Abstract: A method, system, and article provide image processing with power reduction while using universal serial bus cameras.

Abstract: Ferrous alloys and methods of forming the ferrous alloys are disclosed. A ferrous alloy material may include iron and boron and an outer case layer. The outer case layer may have an average grain size of ASTM 9 or finer and may have a case thickness of at least 0.001 inches. The boron concentration of the outer case layer may be greater than a boron concentration of a core of the material. The ferrous alloy material may also include a nitrogen scavenging agent and may have a nitrogen concentration in the outer case layer that is greater than a nitrogen concentration in the core of the material. The alloy may be formed by performing a carburizing step and a nitriding step above the upper critical temperature on a boron steel. The method may include a single heat and quench cycle.

Abstract: Ferrous alloys and methods of forming the ferrous alloys are disclosed. A ferrous alloy material may include iron and boron and an outer case layer. The outer case layer may have an average grain size of ASTM 9 or finer and may have a case thickness of at least 0.001 inches. The boron concentration of the outer case layer may be greater than a boron concentration of a core of the material. The ferrous alloy material may also include a nitrogen scavenging agent and may have a nitrogen concentration in the outer case layer that is greater than a nitrogen concentration in the core of the material. The alloy may be formed by performing a carburizing step and a nitriding step above the upper critical temperature on a boron steel. The method may include a single heat and quench cycle.

Abstract: A pinion assembly having a pinion and at least one bearing unit. The bearing unit may have a set of bearing elements and an outer race. The bearing elements may be rotatably disposed on a bearing surface of the pinion such that the bearing elements may be disposed between and may engage the bearing surface and the outer race.

Abstract: A pinion assembly having a pinion and at least one bearing unit. The bearing unit may have a set of bearing elements and an outer race. The bearing elements may be rotatably disposed on a bearing surface of the pinion such that the bearing elements may be disposed between and may engage the bearing surface and the outer race.

Abstract: A method of transactional advertising includes providing a transactional advertising platform for presenting offers to a user who is committed to complete an electronic transaction; selecting an offer to present based on at least two of the following associated with the transaction: a transaction amount, a payment type, a shipment address, and a shopping cart contents; and presenting the offer to the user based on a user level of commitment to complete the electronic transaction and based on the status of the transaction. The user level of commitment includes one of an indication of non-payment, an indication of payment, and an indication of indecision to pay. The transaction status includes one of needs incentive to transact, method of payment provided, payment approved, and payment complete.

Abstract: A system for extracting design information from a semiconductor integrated circuit (IC) is disclosed. The system includes a microscope and camera for capturing a composite image of the IC in the form of a video signal. Image capture occurs on a section-by-section basis in which a "snapshot" of each section is taken, the die-holding table stepped to a new section, and a snapshot of the new section obtained. This image capture operation continues until a composite image of the IC is obtained by successive capture of contiguous or partially overlapping images covering all of the different sections of the die. An image processor receives the video signal from the optical means and generates an abstract representation of the die in the form of lists of identifying features such as the size, type and relative location of all transistors, and the width, length and relative location of all of the metal interconnects to the IC.

Abstract: DC Saturation effects in the VF transformer of a DPT are reduced or eliminated with apparatus diverting cental office battery loop current away from windings of the transformer when a trunk circuit is seized for an off-hook condition of a calling parties telephone handset. A physically smaller transformer having increased inductance may then be employed for providing increased return loss at low frequencies. The apparatus comprises a current amplifier that is electrically connected across tip and ring lines, with a first switch means in its feedback path, and second switch means for AC coupling a transformer winding to the lines. When the trunk is idle for an on-hook condition of the handset, the amplifier is disabled and the lines are terminated with a large resistance.

Abstract: A high density CMOS dynamic RAM cell comprising a transistor and capacitance means formed in an n-well is disclosed. The capacitance means includes a polysilicon plate member disposed above a p-type region formed in the n-well. A buried contact, extending from the plate member, pierces the p-type region and contacts the well. In addition to the capacitance associated with the plate member, p-type region and well, capacitance is obtained between the side walls of the n-type regions and p-type regions.

Abstract: A high density CMOS dynamic RAM cell comprising a transistor and capacitance means formed in an n-well is disclosed. The capacitance means includes a polysilicon plate member disposed above a p-type region formed in the n-well. A buried contact, extending from the plate member, pierces the p-type region and contacts the well. In addition to the capacitance associated with the plate member, p-type region and well, capacitance is obtained between the side walls of the n-type regions and p-type regions.

Abstract: A CMOS Process for fabricating channel stops which are substantially formed as a by-product of growing a field oxide is described. A p-type region is formed at an edge (or edges) of an n-type well through an opening in a silicon nitride layer. An oxide is grown at the opening. As the oxide grows, n-type dopant from the n-type well accumulates at the edge of the oxide, forming a more highly doped n-type region. Simultaneously, an adjacent p-type region is formed under the oxide from the p-type dopant. The process also permits easy fabrication of a buried contact to the p-channel device thus eliminating the need for a metal contact when forming a bistable circuit.