Abstract: The growth of a phosphor layer deposited on a patterned substrate containing a multiplicity of recessed ridges of triangular cross section can be controlled by tailoring the geometry of the recessed ridge structures. During the deposition process, little or no phosphor deposition occurs on the recessed ridge structures, and cracks are formed which separate the otherwise uniformly growing phosphor which is present in other regions of the patterned substrate where more substantial phosphor deposition occurs.

Abstract: A pixelized phosphor screen having an array of pixelized phosphors on a support which are separated a width of from greater than 0.0 to 5.0 microns. In order to produce the phosphor screen, phosphor is deposited on a support and then exposed to radiation to create an array of pixelized phosphors separated by slots. The resulting slots between the pixelized phosphors are then filled in with additional phosphor material such that the width between the pixelized phosphors is from greater than 0.0 to 5.0 microns.

Abstract: A process for forming a phosphor comprising the steps of:(a) providing a substrate for deposition and growth of an alkali halide phosphor,(b) forming a patterned surface on the substrate comprising a plurality of mesas, each of the mesas having an incline, a decline, and a horizontal surface, the mesas being separated from one another by horizontal segments of the substrate and wherein:(i) the ratio of the height of each of the mesas to the width of the horizontal segments is in the range of about 1:20 to 1:4;(ii) the ratio of the width of each of the mesas to the width of the horizontal segments is in the ratio of about 1:30 to 1:4; and(iii) the angles of incline and decline of each of the mesas are between about 5.degree. to 85.degree.; and(c) depositing an alkali halide phosphor on the patterned surface of the substrate of step (b), thereby forming cracks, in the deposited phosphor, originating from the inclines and/or declines of each of the mesas.

Abstract: A process for fabricating a pixelized phosphor having a space between the pixels in the range of about 0.5-25 microns, the process comprising the steps of:(a) depositing a phosphor on a support;(b) exposing the deposited phosphor to a source of electromagnetic radiation through a mask thereby ablating the phosphor segmentally, resulting in a series of structures in both said X and Y directions to produce an array of pixelized phosphors separated by slots;(c) filling the resulting slots between the pixelized phosphors with phosphor material of the same or different composition as utilized in step (a) such that each of the pixelized phosphors on the support are separated by a width of from about 0.5-25 microns; and(d) optionally, planarizing the pixelized phosphors.

Abstract: Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

Abstract: Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

Abstract: A photoconductive assembly comprising a conductive substrate, a photoconductive layer and a topcoat comprised of a cured film-forming silicone polymer. The topcoat has a thickness of between 5 and 300 nm and a melting point above 100.degree. C.