Abstract: Disclosed are interconnect structures and methods which utilize a bonding surface comprising copper nitride. The interconnect structures include a bonding surface comprising copper nitride which is effective at preventing oxidation and/or other unwanted corrosion of the underlying conductive material while providing the basis for a high conductivity bond. The copper nitride bonding surface provides a relatively non-conductive, corrosion-resistant bonding surface while at the same time being readily transformed into a conductive layer at or just prior to the time of bonding.

Abstract: A wire cleaning system for cleaning wire configured to be wirebonded is provided. The wire cleaning system includes a chamber through which a wire configured to be wirebonded extends prior to the wire being wirebonded. The wire cleaning system also includes an energy source for removing contamination from the wire in the chamber prior to the wire being wirebonded.

Abstract: A wire bonding system for attaching a wire between bonding pads on a semiconductor device and a substrate. The wire bonding system includes a frame and a bonding head attached to the frame and adapted to attach a wire between bonding pads on a semiconductor device and a substrate. The wire bonding system also includes a laser cleaning mechanism mounted to the frame, the laser cleaning mechanism including a laser for emitting laser light adapted to irradiate contaminants on a bonding pad, the laser mechanism located on the frame so as to emit light onto a bonding pad of at least one of the semiconductor device and the substrate prior to the bonding head attaching the wire thereto.