Abstract: A receiver receives a wide band signal in a range comprising a front end to the receiver including a complementary metal-oxide-semiconductor (CMOS). The CMOS includes a dipole antenna that receives a received signal; a hybrid-based broadband isolation structure that receives the received signal and a local oscillator LO signal and passes through the LO signal to a sub-harmonic mixer. The sub-harmonic mixer mixes the received signal with the local oscillator signal to generate an intermediate frequency (IF) signal to the hybrid-based broadband isolation structure.

Abstract: An accumulation-mode MOS varactor is formed with a standard CMOS process and having an anti-symmetric-CV curve. The asymmetric varactor (ASVAR) can efficiently generate even-order harmonics while simultaneously suppressing odd-order harmonics over broad bandwidths. This is achieved without degradation of dynamic cut-off frequency. The improved cut-off frequency of the asymmetric varactor results in efficient even-harmonic generation well into sub-millimeter or terahertz frequencies. This and the inherent adaptive-CV features of the asymmetric varactor result in even-harmonic generation with process variation resilience and can also be utilized for frequency response shaping and for optimizing performance at various driving conditions.

Abstract: A radio frequency (RF) front-end for a transmitter in a complementary metal-oxide-semiconductor (CMOS) includes a mixer based core that itself includes first and second input signals; an amplifier that amplifies the first signal and transmits a corresponding amplified first signal; an up-conversion mixer that receives the amplified first signal and the second signal through transistors, and mixes the amplified first signal and second signal and generates a radio frequency (RF) signal; and an antenna that receives the RF signal and transmits the signal from the front-end.

Abstract: A radio frequency (RF) front-end for a transmitter in a complementary metal-oxide-semiconductor (CMOS) includes a mixer based core that itself includes first and second input signals; an amplifier that amplifies the first signal and transmits a corresponding amplified first signal; an up-conversion mixer that receives the amplified first signal and the second signal through transistors, and mixes the amplified first signal and second signal and generates a radio frequency (RF) signal; and an antenna that receives the RF signal and transmits the signal from the front-end.

Abstract: An accumulation-mode MOS varactor is formed with a standard CMOS process and having an anti-symmetric-CV curve. The asymmetric varactor (ASVAR) can efficiently generate even-order harmonics while simultaneously suppressing odd-order harmonics over broad bandwidths. This is achieved without degradation of dynamic cut-off frequency. The improved cut-off frequency of the asymmetric varactor results in efficient even-harmonic generation well into sub-millimeter or terahertz frequencies. This and the inherent adaptive-CV features of the asymmetric varactor result in even-harmonic generation with process variation resilience and can also be utilized for frequency response shaping and for optimizing performance at various driving conditions.

Abstract: A receiver receives a wide band signal in a range comprising a front end to the receiver including a complementary metal-oxide-semiconductor (CMOS). The CMOS includes a dipole antenna that receives a received signal; a hybrid-based broadband isolation structure that receives the received signal and a local oscillator LO signal and passes through the LO signal to a sub-harmonic mixer. The sub-harmonic mixer mixes the received signal with the local oscillator signal to generate an intermediate frequency (IF) signal to the hybrid-based broadband isolation structure.

Abstract: A circuit and method for generating a signal is disclosed. The circuit includes a set of wide tuning LC tanks, a set of core transistors cross coupled to the set of wide tuning LC tanks, and a combining network coupled to the set of wide tuning LC tanks and the set of core transistors. The combining network further includes a set of inputs connected to the set of wide tuning LC tanks and the set of core transistors, a set of coupling transistors connected to the set of inputs, a set of source inductors connected to the set of coupling transistors, a coupling capacitor connected to the set of source inductors, a load resistor connected to the coupling capacitor. The combining network combines the set of inputs and the signal is delivered to the load resistor as a fourth order harmonic.

Abstract: A circuit and method for generating a signal is disclosed. The circuit includes a set of wide tuning LC tanks, a set of core transistors cross coupled to the set of wide tuning LC tanks, and a combining network coupled to the set of wide tuning LC tanks and the set of core transistors. The combining network further includes a set of inputs connected to the set of wide tuning LC tanks and the set of core transistors, a set of coupling transistors connected to the set of inputs, a set of source inductors connected to the set of coupling transistors, a coupling capacitor connected to the set of source inductors, a load resistor connected to the coupling capacitor. The combining network combines the set of inputs and the signal is delivered to the load resistor as a fourth order harmonic.

Abstract: An ultra low power radio receiver architecture based on phase locked loop is provided. Embodiments of an ultra low power radio receiver architecture based on phase locked loop can detect a complex modulated MSK signal with only a single path receiver chain. According to an embodiment of the present invention, the overall power consumption of the radio receiver in the present invention can be reduced by almost fifty percent compared to that of the conventional complex path radio receiver architecture. The radio receiver architecture of the invention is suitable for the ultra low power radio application such as wireless sensor networks (WSN).

Abstract: Embodiments of the invention provide SOI body-contacted transistors that can be used for high frequency analog and digital circuits. In accordance with certain embodiments of the invention, the SOI transistor gate can have an “I” shape, similar to the shape of the gate of a floating body SOI transistor. However, a body region is provided that extends perpendicular to the width direction of the gate and is contacted at an end of the extended body region. To form such a body contact structure, a source/drain implant block mask and silicide block mask are used during the formation of the source/drain regions. The source/drain implant block mask and silicide block mask can be formed on the same region, but the silicide block mask can allow for the body contact portion at the end of the extended body region to be silicided during the siliciding of the source/drain regions.

