Patents by Inventor Kenneth Maxwell Hays

Kenneth Maxwell Hays has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9114891
    Abstract: A method and system of using a common set of coils to provide at least two of magnetic flux, heat and degaussing in a mobile platform are provided. In accordance with one embodiment, the method involves oscillation of current in the coils at a frequency higher than a defined pointing requirement to provide heat. In accordance with another aspect, the coil functions as a degausser by energizing the coil with an oscillating current that decreases in amplitude over time.
    Type: Grant
    Filed: December 13, 2011
    Date of Patent: August 25, 2015
    Assignee: The Boeing Company
    Inventors: Christopher Alan Day, Jeffrey Jacob Brown, Kenneth Maxwell Hays
  • Publication number: 20130148250
    Abstract: A method and system of using a common set of coils to provide at least two of magnetic flux, heat and degaussing in a mobile platform are provided. In accordance with one embodiment, the method involves oscillation of current in the coils at a frequency higher than a defined pointing requirement to provide heat. In accordance with another aspect, the coil functions as a degausser by energizing the coil with an oscillating current that decreases in amplitude over time.
    Type: Application
    Filed: December 13, 2011
    Publication date: June 13, 2013
    Applicant: THE BOEING COMPANY
    Inventors: Christopher Alan Day, Jeffrey Jacob Brown, Kenneth Maxwell Hays
  • Patent number: 6596117
    Abstract: The present invention provides a sealed-cavity miscrostructure and an associated method for manufacturing the microstructure. Specifically, the microstructure of the present invention includes first and second wafers that are positioned relative to one another so as to form a cavity between the wafers. The microstructure further includes a seal between the first and second wafers and surrounding the cavity to create a pressure seal for the cavity. This seal allows the cavity of the microstructure to be maintained at a predetermined pressure different from that of the atmosphere outside the cavity. Importantly, the microstructure of the present invention further includes a structrual bond between the first and second wafers that structurally intergrates the first and second wafers. The structural bond renders the microstructure more rugged such that the microstructure can withstand expansion, vibrational, and shock stresses experienced by the microstructure during subsequent manufacturing and use.
    Type: Grant
    Filed: April 17, 2001
    Date of Patent: July 22, 2003
    Assignee: DRS Sensors & Targeting Systems, Inc.
    Inventors: Kenneth Maxwell Hays, Alan Glenn Bisignano, Eugene Timothy Fitzgibbons
  • Publication number: 20010022207
    Abstract: A sealed cavity microstructure and an associated fabrication method are provided that incorporate both a tight pressure seal and a rugged structural bond. A rugged microstructure device incorporating a pressure-maintained cavity may thereby be fabricated. A vacuum cavity microbolometer is also provided that is fabricated using the associated method. The sealed cavity microstructure and the vacuum cavity microbolometer are thereby adapted to low-cost wafer-scale batch processing.
    Type: Application
    Filed: April 17, 2001
    Publication date: September 20, 2001
    Inventors: Kenneth Maxwell Hays, Alan Glenn Bisignano, Eugene Timothy Fitzgibbons
  • Patent number: 6277666
    Abstract: A method is provided for fabricating a MEMS structure from a silicon-on insulator (SOI) wafer that has been bonded to a support substrate, such as a glass substrate, in order to form silicon components that can be both precisely and repeatedly formed. The SOI wafer includes a handle wafer, an insulating layer disposed on the handle wafer and a silicon layer disposed on the insulating layer. At least one trench is etched through the silicon layer by reactive ion etching. By utilizing the reactive ion etching, the trenches can be precisely defined, such as to within a tolerance of 0.1 to 0.2 microns of a predetermined width. After bonding the support substrate to the silicon layer, the handle wafer is removed, such as by reactive ion etching. Thereafter, the insulating layer is selectively removed, again typically by reactive ion etching, to form the resulting MEMS structure that has a very precise and repeatable size and shape, such as to within a fraction of a micron.
    Type: Grant
    Filed: June 24, 1999
    Date of Patent: August 21, 2001
    Assignee: Honeywell Inc.
    Inventors: Kenneth Maxwell Hays, Eugene Coleman Whitcomb
  • Patent number: 6252229
    Abstract: A sealed-cavity microstructure and an associated method for manufacturing the microstructure. Specifically, the microstructure includes first and second wafers that are positioned relative to one another so as to form a cavity between the wafers. The microstructure further includes a seal between the first and second wafers and surrounding the cavity to create a pressure seal for the cavity. This seal allows the cavity of the microstructure to be maintained at a predetermined pressure different from that of the atmosphere outside the cavity. Importantly, the microstructure further includes a structural bond between the first and second wafers that structurally integrates the first and second wafers. The structural bond renders the microstructure more rugged such that the microstructure can withstand expansion, vibrational, and shock stresses experienced by the microstructure during subsequent manufacturing and use.
    Type: Grant
    Filed: July 10, 1998
    Date of Patent: June 26, 2001
    Assignee: Boeing North American, Inc.
    Inventors: Kenneth Maxwell Hays, Alan Glenn Bisignano, Eugene Timothy Fitzgibbons
  • Patent number: 5854122
    Abstract: Micromachining a microelectromechanical structure requires one or more heavily doped silicon layers. Intricately patterned structures are created in a heavily doped surface layer on a relatively undoped substrate. The substrate is subsequently dissolved in a selective etch. The doping prevents the patterned structures from dissolving. In this invention, a doped layer is grown epitaxially onto the first substrate rather than by diffusing a dopant into the substrate. This produces additional planarity, thickness control, and dopant profile control. The structure may then be placed into a larger device, such as an infrared sensor, an accelerometer, or an angular rate sensor.
    Type: Grant
    Filed: March 13, 1997
    Date of Patent: December 29, 1998
    Assignee: The Boeing Company
    Inventors: Kenneth Maxwell Hays, Bradley Leonard Halleck, Eugene Coleman Whitcomb