Patents by Inventor Kenneth Schmieder

Kenneth Schmieder has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ultra-thin, flexible and radiation-tolerant eclipse photovoltaics
    Patent number: 10530294
    Abstract: Photovoltaic (PV) device comprising an ultra-thin radiation-tolerant PV absorber mounted on a flexible film having an embedded persistent phosphor and having a plurality of interdigitated top and bottom contacts on the top of the PV absorber. The PV absorber is ultra-thin, e.g., typically having a thickness of 300 nm or less for a III-V-based absorber. The phosphor absorbs some of the photons incident on the device and then discharges them for use by the device in generating electrical power during times when the device is not illuminated by the sun.
    Type: Grant
    Filed: June 2, 2017
    Date of Patent: January 7, 2020
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Louise C. Hirst, Michael K. Yakes, Cory D. Cress, Phillip Jenkins, Jeffrey H. Warner, Kenneth Schmieder, Robert J. Walters
  • Ultra-thin, Flexible and Radiation-Tolerant Eclipse Photovoltaics
    Publication number: 20170353149
    Abstract: Photovoltaic (PV) device comprising an ultra-thin radiation-tolerant PV absorber mounted on a flexible film having an embedded persistent phosphor and having a plurality of interdigitated top and bottom contacts on the top of the PV absorber. The PV absorber is ultra-thin, e.g., typically having a thickness of 300 nm or less for a III-V-based absorber. The phosphor absorbs some of the photons incident on the device and then discharges them for use by the device in generating electrical power during times when the device is not illuminated by the sun.
    Type: Application
    Filed: June 2, 2017
    Publication date: December 7, 2017
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Louise C. Hirst, Michael K. Yakes, Cory D. Cress, Phillip Jenkins, Jeffrey H. Warner, Kenneth Schmieder, Robert J. Walters
  • Tunnel Diode With Broken-Gap Quantum Well
    Publication number: 20160211393
    Abstract: A broken-gap tunnel junction device comprising a thin quantum well (QW) layer situated at the interface between adjacent highly doped n-type and p-type semiconductor layers, wherein the QW layer has a type-III broken-gap energy band alignment with respect to one or more of the surrounding semiconductor layers such that a conduction band of the QW layer is below the valence band of one or more of the n-type and p-type bulk semiconductor layers.
    Type: Application
    Filed: January 14, 2016
    Publication date: July 21, 2016
    Applicant: The Government of the United States of America, as Represented by the Secretary of the Navy
    Inventors: Matthew P. Lumb, Shawn Mack, Maria Gonzalez, Kenneth Schmieder, Robert J. Walters