Abstract: An apparatus for removing volatile residues from a substrate is provided. In one embodiment, an apparatus for removing halogen-containing residues from a substrate includes a chamber suitable for operating maintaining a vacuum therein and a heat module positioned to heat a substrate disposed in the chamber. The apparatus for removing halogen-containing residues from a substrate also includes at least one of A) a temperature controlled pedestal having a projection extending radially therefrom suitable for supporting the temperature control pedestal on a ledge of the chamber body, the projection thermally isolating the base from the chamber body; B) a pair of substrate holders that include two support flanges extending radially inward from an inner edge of an arc-shaped body, each support flange having a substrate support step that includes a sloped landing; or C) a domed window.

Abstract: A method and apparatus for measuring a substrate temperature during a thermal process are provided. In one embodiment, an apparatus for measuring a substrate temperature during a thermal process includes an evacutable chamber, a substrate heater positioned to heat a substrate disposed in the chamber, and a sensor positioned to receive energy transmitted through the substrate while the substrate is heated by the substrate heater, wherein the sensor is configured to detect a metric indicative of transmittance. In another embodiment, a method for measuring a substrate temperature includes heating a substrate disposed in a chamber, detecting a change in transmittance of the substrate while heating, and determining a temperature of the substrate based on the change in transmittance.

Abstract: A method and system for removing volatile residues from a substrate are provided. In one embodiment, the volatile residues removal process is performed en-routed in the system while performing a halogen treatment process on the substrate. The volatile residues removal process is performed in the system other than the halogen treatment processing chamber and a FOUP. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a vacuum tight platform, processing a substrate in a processing chamber of the platform with a chemistry comprising halogen, and treating the processed substrate in the platform to release volatile residues from the treated substrate.

Abstract: An apparatus for removing volatile residues from a substrate is provided. In one embodiment, an apparatus for removing halogen-containing residues from a substrate includes a chamber suitable for operating maintaining a vacuum therein and a heat module positioned to heat a substrate disposed in the chamber. The apparatus for removing halogen-containing residues from a substrate also includes at least one of A) a temperature controlled pedestal having a projection extending radially therefrom suitable for supporting the temperature control pedestal on a ledge of the chamber body, the projection thermally isolating the base from the chamber body; B) a pair of substrate holders that include two support flanges extending radially inward from an inner edge of an arc-shaped body, each support flange having a substrate support step that includes a sloped landing; or C) a domed window.

Abstract: A method and apparatus for measuring a substrate temperature during a thermal process are provided. In one embodiment, an apparatus for measuring a substrate temperature during a thermal process includes an evacutable chamber, a substrate heater positioned to heat a substrate disposed in the chamber, and a sensor positioned to receive energy transmitted through the substrate while the substrate is heated by the substrate heater, wherein the sensor is configured to detect a metric indicative of transmittance. In another embodiment, a method for measuring a substrate temperature includes heating a substrate disposed in a chamber, detecting a change in transmittance of the substrate while heating, and determining a temperature of the substrate based on the change in transmittance.

Abstract: A method and system for removing volatile residues from a substrate are provided. In one embodiment, the volatile residues removal process is performed en-routed in the system while performing a halogen treatment process on the substrate. The volatile residues removal process is performed in the system other than the halogen treatment processing chamber and a FOUP. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a vacuum tight platform, processing a substrate in a processing chamber of the platform with a chemistry comprising halogen, and treating the processed substrate in the platform to release volatile residues from the treated substrate.

Abstract: A platen for use in chemical mechanical planarization (CMP) systems is disclosed. The platen is arranged below a linear polishing pad and designed to apply a controlled fluid flow to the underside of the linear polishing pad. The platen includes a leading zone containing a first plurality of output holes. The leading zone is oriented more proximate to an upstream region of the linear polishing pad. The platen also includes a trailing zone containing a second plurality of output holes. The trailing zone is oriented more proximate to a downstream region of the linear polishing pad. The leading zone and the trailing zone are independently controlled and designed to output the controlled fluid flow independently from each of the first plurality of output holes and the second plurality of output holes.

Abstract: A platen for use in chemical mechanical planarization (CMP) systems is disclosed. The platen is arranged below a linear polishing pad and designed to apply a controlled fluid flow to the underside of the linear polishing pad. The platen includes a leading zone containing a first plurality of output holes. The leading zone is oriented more proximate to an upstream region of the linear polishing pad. The platen also includes a trailing zone containing a second plurality of output holes. The trailing zone is oriented more proximate to a downstream region of the linear polishing pad. The leading zone and the trailing zone are independently controlled and designed to output the controlled fluid flow independently from each of the first plurality of output holes and the second plurality of output holes.

Abstract: A wafer cooling apparatus characterized by a chamber, a pedestal disposed within the chamber and a mechanism for lowering a semiconductor wafer onto an upper surface of the pedestal. The upper surface of the pedestal is grooved to allow gas trapped between the wafer and the pedestal surface to escape around the periphery of the wafer, thereby minimizing the tendency of the wafer to "skate" across the surface of the pedestal on a thin layer of gas. The method involves extending a number of pins through a grooved cooling surface of the pedestal to contact a wafer, and retracting the pins into the pedestal to lower the wafer to the cooling surface and to force gas trapped between the wafer and the pedestal into the grooves of the pedestal.