Abstract: The invention is related to thermal imageable dielectric layers and thermal transfer donors and receivers comprising dielectric layers. The thermal transfer donors are useful in making electronic devices by thermal transfer of dielectric layers having excellent resistivity, good transfer properties and good adhesion to a variety of receivers.

Abstract: The invention discloses processes for thermal transfer patterning of a nanoparticle layer and a corresponding proximate portion of a carrier layer, and optionally additional transfer layers, together onto a thermal imaging receiver. The invention is useful for dry fabrication of electronic devices. Additional embodiments of the invention include multilayer thermal imaging donors comprising in layered sequence: a base film, a carrier layer and a nanoparticle layer. The carrier layer can be a dielectric or conducting layer. When the carrier layer is a dielectric layer, the base film includes a light attenuating agent in the form of a dye or pigment.

Abstract: The invention is related to thermal imageable dielectric layers and thermal transfer donors and receivers comprising dielectric layers. The thermal transfer donors are useful in making electronic devices by thermal transfer of dielectric layers having excellent resistivity, good transfer properties and good adhesion to a variety of receivers.

Abstract: The invention is related to thermal imageable dielectric layers and thermal transfer donors and receivers comprising dielectric layers. The thermal transfer donors are useful in making electronic devices by thermal transfer of dielectric layers having excellent resistivity, good transfer properties and good adhesion to a variety of receivers.

Abstract: The invention relates to thin film transistors comprising novel dielectric layers and novel electrodes comprising metal compositions that can be provided by a dry thermal transfer process.

Abstract: The invention discloses processes for thermal transfer patterning of a nanoparticle layer and a corresponding proximate portion of a carrier layer, and optionally additional transfer layers, together onto a thermal imaging receiver. The invention is useful for dry fabrication of electronic devices. Additional embodiments of the invention include multilayer thermal imaging donors comprising in layered sequence: a base film, a carrier layer and a nanoparticle layer. The carrier layer can be a dielectric or conducting layer. When the carrier layer is a dielectric layer, the base film includes a light attenuating agent in the form of a dye or pigment.

Abstract: The invention is related to thermal imageable dielectric layers and thermal transfer donors and receivers comprising dielectric layers. The thermal transfer donors are useful in making electronic devices by thermal transfer of dielectric layers having excellent resistivity, good transfer properties and good adhesion to a variety of receivers.

Abstract: Disclosed is a method negative imaging method for making a metal pattern with high conductivity comprising providing a patterned substrate comprising a patterned catalyst layer on a base substrate by a thermal imaging method followed by plating to provide the metal pattern. The metal patterns provided are suitable for electrical devices including electromagnetic interference shielding devices and touchpad sensors.

Abstract: The invention relates to thin film transistors comprising novel dielectric layers and novel electrodes comprising metal compositions that can be provided by a dry thermal transfer process.

Abstract: The invention relates to thin film transistors comprising novel dielectric layers and novel electrodes comprising metal compositions that can be provided by a dry thermal transfer process.

Abstract: Disclosed is a method negative imaging method for making a metal pattern with high conductivity comprising providing a patterned substrate comprising a patterned catalyst layer on a base substrate by a thermal imaging method followed by plating to provide the metal pattern. The metal patterns provided are suitable for electrical devices including electromagnetic interference shielding devices and touchpad sensors.

Abstract: The invention relates to thin film transistors comprising novel dielectric layers and novel electrodes comprising metal compositions that can be provided by a dry thermal transfer process.

Abstract: This invention relates to processes useful for fabricating electronic devices, more particularly to a process for laminating a layer of dielectric material onto a semiconductor.

Abstract: The Invention concerns an apparatus for and method for the simultaneous determination of permeation rate through and desorption rate from a polymeric specimen, the method comprising sealingly separating a first volume from a second volume with a specimen to be tested, said specimen being suffused with a first isotope of a gas or vapor; introducing in said first volume a second isotope of said gas or vapor, said second isotope being detectably distinguishable from said first isotope; in said second volume, adjusting the partial pressure of both said isotopes of said gas or vapor to a negligible value compared to that of said second isotope of said gas or vapor in said first volume; and, distinguishably detecting the concentration of each said diffusing isotope of said permeant in said second volume.

Abstract: A polymer composition and method for reducing the permeability of gases through molded polymeric containers and films by incorporating into the polymer from which the container or film is formed an effective amount of a barrier-enhancing additive, such as monoesters of hydroxybenzoic acid and hydroxynaphthoic acid.

Abstract: The Invention concerns an apparatus for and method for the simultaneous determination of permeation rate through and desorption rate from a polymeric specimen, the method comprising

Abstract: Transmissive attenuated embedded phase shifter photomasks comprising at least one polymeric material, preferably an amorphous fluoropolymer or an amorphous fluoropolymer doped with a fluorine functionalized organosilane, and organosilicates, or combinations thereof, the polymeric material having: (a) an index of refraction (n) in a range from 1.2 to 2.0, preferably in the range from 1.26 to 1.8, at a selected lithographic wavelength below 400 nm; and (b) an extinction coefficient (k) in a range from 0.04 to 0.8, preferably in the range from 0.06 to 0.59 at the selected lithographic wavelength below 400 nm.

Abstract: This invention relates to a rapid process for the preparation of a silica gel or a silicate polymer comprising contacting at least one fluoroalkoxysilane with a solution comprising water, optionally in the presence of a solvent and/or a catalyst. Low density gels can be prepared using this process and can possess large pore size, greater than 50 nm.

Abstract: Transmissive attenuated embedded phase shifter photomasks comprising at least one polymeric material, preferably an amorphous fluoropolymer or an amorphous fluoropolymer doped with a fluorine functionalized organosilane, and organosilicates, or combinations thereof, the polymeric material having: (a) an index of refraction (n) in a range from 1.2 to 2.0, preferably in the range from 1.26 to 1.8, at a selected lithographic wavelength below 400 nm; and (b) an extinction coefficient (k) in a range from 0.04 to 0.8, preferably in the range from 0.06 to 0.59 at the selected lithographic wavelength below 400 nm.

Abstract: This invention relates to a process for the preparation of an inorganic oxide gel comprising contacting at least one fluorinated inorganic oxide precursor with a fluorinated gelling agent in the presence of at least one fluorinated solvent to form a solution; allowing sufficient time for gelation to occur; and isolating the inorganic oxide gel. Gels made by this process are useful as coatings and as components in inorganic/organic hybrid materials.