Abstract: Complementary metal-oxide-semiconductor (CMOS) devices with stressed channel regions are provided. Each CMOS device comprises an field effect transistor (FET) having a channel region located in a semiconductor device structure, which has a top surface oriented along one of a first set of equivalent crystal planes and one or more additional surfaces oriented along a second, different set of equivalent crystal planes. Such additional surfaces can be readily formed by crystallographic etching. Further, one or more stressor layers with intrinsic compressive or tensile stress are located over the additional surfaces of the semiconductor device structure and are arranged and constructed to apply tensile or compressive stress to the channel region of the FET. Such stressor layers can be formed by pseudomorphic growth of a semiconductor material having a lattice constant different from the semiconductor device structure.