Abstract: Image sensors are provided that reduce conflicts between different sensor functions because sensor structures do not demand access to the same internal spaces. Accordingly, sensor structures can be independently arranged to enhance their respective functions. In particular, sensor embodiments include a substrate, semiconductor devices and an interconnect structure carried over the substrate, reference and sense electrodes and a photoconductive medium that are carried over the interconnect structure, and vias that couple the reference and sense electrodes to the interconnect structure and semiconductor devices. Different sensor elements do not demand access through the same internal VLSI spaces and may thus be arranged to enhance their respective sensor functions. In addition, sensors of the invention will respond to radiation rays that are orthogonal to the sensor's upper face and also to radiation rays that are tilted from this relationship.

Abstract: Static read/write memory structures are provided that include predetermined latent-state patterns which can be retrieved with a latent-state retrieve process that differs somewhat from a conventional write process. The patterns are realized with threshold-voltage differences and they significantly enhance flexibility of memory allocation without increasing memory area nor significantly altering conventional read/write processes.