Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

Abstract: A kit for a batting tee includes a ball holder including a first prong and a second prong, the first prong at a first distal end of the ball holder and including a first recess, the second prong at the first distal end of the ball holder and including a second recess. The ball holder further includes a holder connector disposed at a second distal end of the ball holder, the second distal end of the ball holder opposing the first distal end of the ball holder, the first prong and the second prong extending from the holder connector in a planar fashion with each other. The kit includes a shaft including a first distal end to be attached to the holder connector, and a base including a top surface, the top surface including a mount to which a second distal end of the shaft is to be mounted.

Abstract: A kit for a batting tee includes a ball holder including a first prong and a second prong, the first prong at a first distal end of the ball holder and including a first recess, the second prong at the first distal end of the ball holder and including a second recess. The ball holder further includes a holder connector disposed at a second distal end of the ball holder, the second distal end of the ball holder opposing the first distal end of the ball holder, the first prong and the second prong extending from the holder connector in a planar fashion with each other. The kit includes a shaft including a first distal end to be attached to the holder connector, and a base including a top surface, the top surface including a mount to which a second distal end of the shaft is to be mounted.

Abstract: A kit for a batting tee includes a ball holder including a first prong and a second prong, the first prong at a first distal end of the ball holder and including a first recess, the second prong at the first distal end of the ball holder and including a second recess. The ball holder further includes a holder connector disposed at a second distal end of the ball holder, the second distal end of the ball holder opposing the first distal end of the ball holder, the first prong and the second prong extending from the holder connector in a planar fashion with each other. The kit includes a shaft including a first distal end to be attached to the holder connector, and a base including a top surface, the top surface including a mount to which a second distal end of the shaft is to be mounted.

Abstract: A tamper-evident package includes a flexible web having first and second opposed surfaces, and a tamper-evident layer on at least the first surface. The tamper-evident layer defines a blank space on the web, and includes a first pattern of protected areas and a second pattern of tamper-evident areas. A first semi-rigid outer layer is attached to the first tamper-evident layer so as to adhere only to the tamper-evident areas on the tamper-evident layer, the first semi-rigid outer layer including a transparent portion aligned with the blank space. A second semi-rigid outer layer is attached to the second surface of the web. The blank space may be removed to form a hole in the web, and the second outer layer may include a transparent portion aligned with the hole. A second tamper-evident layer may optionally be provided on the second surface of the web.

Abstract: A tamper-evident package includes a flexible web having first and second opposed surfaces, and a tamper-evident layer on at least the first surface. The tamper-evident layer defines a blank space on the web, and includes a first pattern of protected areas and a second pattern of tamper-evident areas. A first semi-rigid outer layer is attached to the first tamper-evident layer so as to adhere only to the tamper-evident areas on the tamper-evident layer, the first semi-rigid outer layer including a transparent portion aligned with the blank space. A second semi-rigid outer layer is attached to the second surface of the web. The blank space may be removed to form a hole in the web, and the second outer layer may include a transparent portion aligned with the hole. A second tamper-evident layer may optionally be provided on the second surface of the web.

Abstract: A plasma processing apparatus and method to control a temperature of a chamber component therein. A process chamber may include a temperature controlled chamber component and at least one remote heat transfer fluid loop comprising a first heat exchanger having a primary side in fluid communication with a heat sink or heat source, and a local heat transfer fluid loop placing the chamber component in fluid communication with a secondary side of the first heat exchanger. The local loop may be of significantly smaller fluid volume than the remote loop(s) and circulated to provide thermal load of uniform temperature. Temperature control of heat transfer fluid in the local loop and temperature control of the chamber component may be implemented with a cascaded control algorithm.

Abstract: A tunable gas flow equalizer is described. In an embodiment, the tunable flow equalizer includes a gas flow equalizer plate having primary opening and a secondary opening. The primary opening may surround a substrate support, and the secondary opening may be configured with a tuner. In an embodiment, the substrate support may be vertically adjustable with respect to the gas flow equalizer plate. The flow uniformity may be fine tuned by adjusting a tuner configured with a secondary opening in the gas flow equalizer plate and/or by adjusting the height of a vertically positionable substrate support plate having an inwardly tapered skirt 528 with respect to the gas flow equalizer plate 520.

Abstract: A tunable gas flow equalizer is described. In an embodiment, the tunable flow equalizer includes a gas flow equalizer plate having primary opening and a secondary opening. The primary opening may surround a substrate support, and the secondary opening may be configured with a tuner. In an embodiment, the substrate support may be vertically adjustable with respect to the gas flow equalizer plate. The flow uniformity may be fine tuned by adjusting a tuner configured with a secondary opening in the gas flow equalizer plate and/or by adjusting the height of a vertically positionable substrate support plate having an inwardly tapered skirt 528 with respect to the gas flow equalizer plate 520.

Abstract: The “All Natural Oil Spray” makes cleaning litter boxes easier then before. It prevents most pet waste from sticking to litter boxes. It saves time, eliminating scraping & chiseling pet waste. No more cleaning, after torn plastic liner bags, due to pet claws, causing pet waste & litter to leak. It is affordable saving you money, no more buying liner bags. No more paying to replace litter boxes, due to scraping damage. It saves the cost of replacing broken scooper/sifter utensils. It helps limit physical discomfort in sifting litter or dumping it. This spray, when used with only the Vegetable oil, Eucalyptus oil & H2o is a “green product” made with all natural ingredients & recycled packaging. Making it safe for your pets. It also has a scent that attracts most pets to use the litter box. Best of all you'll use less plastic & help save your planet.

Abstract: A method and an apparatus for removing polymer from a substrate are provided. In one embodiment, an apparatus utilized to remove polymer from a substrate includes a processing chamber having a chamber wall and a chamber lid defining a process volume, a substrate support assembly disposed in the processing chamber, and a remote plasma source coupled to the processing chamber through an outlet port formed within the chamber wall, the outlet port having an opening pointing toward an periphery region of a substrate disposed on the substrate support assembly, wherein the remote plasma source is fabricated from a material resistant to hydrogen species.

Abstract: A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conformal deposition of a dopant-containing film which can then be heated to drive the dopants into the transistor. Some embodiments employ both conformal ion implantation and conformal deposition of dopant containing films, and in those embodiments in which the dopant containing film is a pure dopant, the ion implantation and film deposition can be performed simultaneously.

Abstract: Device-enhancing coatings are deposited on CMOS devices by successively masking with photoresist each one of the sets of N-channel and P-channel devices while unmasking or leaving unmasked the other set, and after each step of successively masking one of the sets of devices, carrying out low temperature CVD steps with a toroidal RF plasma current while applying an RF plasma bias voltage. The temperature of the workpiece is held below a threshold photoresist removal temperature. The RF bias voltage is held at a level at which the coating is deposited with a first stress when the unmasked set consists of the P-channel devices and with a second stress when the unmasked set consists of N-channel devices.

Abstract: A plasma immersion ion implantation reactor for implanting a species into a workpiece includes an enclosure which has a side wall and a ceiling defining a chamber, and a workpiece support pedestal within the chamber for supporting a workpiece having a surface layer into which the species are to be ion implanted, the workpiece support pedestal facing an interior surface of the ceiling so as to define therebetween a process region extending generally across the diameter of the wafer support pedestal. The reactor further includes an RF plasma source power generator connected across the ceiling or the sidewall and the workpiece support pedestal for capacitively coupling RF source power into the chamber. A gas distribution apparatus is provided for furnishing process gas into the chamber and a supply of process gas is provided for furnishing to the gas distribution devices a process gas containing the species.