Patents by Inventor Kenneth DeVries

Kenneth DeVries has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070115606
    Abstract: Methods and structures and methods of designing structures for charge dissipation in an integrated circuit on an SOI substrate. A first structure includes a charge dissipation ring around a periphery of the integrated circuit chip and one or more charge dissipation pedestals physically and electrically connected to the charge dissipation pedestals. The silicon layer and bulk silicon layer of the SOI substrate are connected by the guard ring and the charge dissipation pedestals. The ground distribution grid of the integrated circuit chip is connected to an uppermost wire segment of one or more charge dissipation pedestals. A second structure, replaces the charge dissipation guard ring with additional charge dissipation pedestal elements.
    Type: Application
    Filed: November 21, 2005
    Publication date: May 24, 2007
    Inventors: Kenneth DeVries, Nancy Greco, Joan Preston, Stephen Runyon
  • Publication number: 20050242439
    Abstract: A structure (and method) for an electronic chip, includes a first circuit design module having a first grid and a second circuit design module having a second grid. The first grid and the second grid are interconnected in a fabrication layer no later than a first metallization layer that accumulates a charge during a plasma process in the fabrication.
    Type: Application
    Filed: April 28, 2004
    Publication date: November 3, 2005
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Kenneth DeVries, Jeffrey Gambino, Stephen Luce, James Warnock, Francis White
  • Patent number: 5328868
    Abstract: A metal connection for an integrated circuit device is effectively "cast" in place at any level of an integrated circuit. The "mold" for the connection is formed by depositing and patterning a sacrificial material, such as aluminum oxide or other metal oxides, and covering the sacrificial material with a protective material such as silicon dioxide or other insulators. After forming bore holes to the deposit of sacrificial material through the protective layer, the sacrificial material is removed by isotropic etching to form a cavity beneath and at least partially overlaid by the protective layer. Alternatively, a defect may be produced below the protective layer and filled with metal either with or without enlargement by further removal of material. This cavity is then filled with metal by deposition of the metal by, for instance, evaporation, sputtering and chemical vapor deposition or combinations thereof.
    Type: Grant
    Filed: December 10, 1992
    Date of Patent: July 12, 1994
    Assignee: International Business Machines Corporation
    Inventors: Richard A. Conti, Kenneth DeVries, James F. White