Patents by Inventor Kenneth N. Wong

Kenneth N. Wong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7479687
    Abstract: Methods of forming a continuous seed layer in a high aspect via and its associated structures are described. Those methods comprise forming a recess in a substrate, forming a non-continuous metal layer within the recess, activating the non-continuous metal layer and a plurality of non-deposited regions within the recess, electrolessly depositing a seed layer on the activated non-continuous metal layer and the plurality of non-deposited regions within the recess, and electroplating a metal fill layer over the seed layer, to form a substantially void-free metal filled recess.
    Type: Grant
    Filed: November 15, 2005
    Date of Patent: January 20, 2009
    Assignee: Intel Corporation
    Inventors: Thomas S. Dory, Kenneth N. Wong