Abstract: A clock control method and apparatus are provided employing a clock control circuit which generates an array clock for a memory array from a system clock and a reset control signal. The reset control signal is one of a plurality of input control signals to the clock control circuit. When the system clock is below a predefined frequency threshold, the reset control signal is an array tracking reset signal, wherein the active pulse width of the array clock is system clock frequency independent, and when the system clock is above the predefined frequency threshold, the reset control signal is a mid-cycle reset signal, meaning that the active pulse width of the array clock is system clock frequency dependent. A bypass signal is provided as a third input control signal, which when active causes the clock control circuit to output an array clock which mirrors the system clock.

Abstract: Write control circuitry and control method are provided for a memory array configured with multiple memory subarrays. The write control circuitry includes multiple subarray write controllers associated with the multiple memory subarrays, each subarray write controller selectively enabling a local write control signal to its associated memory subarray. The selectively enabling is responsive to a received subarray select signal, wherein only one subarray select signal is active at a time. At least some subarray write controllers are powered at least in part via a switched power node, wherein powering of the switched power node is distributively implemented among the subarray write controllers. In one example, the distributively implemented powering of the switched power node is accomplished via multiple inverters distributed among the subarray write controllers, each inverter having an output coupled to the switched power node, and an input coupled to receive a global write enable signal.

Abstract: A memory decoding apparatus includes a plurality of local subarray support circuits associated with a memory subarray, and a common bus locally configured with respect to said plurality of local subarray support circuits, the common bus configured for synchronous activation of one or more of the plurality of local subarray support circuits.

Abstract: Write control circuitry and control method are provided for a memory array configured with multiple memory subarrays. The write control circuitry includes multiple subarray write controllers associated with the multiple memory subarrays, each subarray write controller selectively enabling a local write control signal to its associated memory subarray. The selectively enabling is responsive to a received subarray select signal, wherein only one subarray select signal is active at a time. At least some subarray write controllers are powered at least in part via a switched power node, wherein powering of the switched power node is distributively implemented among the subarray write controllers. In one example, the distributively implemented powering of the switched power node is accomplished via multiple inverters distributed among the subarray write controllers, each inverter having an output coupled to the switched power node, and an input coupled to receive a global write enable signal.

Abstract: A method and apparatus for implementing ABIST data compression and serialization for memory built-in self test of SRAM with redundancy. The method includes providing detection signals asserted for one failing data out, two failing data outs, and greater than two failing data outs. The method also includes individually encoding the failing bit position of each corresponding failing data out with a binary representation value corresponding therewith. The method further includes serializing results of the providing detection signals and the individually encoding, and transmitting results of the serializing to a redundancy support register function on a single fail buss.

Abstract: A decoder circuit includes a pulse powered stage having a plurality of fan-in inputs thereto, a dynamic stage fed by the pulse powered stage, and a replica node selectively coupled to an output node of the pulse powered stage by a pass device. The pass device and the dynamic stage are controlled by a clock signal so as to enable a self-timed evaluation of the pulse-powered stage with a clocked enablement of the dynamic stage. A pull up device restores the dynamic stage to a precharged condition, the pull up device controlled by a second clock signal independent of the first clock signal.

Abstract: A decoder circuit includes a pulse powered stage having a plurality of fan-in inputs thereto, a dynamic stage fed by the pulse powered stage, and a replica node selectively coupled to an output node of the pulse powered stage by a pass device. The pass device and the dynamic stage are controlled by a clock signal so as to enable a self-timed evaluation of the pulse-powered stage with a clocked enablement of the dynamic stage.

Abstract: A bitline selection apparatus for a semiconductor memory device includes a first local bitline pair and a second local bitline pair selectively coupled to a global bitline pair, each of the first and second local bitline pairs including a true bitline and a complementary bitline. Each of the true bitlines is selectively coupled to a common true node through an n-type pass device and a p-type pass device in parallel therewith, and each of the complementary bitlines is selectively coupled to a common complementary node through an n-type pass device and a p-type pass device in parallel therewith.

Abstract: A clock control method and apparatus are provided employing a clock control circuit which generates an array clock for a memory array from a system clock and a reset control signal. The reset control signal is one of a plurality of input control signals to the clock control circuit. When the system clock is below a predefined frequency threshold, the reset control signal is an array tracking reset signal, wherein the active pulse width of the array clock is system clock frequency independent, and when the system clock is above the predefined frequency threshold, the reset control signal is a mid-cycle reset signal, meaning that the active pulse width of the array clock is system clock frequency dependent. A bypass signal is provided as a third input control signal, which when active causes the clock control circuit to output an array clock which mirrors the system clock.

Abstract: A method and structure is provided for an improved body contact layout for semiconductor-on-insulator (SOI) devices. In one embodiment, an insulated gate field effect transistor and method for fabrication of such a transistor is provided. The insulated gate field effect transistor includes a source, a drain, and a channel formed in a layer of a single-crystal semiconductor. The layer is disposed over and insulated from a bulk semiconductor layer of a substrate by a buried insulator layer. A gate conductor is disposed in an annular pattern overlying the channel, such that the gate conductor surrounds one of the source and drain disposed to the inside of the annular pattern, the other of the source and drain being disposed to the outside of the annular pattern. A second conductive pattern is connected to the annular pattern of the gate conductor. A conductive body contact is also disposed in the vicinity of the second conductive pattern.