Abstract: A removable seat for a vehicle that includes a roll over protection system. The seat includes a seat bottom and a seat back assembly. The seat bottom adapted to be removably coupled to the vehicle. The seat back assembly is spaced apart from the seat bottom and adapted to be fixed by a bracket or removably coupled to first and second posts of the roll over protection system. The seat back assembly includes a seat back, a beam and saddles. The seat back is longitudinally oriented and parallel to a forward direction of vehicle travel. The beam includes a tube, a first bracket and a second bracket. The first bracket being fixed to a first end of the tube and the second bracket being fixed to a second end of the tube. The saddles fixing the tube to the seat back and includes a curved portion fixed to the tube.

Abstract: A vehicle roll over protection system with at least one hoop member, longitudinal member, and connection device. The connection device couples the longitudinal member to the hoop member and includes first and second side plates that are fixedly attached on opposing sides of the hoop member in a substantially parallel arrangement to define a channel between the first and second side plates. Each side plate includes a cut-out that forms a cradle. The longitudinal member is received in the cradle. One or more wing plates are fixed to the longitudinal member. The wing plate(s) are received in the channel between the first and second side plates such that the first and second side plates act as displacement limiting features that limit the displacement of the longitudinal member relative to the hoop member in multiple directions.

Abstract: A removable seat for a vehicle that includes a roll over protection system. The seat includes a seat bottom and a seat back assembly. The seat bottom adapted to be removably coupled to the vehicle. The seat back assembly is spaced apart from the seat bottom and adapted to be fixed by a bracket or removably coupled to first and second posts of the roll over protection system. The seat back assembly includes a seat back, a beam and saddles. The seat back is longitudinally oriented and parallel to a forward direction of vehicle travel. The beam includes a tube, a first bracket and a second bracket. The first bracket being fixed to a first end of the tube and the second bracket being fixed to a second end of the tube. The saddles fixing the tube to the seat back and includes a curved portion fixed to the tube.

Abstract: A vehicle roll over protection system with at least one hoop member, longitudinal member, and connection device. The connection device couples the longitudinal member to the hoop member and includes first and second side plates that are fixedly attached on opposing sides of the hoop member in a substantially parallel arrangement to define a channel between the first and second side plates. Each side plate includes a cut-out that forms a cradle. The longitudinal member is received in the cradle. One or more wing plates are fixed to the longitudinal member. The wing plate(s) are received in the channel between the first and second side plates such that the first and second side plates act as displacement limiting features that limit the displacement of the longitudinal member relative to the hoop member in multiple directions.

Abstract: A FET device includes a substrate having top and bottom surfaces, a channel layer on the top surface of the substrate; the channel layer having top and bottom surfaces, at least two recesses extending into the channel layer from the top surface of the channel layer and forming a channel region between the at least two recesses, a gate electrode disposed in each of the at least two recesses, and a drain region and a source region formed in the channel layer on opposite sides of said channel region.

Abstract: An apparatus comprised of a cascaded series of optical modulators addressed by a multi-bit digital word with each optical modulator in the cascaded series being responsive to a single bit in the multi-bit digital word and wherein each of the optical modulators in the cascaded series of optical modulators doubling in effective optical length as a bit index of the bit of the multi-bit digital word to which it is responsive increases by a bit index value equal to one. The apparatus may be used with a prior art analog optical modulator and an associated ADC, having a fixed bit width, to extend the number of bits beyond the fixed bit width that the ADC and analog optical modulator prior art combination can otherwise operate.

Abstract: The present invention relates to a process for fabricating integrated circuit system. More particularly, the process allows for fabrication of highly integrated system-on-a-chip modules through heterogeneous integration of different semiconductor technologies wherein alignment targets on the base semiconductor are used for precise lateral positioning of device structures above.

Abstract: In one embodiment of the present invention, an amplifier circuit is provided which includes a predistorter coupled to a power amplifier. An error detector is coupled to the signal input of the predistorter via a delay circuit and to the power amplifier output. The error detector output is coupled to a delta-sigma modulator and the output of the delta-sigma is coupled to the control input of the predistorter. The predistorter may be constructed to provide an output selected from a set of output characteristic curves, in response to a control signal at the control input. The control input of the predistorter may be a multi-bit discrete input, which may be a binary input, such as for example, a three bit binary input.

Abstract: An integrated optical transmitter includes a modulator drive circuit in communication with a modulator, and a laser drive circuit in communication with a laser. The modulator receives laser light from the laser and modulation control signals from the modulator drive circuit, and outputs modulated optical signals in a direction normal to the substrate surface. The transmitter is integrated by securing the laser to the modulator using flip chip technology. The laser includes a vertical cavity, and is optically aligned with the horizontal coupling surface of the modulator during the flip chip process.

Abstract: A method of making material layers for semiconductor devices by metal organic vapor phase epitaxy includes the steps of wafer preparation, oxide desorption, growth and post growth with an accompanying reduction of a residual sheet charge at the substrate-epitaxy interface. During the oxide desorption step, a substrate is heated to a temperature minimlly necessary to remove oxide from the substrate. In accordance with such method, material layers for a low noise high electron mobility transistor (HEMT) can be grown without a bulk, buffer layer immediately adjacent the substrate. Rather, a super lattice structure is immediately adjacent to and between the substrate and a channel layer.

Abstract: A non-inverting gallium arsenide depletion mode latch circuit is responsive to high and low input data, and to clock pulses from a clock having high and low pulses for loading data and for translating data from the input to the output in a single gate delay. The circuit includes a pair of pull-up FETs having their conduction paths connected in parallel with an output node in circuit with the FETs for output data. A positive feedback path is enabled from one of the FETs for reinforcing the data at the output node. The one FET enables the feedback path during clock pulses in the low direction, while the other FET applies data to the node during high clock pulses. Data input FETs enable and disable the other FET in accordance with the input data and selective clock pulses, while a clock pulse input FET enables and disables the one FET in accordance with the clock pulses.

Abstract: A method of adjusting the threshold voltages of field effect transistors fabricated on a III-V compound semi-insulating wafer includes the steps of measuring the threshold voltages of the transistor, directing an ion beam at the wafer to selectively damage the channels of the transistors, thereby shifting the threshold voltages to an interim value, and annealing the wafer at a temperature and for a time sufficient to stabilize the threshold voltages at a predetermined optimum value determined by the intensity and duration of the ion beam implantation. The III-V compound semi-insulating wafer may be GaAs. The ion beam may be supplied as protons accelerated to approximately 320 KeV with a concentration of between approximately 10.sup.11 and 10.sup.13 protons/cm.sup.-2. The wafer may be annealed at a temperature from approximately 100.degree. C. to approximately 300.degree. C. (for approximately one half hour at 300.degree. C.