Abstract: A thin-film thermocouple is provided which can be used at temperature of up to 900.degree. C. The thin-film thermocouple includes: a silicon substrate; an SiO.sub.2 diffusion barrier layer formed on the substrate; a titanium oxide adhesion layer formed on the diffusion barrier layer; a palladium thin film formed on the diffusion barrier layer; and a platinum thin film formed on the diffusion barrier layer and overlapping a portion of the palladium thin film to form a thermocouple junction.

Abstract: The present invention provides transparent carbon nitride films, processes or making them and compositions of matter comprising them. The films are made using a magnetron sputter gun and a ion beam. Low pressure and high velocity atoms and ions are an important part of the present invention.

Abstract: The present invention provides transparent carbon nitride films, processes or making them and compositions of matter comprising them. The films are made using a magnetron sputter gun and a ion beam. Low pressure and high velocity atoms and ions are an important part of the present invention.

Abstract: A high temperature resistant and corrosion resistant thermoelement for a thermocouple formed of a silicon base layer, a conductive thin film of a silicide of a transition metal such as titanium or molybdenum which is stable at temperatures in the range from 800.degree. C. to at least 1000.degree. C., preferably to at least about 1500.degree. C., and an oxygen diffusion limiting silica overlayer, and a method of forming such a thermoelement by depositing a conductive transition metal silicide film over a silicon base layer and heat treating the film in an oxidizing gas atmosphere having a partial pressure of oxidizing gas sufficient to oxidize silicon atoms from the transition metal silicide to form a continuous SiO.sub.2 overlayer, but insufficient to oxidize transition metal atoms from the transition metal silicide, in which silicon atoms from the transition metal silicide layer which are oxidized to form the SiO.sub.2 overlayer are replaced by silicon atoms from the silicon base layer.

Abstract: An intermetallic film thermocouple has an amorphous phase and a Seebeck coefficient above 900 .mu.V/.degree. C. Such thermocouples can be prepared by vapor-depositing an intermetallic and quenching the resulting intermetallic film.

Abstract: The invention relates to thermocouples which are formed from a junction of ruthenium oxide (RuO.sub.2) and iridium oxide (IrO.sub.2). The resulting thermocouple produces a typical electrical output of about 4.5 .mu.V/k at 40.degree. C. to about 4.1 .mu.v/K at 200.degree. C. The thermocouples are extremely resistant to corrosion and thus may be used for direct contact with corrosive environments such as halide containing acids, cyanides, chlorates or peroxides. Because the thermocouples can directly contact the environment, they are 100 to 1000 times faster than commercially available sheathed sensors.

Abstract: A method is provided for adhering a thin film metal thermocouple to a ceramic substrate used in an environment up to 700 degrees Centigrade, such as at a cylinder of an internal combustion engine. The method includes the steps of: depositing a thin layer of a reactive metal on a clean ceramic substrate; and depositing thin layers of platinum and a platinum-10% rhodium alloy forming the respective legs of the thermocouple on the reactive metal layer. The reactive metal layer serves as a bond coat between the thin noble metal thermocouple layers and the ceramic substrate. The thin layers of noble metal are in the range of 1-4 micrometers thick. Preferably, the ceramic substrate is selected from the group consisting of alumina and partially stabilized zirconia. Preferably, the thin layer of reactive metal is in the range of 0.015-0.030 micrometers (15-30 nanometers) thick. The preferred reactive metal is chromium. Other reactive metals may be titanium or zirconium.

Abstract: A transparent thin film thermocouple and a method of manufacturing comprig a positive element of indium tin oxide (ITO) and a negative element of indium oxide (In.sub.2 O.sub.3) formed on a surface by reactive sputtering with the elements being electrically joined to form a hot junction for conversion of heat into electricity.

Abstract: A method for producing quasi-crystalline films by direct vapor deposition through sputtering is provided. The method is applicable to all alloys which can be converted to quasi-crystalline structure by melt spinning.

Abstract: A method for continuously manufacturing in air aluminum matrix composites reinforced with a plurality of parallel layers of unidirectional filaments comprising positioning a plurality of filament reinforced aluminum matrix monolayer tapes in a stack, placing the stack between platens heated to a predetermined temperature, pressing the stack between the platens at pressures of approximately 100-10,000 psi to reduce its thickness to cause densification, said temperature being lower than the liquidus temperature of the aluminum matrix but being sufficiently high, in combination with the pressure, to cause bonding of said matrix to said filaments and to contiguous portions of adjacent tapes and removing the densified composite from between the platens.