Abstract: A chemical-mechanical polishing (CMP) control system controls distribution of pressure across the backside of a semiconductor wafer being polished. The system includes a CMP apparatus having a carrier for supporting a semiconductor wafer. The carrier includes a plurality of dual function piezoelectric actuators. The actuators sense pressure variations across the semiconductor wafer and are individually controllable. A control is connected to the actuators for monitoring sensed pressure variations and controlling the actuators to provide a controlled pressure distribution across the semiconductor wafer.

Abstract: An in-situ method for regenerating a chemical-mechanical polishing pad which includes the steps of: forming the polishing pad by dispensing liquid moldable material, such as wax, polymers or water, on a polishing surface and solidifying the liquid material by reducing the temperature, allowing the moldable material to harden; distributing slurry material on the polishing pad; polishing the surface of a semiconductor wafer with a combination of the slurry material and the polishing pad; and regenerating in-situ the polishing pad. This method quickly, easily and repeatably, resurfaces and refreshes the surface on which the a semiconductor wafer is polished. The polishing pad may also include abrasives embedded therein to enhance its polishing capabilities.

Abstract: A glass 1 is irradiated with a focused pulsed laser beam 2 having a peak power density of 10.sup.5 W/cm.sup.2 or more and a repetition rate of 10 KHz or more. The glass 1 irradiated with the laser beam 2 changes its refractive index at the focal point 4. During the laser beam irradiation, the glass 1 is continuously moved with respect to the focal point of the pulsed laser beam 2 or continuously scanned with the focused laser beam 2, so as to form the refractive index changed region (i.e. an optical waveguide 5) with a predetermined pattern. The glass 1 in which the optical waveguide 5 will be formed may be any kind of glass having high transparency.

Abstract: A system for polishing a surface. The surface is positioned in contact with a rotating table having a polishing slurry or compound applied to a table surface. The pattern formed in the polishing compound as the table is rotated is monitored, and when the pattern dimensions reach a predetermined size, indicating a polished end point, the polisher ends polishing.

Abstract: A glass is irradiated with a focused pulsed laser beam having a peak power density of 10.sup.5 W/cm.sup.2 or more and a repetition rate of 10 KHz or more. The glass irradiated with the laser beam changes its refractive index at the focal point. During the laser beam irradiation, the glass is continuously moved with respect to the focal point of the pulsed laser beam or continuously scanned with the focused laser beam, so as to form the refractive index changed region (i.e. an optical waveguide) with a predetermined pattern. The glass in which the optical waveguide is formed may be any kind of glass having high transparency.