Abstract: An ultra low power radio receiver architecture based on phase locked loop is provided. Embodiments of an ultra low power radio receiver architecture based on phase locked loop can detect a complex modulated MSK signal with only a single path receiver chain. According to an embodiment of the present invention, the overall power consumption of the radio receiver in the present invention can be reduced by almost fifty percent compared to that of the conventional complex path radio receiver architecture. The radio receiver architecture of the invention is suitable for the ultra low power radio application such as wireless sensor networks (WSN).

Abstract: A compact integrated monopole antenna is provided, where the antenna can include a bulk semiconducting substrate, an electrically conductive antenna element disposed on said substrate, where the antenna element extending continuously along an antenna element path spanning an antenna length in a first direction. The antenna also can include a plurality of spaced apart electrically conductive grounding elements disposed on the substrate, where a first of the plurality of grounding elements is disposed on a first side of the antenna path along the antenna length and a second of the plurality of grounding elements is disposed on the other side of the antenna path along the antenna length, where the plurality of grounding elements is configured to effectively lengthen the antenna length as compared to a linear ground plane.

Abstract: An integrated circuit layout and architecture for reduced noise coupling between circuitry and on-chip antenna for wireless communications includes a monolithic semiconducting substrate having a plurality of integrated devices including a transmitter and/or a receiver. At least one on-chip balanced antenna is formed in or on the substrate. A balanced antenna feed structure electrically connects the antenna to the transmitter or receiver. At least one integrated device is substantially symmetrically disposed on the substrate relative to the on-chip antenna(s). The device(s) selected for substantially symmetrically placement are preferably those which generate the largest noise coupling.

Abstract: A multi-band low noise amplifier (LNA) 105 includes an input stage having at least two inputs, a first input (103) coupled to a first input transistor for receiving signals in a first frequency band and a second input (104) coupled to a second input transistor for receiving signals in a second frequency band. The second frequency band spaced apart from the first frequency band. A bias network (218) having a band select input is coupled to the first and second input transistor, wherein a signal level applied to the band select input turns on one of the input transistors and turns off the other input transistors. The LNA (105) operates in the first frequency band when the first input transistor is on and the second frequency band when the second input transistor is on.

Abstract: An integrated circuit layout and architecture for reduced noise coupling between circuitry and on-chip antenna for wireless communications includes a monolithic semiconducting substrate having a plurality of integrated devices including a transmitter and/or a receiver. At least one on-chip balanced antenna is formed in or on the substrate. A balanced antenna feed structure electrically connects the antenna to the transmitter or receiver. At least one integrated device is substantially symmetrically disposed on the substrate relative to the on-chip antenna(s). The device(s) selected for substantially symmetrically placement are preferably those which generate the largest noise coupling.

Abstract: The subject invention relates to a metal-semiconductor diode clamped semiconductor device and method for producing such device. A specific embodiment of the subject invention utilizes one or more Schottky barriers at, for example, the drain and/or source of at least one transistor of a field effect transistor integrated circuit. The use of one or more Schottky barriers is useful for reducing the susceptibility of latch-up for circuits having two opposite type transistors, i.e., two opposite polarity carriers, in which the two transistors are in close enough proximity to experience latch-up. This can allow the spacing between n- and p-type transistors to be reduced, thus reducing the area of the circuit. The subject invention can also allow the elimination of a metal contact by utilizing the metal layer used to form the metal-semiconductor junction in a complementary IGFET structure, to further reduce the circuit area. The subject invention is applicable to complementary metal oxide silicon (CMOS) devices.

Abstract: Emitter widths of 0.3 .mu.m on double polysilicon bipolar transistors are achieved using O.8 .mu.m photolithography and a double spacer process. The emitter width reduction is confirmed with structural and electrical measurements. The double-spacer device exhibits superior low current f.sub.T and f.sub.max.

Abstract: A process for fabricating an IGFET integrated circuit having two gate dielectric layers with different parameters is provided. Typically, the process is used for fabrication of dual voltage CMOS integrated circuits. The integrated circuit may include high voltage transistors having a first gate dielectric thickness and low voltage transistors having a second gate dielectric thickness. A first gate dielectric layer and a first gate layer for the high voltage transistors are formed over active regions of a substrate. The device is patterned to expose low voltage transistor areas, and the first gate dielectric layer and the first gate layer are removed in the low voltage transistor areas. Then, a second gate dielectric layer and a second gate layer for the low voltage transistors are formed on the device. The device is patterned to expose the high voltage transistor areas, and the second gate dielectric layer and the second gate layer are removed in the high voltage transistor areas.

Abstract: The separation constraint between the respective junctions formed between the drain regions of the complementary transistors and the semiconductor material in which they are formed is obviated by a structure which permits the respective drain regions of the opposite conductivity type transistors to have a reduced (effecting to zero) mutual separation and, at the same time, prevent the depletion regions fomed between the junctions defined by these source regions and the semiconductor material in which they are formed from spreading into contact with one another and thereby shorting the transistors together. This objective is achieved by a structure in which the source regions of the respective P and N channel transistors are formed so as to directly abut against one another and to be contiguous with a layer of buried dielectric isolation therebeneath.