Patents by Inventor Kenneth L. Hess

Kenneth L. Hess has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Technique for doping mercury cadmium telluride MOCVD grown crystalline materials using free radical transport of elemental indium and apparatus therefor
    Patent number: 5306660
    Abstract: Method and apparatus for vapor phase free methyl radical transport of indium dopant species for precise predetermined reproducible doping concentrations to control electrical properties for MOCVD grown materials.
    Type: Grant
    Filed: February 19, 1991
    Date of Patent: April 26, 1994
    Assignee: Rockwell International Corporation
    Inventors: Charles R. Younger, Shawn L. Johnston, Stuart J. C. Irvine, Edward R. Gertner, Kenneth L. Hess
  • Technique for doping MOCVD grown crystalline materials using free radical transport of the dopant species
    Patent number: 5202283
    Abstract: Method for organic free radical, including aliphatic radical, transport of dopant species for precise, predetermined, and reproducible doping concentrations to control electrical properties for chemical vapor deposition grown materials.
    Type: Grant
    Filed: February 19, 1991
    Date of Patent: April 13, 1993
    Assignee: Rockwell International Corporation
    Inventors: Charles R. Younger, Kenneth L. Hess, Stuart J. C. Irvine, Edward R. Gertner, Shawn L. Johnston
  • Semi-insulating cobalt doped indium phosphide grown by MOCVD
    Patent number: 5045496
    Abstract: A process is described for growing at least one layer doped with a transition element of cobalt on a substrate by introducing a source of indium, such as tri ethyl indium, (C.sub.2 H.sub.5).sub.3 In or, a source of a group V element, a source of the transition element, such as cobalt nitrosyl tricarbonyl CO(NO)(CO).sub.3, and a source of phosphorus, to the substrate heated in an inert or reducing atmosphere at a pressure substantially between 1/100 atmosphere and one atmosphere to grow at least one semi-insulating semiconductor layer on the substrate.
    Type: Grant
    Filed: May 13, 1988
    Date of Patent: September 3, 1991
    Assignee: Rockwell International Corporation
    Inventors: Kenneth L. Hess, Stanley W. Zehr
  • Display system and method for constructing and editing a hierarchical arrangement of information
    Patent number: 4764867
    Abstract: A user-controlled interactive computer display system and method is disclosed for manipulating a hierarchy of information (a topmost node and a number of subordinate nodes, each with only one superior node). This display system and method allows a hierarchical arrangement of information to be constructed and changed with a minimum of steps and errors because positional information about each node is handled implicitly by the system.
    Type: Grant
    Filed: June 3, 1986
    Date of Patent: August 16, 1988
    Assignee: Banner Blue Software Incorporated
    Inventor: Kenneth L. Hess