism in tracking relationship, and in a region under the central portion of the platform.
    Type: Grant
    Filed: November 17, 1982
    Date of Patent: November 26, 1985
    Inventor: Kenneth C. Harvey