Patents by Inventor Kenneth C. Wu
Kenneth C. Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240094233Abstract: The present invention relates to methods, devices and systems for associating consumable data with an assay consumable used in a biological assay. Provided are assay systems and associated consumables, wherein the assay system adjusts one or more steps of an assay protocol based on consumable data specific for that consumable. Various types of consumable data are described, as well as methods of using such data in the conduct of an assay by an assay system. The present invention also relates to consumables (e.g., kits and reagent containers), software, data deployable bundles, computer-readable media, loading carts, instruments, systems, and methods, for performing automated biological assays.Type: ApplicationFiled: July 18, 2023Publication date: March 21, 2024Inventors: Jacob N. WOHLSTADTER, Manish KOCHAR, Peter J. BOSCO, Ian D. CHAMBERLIN, Bandele JEFFREY-COKER, Eric M. JONES, Gary I. KRIVOY, Don E. KRUEGER, Aaron H. LEIMKUEHLER, Pei-Ming WU, Kim-Xuan NGUYEN, Pankaj OBEROI, Louis W. PANG, Jennifer PARKER, Victor PELLICIER, Nicholas SAMMONS, George SIGAL, Michael L. VOCK, Stanley T. SMITH, Carl C. STEVENS, Rodger D. OSBORNE, Kenneth E. PAGE, Michael T. WADE, Jon WILLOUGHBY, Lei WANG, Xinri CONG, Kin NG
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Patent number: 7227176Abstract: A semiconductor structure including a uniform etch-stop layer. The uniform etch stop layer has a relative etch rate which is less than approximately the relative etch rate of Si doped with 7×1019 boron atoms/cm3. A method for forming a semiconductor structure includes forming a uniform etch-stop layer providing a handle wafer, and bonding the uniform etch-stop layer to the handle wafer. The uniform etch-stop layer has a relative etch rate which is less than approximately the relative etch rate of Si doped with 7×1019 boron atoms/cm3.Type: GrantFiled: June 25, 2003Date of Patent: June 5, 2007Assignees: Massachusetts Institute of Technology, The Charles Stark Draper Laboratory, Inc.Inventors: Kenneth C. Wu, Eugene A. Fitzgerald, Gianni Taraschi, Jeffrey T. Borenstein
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Patent number: 6689211Abstract: A SiGe monocrystalline etch-stop material system on a monocrystalline silicon substrate. The etch-stop material system can vary in exact composition, but is a doped or undoped Si1−xGex alloy with x generally between 0.2 and 0.5. Across its thickness, the etch-stop material itself is uniform in composition. The etch stop is used for micromachining by aqueous anisotropic etchants of silicon such as potassium hydroxide, sodium hydroxide, lithium hydroxide, ethylenediamine/pyrocatechol/pyrazine (EDP), TMAH, and hydrazine. These solutions generally etch any silicon containing less than 7×1019 cm−3 of boron or undoped Si1−xGex alloys with x less than approximately 18. Alloying silicon with moderate concentrations of germanium leads to excellent etch selectivities, i.e., differences in etch rate versus pure undoped silicon. This is attributed to the change in energy band structure by the addition of germanium.Type: GrantFiled: June 22, 2000Date of Patent: February 10, 2004Assignee: Massachusetts Institute of TechnologyInventors: Kenneth C. Wu, Eugene A. Fitzgerald, Jeffrey T. Borenstein, Gianna Taraschi
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Publication number: 20040000268Abstract: A SiGe monocrystalline etch-stop material system on a monocrystalline silicon substrate. The etch-stop material system can vary in exact composition, but is a doped or undoped Si1-xGex alloy with x generally between 0.2 and 0.5. Across its thickness, the etch-stop material itself is uniform in composition. The etch stop is used for micromachining by aqueous anisotropic etchants of silicon such as potassium hydroxide, sodium hydroxide, lithium hydroxide, ethylenediamine/pyrocatechol/pyrazine (EDP), TMAH, and hydrazine. These solutions generally etch any silicon containing less than 7×1019 cm−3 of boron or undoped Si1-xGex alloys with x less than approximately 18. Alloying silicon with moderate concentrations of germanium leads to excellent etch selectivities, i.e., differences in etch rate versus pure undoped silicon. This is attributed to the change in energy band structure by the addition of germanium.Type: ApplicationFiled: June 25, 2003Publication date: January 1, 2004Applicant: Massachusetts Institute of TechnologyInventors: Kenneth C. Wu, Eugene A. Fitzgerald, Gianni Taraschi, Jeffrey T. Borenstein
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Patent number: 6521041Abstract: A SiGe monocrystalline etch-stop material system on a monocrystalline silicon substrate. The etch-stop material system can vary in exact composition, but is a doped or undoped Si1−xGex alloy with x generally between 0.2 and 0.5. Across its thickness, the etch-stop material itself is uniform in composition. The etch stop is used for micromachining by aqueous anisotropic etchants of silicon such as potassium hydroxide, sodium hydroxide, lithium hydroxide, ethylenediamine/pyrocatechol/pyrazine (EDP), TMAH, and hydrazine. For example, a cantilever can be made of this etch-stop material system, then released from its substrate and surrounding material, i.e., “micromachined”, by exposure to one of these etchants. These solutions generally etch any silicon containing less than 7×1019 cm−3 of boron or undoped Si1−xGex alloys with x less than approximately 18. Alloying silicon with moderate concentrations of germanium leads to excellent etch selectivities, i.e.Type: GrantFiled: April 9, 1999Date of Patent: February 18, 2003Assignee: Massachusetts Institute of TechnologyInventors: Kenneth C. Wu, Eugene A. Fitzgerald, Jeffrey T. Borenstein
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Publication number: 20010003269Abstract: A SiGe monocrystalline etch-stop material system on a monocrystalline silicon substrate. The etch-stop material system can vary in exact composition, but is a doped or undoped Si1−xGex alloy with x generally between 0.2 and 0.5. Across its thickness, the etch-stop material itself is uniform in composition. The etch stop is used for micromachining by aqueous anisotropic etchants of silicon such as potassium hydroxide, sodium hydroxide, lithium hydroxide, ethylenediamine/pyrocatechol/pyrazine (EDP), TMAH, and hydrazine. For example, a cantilever can be made of this etch-stop material system, then released from its substrate and surrounding material, i.e., “micromachined”, by exposure to one of these etchants. These solutions generally etch any silicon containing less than 7×1019 cm−3 of boron or undoped Si1−xGex alloys with x less than approximately 18. Alloying silicon with moderate concentrations of germanium leads to excellent etch selectivities, i.e.Type: ApplicationFiled: April 9, 1999Publication date: June 14, 2001Inventors: KENNETH C. WU, EUGENE A. FITZGERALD, JEFFREY T. BORENSTEIN