Abstract: This invention is related to thick film conductor compositions comprising electrically conductive gold powder, one or more glass frit or ceramic oxide compositions and an organic vehicle. It is further directed to the composition's uses for LTCC (low temperature co-fired ceramic) tape, for fabrication of multilayer electronic circuits and in high frequency microelectronic applications.

Abstract: The invention relates to the use of and method of forming Low Temperature Cofired Ceramic (LTCC) circuits for high frequency applications. Furthermore, the invention relates to the novel LTCC thick film compositions and the structure itself.

Abstract: This invention is related to thick film conductor compositions comprising electrically conductive gold powder, one or more glass frit or ceramic oxide compositions and an organic vehicle. It is further directed to the composition's uses for LTCC (low temperature co-fired ceramic) tape, for fabrication of multilayer electronic circuits and in high frequency microelectronic applications.

Abstract: A glass composition consisting essentially of, based on mole percent, 46-56% B2O3, 0.5-8.5% P2O5, SiO2 and mixtures thereof, 20-50% CaO, 2-15% Ln2O3 where Ln is selected from the group consisting of rare earth elements and mixtures thereof; 0-6% M?2O where M? is selected from the group consisting of alkali elements; and 0-10% Al2O3, with the proviso that the composition is water millable.

Abstract: The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Zn-containing additive wherein the particle size of said zinc-containing additive is in the range of 7 nanometers to less than 100 nanometers; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium. The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.

Abstract: The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) zinc-containing additive; (c) glass frit wherein said glass frit is lead-free; dispersed in (d) organic medium. The present invention is further directed to an electrode formed from the composition above wherein said composition has been fired to remove the organic vehicle and sinter said glass particles. Still further, the invention is directed to a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition detailed above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.

Abstract: The present invention is directed to an electroconductive thick film composition comprising: (a) electroconductive metal particles selected from (1) Al, Cu, Au, Ag, Pd and Pt; (2) alloy of Al, Cu, Au, Ag, Pd and Pt; and (3) mixtures thereof; (3) glass frit wherein said glass frit is Pb-free; dispersed in (d) an organic medium, and wherein the average diameter of said electroconductive metal particles is in the range of 0.5-10.0 ?m. The present invention is further directed to an electrode formed from the composition as detailed above and a semiconductor device(s) (for example, a solar cell) comprising said electrode.

Abstract: The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Mn-containing additive; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium. The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.

Abstract: This invention relates to a process which produces flat, distortion-free, zero-shrink, low-temperature co-fired ceramic (LTCC) bodies, composites, modules or packages from precursor green (unfired) laminates of three or more different dielectric tape chemistries that are configured in an uniquely or pseudo-symmetrical arrangement in the z-axis of the laminate.

Abstract: This invention relates to a process which produces flat, distortion-free, zero-shrink, low-temperature co-fired ceramic (LTCC) bodies, composites, modules or packages from precursor green (unfired) laminates of three or more different dielectric tape chemistries that are configured in an uniquely or pseudo-symmetrical arrangement in the z-axis of the laminate.

Abstract: This invention relates to a process which produces flat, distortion-free, zero-shrink, low-temperature co-fired ceramic (LTCC) bodies, composites, modules or packages from precursor green (unfired) laminates of three or more different dielectric tape chemistries that are configured in an uniquely or pseudo-symmetrical arrangement in the z-axis of the laminate.

Abstract: This invention relates to a process which produces flat, distortion-free, zero-shrink, low-temperature co-fired ceramic (LTCC) bodies, composites, modules or packages from precursor green (unfired) laminates of three or more different dielectric tape chemistries that are configured in an uniquely or pseudo-symmetrical arrangement in the z-axis of the laminate.

Abstract: The present invention relates to a Cd-free and Pb-free glass composition comprising, based in mol %, 1-10% MO where M is selected from Ba, Sr, Ca and mixtures thereof, 5-30% MgO, 0.3-5% CuO, 0-2.5% P2O5, 0-2.5% ZrO2, 24-45% ZnO, 2-10% Al2O3, 35-50% SiO2 and 0.1-3% A2O where A is selected from the group of alkali elements and mixtures thereof wherein the glass composition is useful in thick paste dielectric materials which are compatible with AlN substrates.

Abstract: The present invention relates to a Cd-free and Pb-free glass composition comprising, based in mol %, 1-10% MO where M is selected from Ba, Sr, Ca and mixtures thereof, 5-30% MgO, 0.3-5% CuO, 0-2.5% P2O5, 0-2.5% ZrO2, 24-45% ZnO, 2-10% Al2O3, 35-50% SiO2 and 0.1-3% A2O where A is selected from the group of alkali elements and mixtures thereof wherein the glass composition is useful in thick paste dielectric materials which are compatible with AlN substrates.

Abstract: A method to produce a distortion-free asymmetrical low-temperature co-fired ceramic structure comprising at least one layer of glass-containing internal constraining tape and at least one layer of glass-containing primary tape wherein the internal constraining tape and the primary tape are laminated to form an asymmetrical laminate and wherein a release layer is deposited on at least one surface of the laminate forming an assembly, wherein the surface is opposite the position of greatest asymmetry of the laminated layers and wherein the assembly is thermally processed producing a structure exhibiting an interactive suppression of x,y shrinkage.