Abstract: A rotor assembly for mounting a rotor to a motor shaft having a rotor with a centrally positioned central bore, the diameter of which is slightly larger than a diameter of the motor shaft, a first stepped bore intersecting the central bore and being aligned along a first axis of the rotor, and a second stepped bore also intersecting the central bore and being aligned along a second axis of the rotor. A first cam fastener is disposed within the first stepped bore, and a second cam fastener is disposed within the second stepped bore. Upon rotating the first and second cam fasteners, they engage the motor shaft thereby securely clamping the rotor to the motor shaft.

Abstract: A rotor assembly for mounting a rotor to a motor shaft having a rotor with a centrally positioned central bore, the diameter of which is slightly larger than a diameter of the motor shaft, a first stepped bore intersecting the central bore and being aligned along a first axis of the rotor, and a second stepped bore also intersecting the central bore and being aligned along a second axis of the rotor. A first cam fastener is disposed within the first stepped bore, and a second cam fastener is disposed within the second stepped bore. Upon rotating the first and second cam fasteners, they engage the motor shaft thereby securely clamping the rotor to the motor shaft.

Abstract: A semiconductor package includes a substrate having a first surface portion in a cavity. The first surface portion includes an artificially formed grass structure. The package includes a getter film formed over the grass structure.

Abstract: A rotor assembly for mounting a rotor to a motor shaft having a rotor with a centrally positioned central bore, the diameter of which is slightly larger than a diameter of the motor shaft, a first stepped bore intersecting the central bore and being aligned along a first axis of the rotor, and a second stepped bore also intersecting the central bore and being aligned along a second axis of the rotor. A first cam fastener is disposed within the first stepped bore, and a second cam fastener is disposed within the second stepped bore. Upon rotating the first and second cam fasteners, they engage the motor shaft thereby securely clamping the rotor to the motor shaft.

Abstract: A rotor assembly for mounting a rotor to a motor shaft having a rotor with a centrally positioned central bore, the diameter of which is slightly larger than a diameter of the motor shaft, a first stepped bore intersecting the central bore and being aligned along a first axis of the rotor, and a second stepped bore also intersecting the central bore and being aligned along a second axis of the rotor. A first cam fastener is disposed within the first stepped bore, and a second cam fastener is disposed within the second stepped bore. Upon rotating the first and second cam fasteners, they engage the motor shaft thereby securely clamping the rotor to the motor shaft.

Abstract: A rotor assembly for mounting a rotor to a motor shaft having a rotor with a centrally positioned central bore, the diameter of which is slightly larger than a diameter of the motor shaft, a first stepped bore intersecting the central bore and being aligned along a first axis of the rotor, and a second stepped bore also intersecting the central bore and being aligned along a second axis of the rotor. A first cam fastener is disposed within the first stepped bore, and a second cam fastener is disposed within the second stepped bore. Upon rotating the first and second cam fasteners, they engage the motor shaft thereby securely clamping the rotor to the motor shaft.

Abstract: A method of forming a slot in a substrate comprises growing an oxide layer on a first side of a substrate, patterning and etching the oxide layer to form an opening, forming a material overlying the opening and the oxide layer, removing substrate material through a second side to a first distance from the first side, and anisotropic etching the substrate to create a substrate opening at the first side which is aligned with the opening in the oxide layer during anisotropic etching. The material overlying the opening and the oxide layer is selected so that an anisotropic etch rate of the substrate at an interface of the material and the substrate is greater than an anisotropic etch rate of the substrate at an interface of the oxide layer and the substrate.

Abstract: A semiconductor package includes a substrate having a first surface portion in a cavity. The first surface portion includes an artificially formed grass structure. The package includes a getter film formed over the grass structure.

Abstract: A method of forming a slot in a substrate comprises growing an oxide layer on a first side of a substrate, patterning and etching the oxide layer to form an opening, forming a material overlying the opening and the oxide layer, removing substrate material through a second side to a first distance from the first side, and anisotropic etching the substrate to create a substrate opening at the first side which is aligned with the opening in the oxide layer during anisotropic etching. The material overlying the opening and the oxide layer is selected so that an anisotropic etch rate of the substrate at an interface of the material and the substrate is greater than an anisotropic etch rate of the substrate at an interface of the oxide layer and the substrate.

Abstract: Tunnel-junction structures are fabricated by any of a set of related methods that form two or more tunnel junctions simultaneously. The fabrication methods disclosed are compatible with conventional CMOS fabrication practices, including both single damascene and dual damascene processes. The simultaneously formed tunnel junctions may have different areas. In some embodiments, tub-well structures are formed with sloped sidewalls. In some embodiments, an oxide-metal-oxide film stack on the sidewall of a tub-well is etched to form the tunnel junctions. Memory circuits, other integrated circuit structures, substrates carrying microelectronics, and other electronic devices made by the methods are disclosed.

Abstract: A method of manufacturing a slotted substrate includes forming a masking layer over a first surface of a substrate, and patterning and etching the masking layer to form a hole therethrough. The first layer is deposited over the masking layer and in the hole. The first layer is patterned and etched to form a plug in the hole. A second surface of the substrate that is opposite the first surface is continuously etched until a bottom surface of the plug is substantially exposed and a slot in the substrate is substantially formed.

Abstract: Tunnel-junction structures are fabricated by any of a set of related methods that form two or more tunnel junctions simultaneously. The fabrication methods disclosed are compatible with conventional CMOS fabrication practices, including both single damascene and dual damascene processes. The simultaneously formed tunnel junctions may have different areas. In some embodiments, tub-well structures are formed with sloped sidewalls. In some embodiments, an oxide-metal-oxide film stack on the sidewall of a tub-well is etched to form the tunnel junctions. Memory circuits, other integrated circuit structures, substrates carrying microelectronics, and other electronic devices made by the methods are disclosed.

Abstract: A method of manufacturing a slotted substrate includes forming a masking layer over a first surface of a substrate, and patterning and etching the masking layer to form a hole therethrough. The first layer is deposited over the masking layer and in the hole. The first layer is patterned and etched to form a plug in the hole. A second surface of the substrate that is opposite the first surface is continuously etched until a bottom surface of the plug is substantially exposed and a slot in the substrate is substantially formed.

Abstract: Described herein is a monolithic printhead formed using integrated circuit techniques. Thin film layers, including a resistive layer, are formed on a top surface of a silicon substrate. The various layers are etched to provide heater resistors and conductors. The thin film layers are also etched to expose portions of the upper surface of the substrate where ink feed holes leading into ink chambers are to be formed. A trench is etched in the bottom surface of the substrate while leaving a relatively thin membrane of the substrate underlying the thin film layers. After the trench is formed and using a backside etch, ink feed holes are formed in the substrate membrane leading from the trench to the ink chambers. Ink channels are also formed in the substrate membrane leading to sides of the ink feed holes. These channels preferably have widths smaller than the widths of the ink feed holes.