Patents by Inventor Kenneth McAvey

Kenneth McAvey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF FABRICATING COPPER DAMASCENE AND DUAL DAMASCENE INTERCONNECT WIRING
    Publication number: 20070059920
    Abstract: An integrated circuit and a method of manufacturing the integrated circuit, the method including: (a) providing a substrate; (b) forming a copper diffusion barrier layer on the substrate; (c) forming a dielectric layer on a top surface of the copper diffusion barrier layer; (d) forming a copper damascene or dual damascene wire in the dielectric layer, a top surface of the copper damascene or dual damascene wire coplanar with a top surface of the dielectric layer; (e) forming a first capping layer on the top surface of the wire and the top surface of the dielectric layer; (f) after step (e) performing one or more characterization procedures in relation to said integrated circuit; and (g) after step (e) forming a second capping layer on a top surface of the first capping layer.
    Type: Application
    Filed: November 1, 2006
    Publication date: March 15, 2007
    Inventors: Jeffrey Gambino, William Hill, Kenneth McAvey, Thomas McDevitt, Anthony Stamper, Arthur Winslow, Robert Zwonik
  • METHOD OF FABRICATING COPPER DAMASCENE AND DUAL DAMASCENE INTERCONNECT WIRING
    Publication number: 20060063373
    Abstract: An integrated circuit and a method of manufacturing the integrated circuit, the method including: (a) providing a substrate; (b) forming a copper diffusion barrier layer on the substrate; (c) forming a dielectric layer on a top surface of the copper diffusion barrier layer; (d) forming a copper damascene or dual damascene wire in the dielectric layer, a top surface of the copper damascene or dual damascene wire coplanar with a top surface of the dielectric layer; (e) forming a first capping layer on the top surface of the wire and the top surface of the dielectric layer; (f) after step (e) performing one or more characterization procedures in relation to said integrated circuit; and (g) after step (e) forming a second capping layer on a top surface of the first capping layer.
    Type: Application
    Filed: September 20, 2004
    Publication date: March 23, 2006
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jeffrey Gambino, William Hill, Kenneth McAvey, Thomas McDevitt, Anthony Stamper, Arthur Winslow, Robert Zwonik